Details, datasheet, quote on part number: XP06215XP6215
PartXP06215XP6215
CategoryDiscrete => Transistors => Bipolar => General Purpose
Description
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload XP06215XP6215 datasheet
  

 

Features, Applications

Features

Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

Parameter Rating Collector to base voltage of Collector to emitter voltage element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg

Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance

Symbol VCBO VCEO ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCE = 0.3mA VCC = 1k VCC = 1k VCB 200MHz V MHz k min typ max Unit µA mA

Note) The Part number in the Parenthesis shows conventional part number.


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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.

Please read the following notes before using the datasheets

A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.


 

Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
XP06216 Marking = 8Y ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW
XP06216XP6216
XP06401 Marking = 5O ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP06401XP6401
XP06435 Marking = 7W ;; VCEO(V) = -20 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.03 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP06435XP6435
XP06501 Marking = 5N ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP06501XP6501
XP06534 Marking = 7F ;; VCEO(V) = 20 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.015 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP06534XP6534
XP06543 Marking = 9Y ;; VCEO(V) = 10 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.065 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP08081 Marking = 9Z ;; VCEO(V) = ;; VCEO(Tr2)(V) = 50 ;; IC(A) = ;; IC(Tr2)(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW
XP08081XP8081
XP0A554 Silicon NPN Epitaxial Planer Transistor
XP0B301 Composite Device - Composite Transistors
XP0B301 Silicon PNP Epitaxial Planer Transistor (Tr1) Silicon NPN Epitaxial Planer Transistor (Tr2)
XP0C301 Marking = 4R ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = 50 ;; IC(A) = -0.1 ;; IC(Tr2)(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW
XP0D873 Silicon N-channel Junction Fet
XP0D874 Marking = eq ;; VCEO(V) = -40 ;; VCEO(Tr2)(V) = ;; IC(A) = 1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP0E554 Silicon NPN Epitaxial Planer Transistor
XP1110 Marking = ad ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW
Same catergory

2SJ576 : Power Small Signal Switching MOSFET. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

2SK2992 : VDDS = 200 ;; Id = 1 ;; Package Type = Power Mini (SOT-89).

BAL74 : BAL74; High-speed Diode;; Package: SOT23 (SST3). Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 50 V Repetitive peak reverse voltage: max. 50 V Repetitive peak forward current: max. 500 mA. The is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. PINNING PIN 2 3 not connected anode cathode.

IPD04N03LA : Low Voltage. OptiMOS®2. Ideal for high-frequency dc/dc converters N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 °C operating temperature dv /dt rated Maximum ratings, T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions C=100 °C Pulsed drain current.

KST4123 : NPN Epitaxial Silicon Transistor. Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG RTH(j-a) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Thermal Resistance junction to Ambient Value Units mW °C °C/W Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat).

MJE4353 : Bipolar Power TO218 PNP 16A 160V, Package: SOT-93 (T0-218), Pins=3. . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 160 VOLTS NPN PNP VCEO(sus) = 160 Vdc MJE4343 MJE4353 High DC Current Gain = 8.0 Adc hFE = 35 (Typ) Low Collector­Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) = 8.0 Adc Rating Symbol VCEO.

MUN5215T1 : Bias Resistor Transistors. Small Signal Bias Resistor Transistor SC70, (SOT323) NPN 50V, Package: SC-70 (SOT-323), Pins=3.

RM100C1A-XXF : Modules/Assembly Diodes. 100A - Transistor Module For High Speed Switching Use, Insulated Type.

SDB310WA : Diode , Schottky Barrier Diode , Small Signal Type IO. Low power rectified Silicon epitaxial type High reliability Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature Forward voltage 1 Forward voltage 2 Reverse current Total capacitance Reverse recovery time .

UNRF1AN : RETs (Resistor Equipped transistors). Marking = 3K ;; VCEO(V) = -50 ;; IC(A) = -80 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = 47 ;; Package = ML3-N2.

0201YJ2R0ABSTR : CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 16 V, 0.000002 uF, SURFACE MOUNT, 0201. s: Configuration / Form Factor: Chip Capacitor ; Capacitor Type: SILICON DIOXIDE AND NITRIDE ; RoHS Compliant: Yes ; Capacitance Range: 2.00E-6 microF ; WVDC: 16 volts ; Mounting Style: Surface Mount Technology ; EIA Case Size: 0201 ; Applications: General Purpose.

08161X1TM1-F : DATACOM TRANSFORMER FOR. s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER.

CRCW06035102D50RT1 : RESISTOR, METAL GLAZE/THICK FILM, 0.063 W, 0.5 %, 50 ppm, 51000 ohm, SURFACE MOUNT, 0603. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0603, CHIP ; Resistance Range: 51000 ohms ; Tolerance: 0.5000 +/- % ; Temperature Coefficient: 50 Âħppm/°C ; Power.

HMG-25 : RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 5 %, 200; 350 ppm, 1000000 ohm - 100000000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Operating DC Voltage: 250 volts ; Operating Temperature: 70 C (158 F).

KTC9013D : 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92. s: Polarity: NPN ; Package Type: TO-92, TO-92, 3 PIN.

SMTSC3136-3N5G-RPH : 1 ELEMENT, 0.0035 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: FLAT ; Application: General Purpose ; Inductance Range: 0.0035 microH ; Operating Temperature: -40 to 125 C (-40 to 257 F).

SPD605S : 6 A, 50 V, SILICON, RECTIFIER DIODE. s: Package: HERMETIC SEALED PACKAGE-2 ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 6000 mA ; trr: 0.0400 ns.

TN2124ND : 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 240 volts ; rDS(on): 15 ohms ; Number of units in IC: 1.

2N5868.MOD : 5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA. s: Polarity: PNP ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN.

 
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