|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP06215XP6215 datasheet
Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
Parameter Rating Collector to base voltage of Collector to emitter voltage element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance
Symbol VCBO VCEO ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCE = 0.3mA VCC = 1k VCC = 1k VCB 200MHz V MHz k min typ max Unit µA mANote) The Part number in the Parenthesis shows conventional part number.
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP06216 Marking = 8Y ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP06401 Marking = 5O ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP06435 Marking = 7W ;; VCEO(V) = -20 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.03 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP06501 Marking = 5N ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP06534 Marking = 7F ;; VCEO(V) = 20 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.015 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP06543 Marking = 9Y ;; VCEO(V) = 10 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.065 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP08081 Marking = 9Z ;; VCEO(V) = ;; VCEO(Tr2)(V) = 50 ;; IC(A) = ;; IC(Tr2)(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP0A554 Silicon NPN Epitaxial Planer Transistor|
|XP0B301 Composite Device - Composite Transistors|
|XP0B301 Silicon PNP Epitaxial Planer Transistor (Tr1) Silicon NPN Epitaxial Planer Transistor (Tr2)|
|XP0C301 Marking = 4R ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = 50 ;; IC(A) = -0.1 ;; IC(Tr2)(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW|
|XP0D873 Silicon N-channel Junction Fet|
|XP0D874 Marking = eq ;; VCEO(V) = -40 ;; VCEO(Tr2)(V) = ;; IC(A) = 1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP0E554 Silicon NPN Epitaxial Planer Transistor|
|XP1110 Marking = ad ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
2SJ576 : Power Small Signal Switching MOSFET. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.
2SK2992 : VDDS = 200 ;; Id = 1 ;; Package Type = Power Mini (SOT-89).
BAL74 : BAL74; High-speed Diode;; Package: SOT23 (SST3). Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 50 V Repetitive peak reverse voltage: max. 50 V Repetitive peak forward current: max. 500 mA. The is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. PINNING PIN 2 3 not connected anode cathode.
IPD04N03LA : Low Voltage. OptiMOS®2. Ideal for high-frequency dc/dc converters N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 °C operating temperature dv /dt rated Maximum ratings, T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions C=100 °C Pulsed drain current.
KST4123 : NPN Epitaxial Silicon Transistor. Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG RTH(j-a) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Thermal Resistance junction to Ambient Value Units mW °C °C/W Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat).
MJE4353 : Bipolar Power TO218 PNP 16A 160V, Package: SOT-93 (T0-218), Pins=3. . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 160 VOLTS NPN PNP VCEO(sus) = 160 Vdc MJE4343 MJE4353 High DC Current Gain = 8.0 Adc hFE = 35 (Typ) Low CollectorEmitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) = 8.0 Adc Rating Symbol VCEO.
MUN5215T1 : Bias Resistor Transistors. Small Signal Bias Resistor Transistor SC70, (SOT323) NPN 50V, Package: SC-70 (SOT-323), Pins=3.
RM100C1A-XXF : Modules/Assembly Diodes. 100A - Transistor Module For High Speed Switching Use, Insulated Type.
SDB310WA : Diode , Schottky Barrier Diode , Small Signal Type IO. Low power rectified Silicon epitaxial type High reliability Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature Forward voltage 1 Forward voltage 2 Reverse current Total capacitance Reverse recovery time .
UNRF1AN : RETs (Resistor Equipped transistors). Marking = 3K ;; VCEO(V) = -50 ;; IC(A) = -80 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = 47 ;; Package = ML3-N2.
0201YJ2R0ABSTR : CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 16 V, 0.000002 uF, SURFACE MOUNT, 0201. s: Configuration / Form Factor: Chip Capacitor ; Capacitor Type: SILICON DIOXIDE AND NITRIDE ; RoHS Compliant: Yes ; Capacitance Range: 2.00E-6 microF ; WVDC: 16 volts ; Mounting Style: Surface Mount Technology ; EIA Case Size: 0201 ; Applications: General Purpose.
08161X1TM1-F : DATACOM TRANSFORMER FOR. s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER.
CRCW06035102D50RT1 : RESISTOR, METAL GLAZE/THICK FILM, 0.063 W, 0.5 %, 50 ppm, 51000 ohm, SURFACE MOUNT, 0603. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0603, CHIP ; Resistance Range: 51000 ohms ; Tolerance: 0.5000 +/- % ; Temperature Coefficient: 50 Âħppm/Â°C ; Power.
HMG-25 : RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 5 %, 200; 350 ppm, 1000000 ohm - 100000000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Operating DC Voltage: 250 volts ; Operating Temperature: 70 C (158 F).
KTC9013D : 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92. s: Polarity: NPN ; Package Type: TO-92, TO-92, 3 PIN.
SMTSC3136-3N5G-RPH : 1 ELEMENT, 0.0035 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: FLAT ; Application: General Purpose ; Inductance Range: 0.0035 microH ; Operating Temperature: -40 to 125 C (-40 to 257 F).
SPD605S : 6 A, 50 V, SILICON, RECTIFIER DIODE. s: Package: HERMETIC SEALED PACKAGE-2 ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 6000 mA ; trr: 0.0400 ns.
TN2124ND : 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 240 volts ; rDS(on): 15 ohms ; Number of units in IC: 1.
2N5868.MOD : 5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA. s: Polarity: PNP ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN.