|Category||Discrete => Transistors => Composite Transistors|
|Description||Marking = 7W ;; V<SUB>CEO</SUB>(V) = -20 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = 0.03 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.15 ;; R<SUB>1</SUB>(kW ) = ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SMini6-G1|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP06435 datasheet
|Cross ref.||Similar parts: VT6T11T2R, XP6435|
Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half.
Parameter Collector to base voltage Rating Collector to emitter voltage of element Emitter to base voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO PT Tj Tstg
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance
Symbol ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VBE fT NF Zrb Cre Conditions VCB = 0 VCE = 0 VEB = 0 VCB = 1mA VCB = 1mA VCE = 1mA VCB = 200MHz VCB = 5MHz VCB = 2MHz VCB 10.7MHz V MHz dB pF min typ max Unit µANote) The Part number in the Parenthesis shows conventional part number.
Common emitter reverse transfer capacitance Cre (pF)
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
|Related products with the same datasheet|
|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP06501 Marking = 5N ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP06534 Marking = 7F ;; VCEO(V) = 20 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.015 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP06543 Marking = 9Y ;; VCEO(V) = 10 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.065 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP08081 Marking = 9Z ;; VCEO(V) = ;; VCEO(Tr2)(V) = 50 ;; IC(A) = ;; IC(Tr2)(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP0A554 Silicon NPN Epitaxial Planer Transistor|
|XP0B301 Composite Device - Composite Transistors|
|XP0B301 Silicon PNP Epitaxial Planer Transistor (Tr1) Silicon NPN Epitaxial Planer Transistor (Tr2)|
|XP0C301 Marking = 4R ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = 50 ;; IC(A) = -0.1 ;; IC(Tr2)(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW|
|XP0D873 Silicon N-channel Junction Fet|
|XP0D874 Marking = eq ;; VCEO(V) = -40 ;; VCEO(Tr2)(V) = ;; IC(A) = 1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP0E554 Silicon NPN Epitaxial Planer Transistor|
|XP1110 Marking = ad ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP1111 Marking = 9S ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP1112 Marking = 7K ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP1113 Marking = 7L ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP1114 Marking = 7Q ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP1115 Marking = 7M ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
MAZ3200MA3200 : VZ(V) = 2.28 to 2.70 ;; Package = Mini3-G1
EEUFC1C102SB : Aluminum Electrolytic Capacitors/fc
ECH-U1C153JX5 : 0.015µF Film Capacitor 1206 (3216 Metric); CAP FILM 0.015UF 16VDC 1206 Specifications: Capacitance: 0.015µF ; Tolerance: ±2% ; Dielectric Material: Polyphenylene Sulphide (PPS) ; Package / Case: 1206 (3216 Metric) ; Packaging: Digi-Reel® ; Lead Spacing: - ; ESR (Equivalent Series Resistance): - ; Mounting Type: Surface Mount ; Features: General Purpose ; Lead Free Stat
ECQ-E2223JFW : 0.022µF Film Capacitor Radial; CAP FILM 0.022UF 250VDC RADIAL Specifications: Capacitance: 0.022µF ; Tolerance: ±5% ; Dielectric Material: Polyester, Metallized ; Package / Case: Radial ; Packaging: Bulk ; Lead Spacing: 0.295" (7.50mm) ; ESR (Equivalent Series Resistance): - ; Mounting Type: Through Hole ; Features: General Purpose ; Lead Free Status: Lead Fre
ELJ-NC56NKF : Fixed Inductors, Coils, Choke 56nH 200mA 1008 (2520 Metric) Non-Magnetic Core; INDUCTOR FIXED SMD .056UH 10% Specifications: Inductance: 56nH ; Tolerance: ±10% ; Package / Case: 1008 (2520 Metric) ; Packaging: Digi-Reel® ; Type: Non-Magnetic Core ; Current: 200mA ; Mounting Type: Surface Mount ; Q @ Freq: 15 @ 100MHz ; Frequency - Self Resonant: 670MHz ; DC Resistance (DCR): 630 mOhm Max ; Shielding: Unshi
ERJ-S12F1430U : 143 Ohm 0.75W, 3/4W Chip Resistor - Surface Mount; RES ANTI-SULFUR 143 OHM 1% 1812 Specifications: Resistance (Ohms): 143 ; Power (Watts): 0.75W, 3/4W ; Tolerance: ±1% ; Packaging: Tape & Reel (TR) ; Composition: Thick Film ; Temperature Coefficient: ±100ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
ERJ-S12F2872U : 28.7K Ohm 0.75W, 3/4W Chip Resistor - Surface Mount; RES ANTI-SULFUR 28.7KOHM 1% 1812 Specifications: Resistance (Ohms): 28.7K ; Power (Watts): 0.75W, 3/4W ; Tolerance: ±1% ; Packaging: Tape & Reel (TR) ; Composition: Thick Film ; Temperature Coefficient: ±100ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
UNR911BG0L : Transistor (bjt) - Single, Pre-biased Discrete Semiconductor Product 100mA 50V 125mW PNP - Pre-Biased; TRANS PNP W/RES 160HFE SSMINI Specifications: Transistor Type: PNP - Pre-Biased ; Voltage - Collector Emitter Breakdown (Max): 50V ; Current - Collector (Ic) (Max): 100mA ; Power - Max: 125mW ; Resistor - Base (R1) (Ohms): 100K ; Resistor - Emitter Base (R2) (Ohms): - ; Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA ; Curren
ASI10599 : NPN Silicon RF Power Transistor.
ASI2001 : NPN Silicon RF Power Transistor. The ASI 2001 is Designed for General Purpose Class C Power Amplifier Applications to 2300 MHz. 10 dB min. W/ 2,000 MHz Hermetic Microstrip Package OmnigoldTM Metalization System .
BZV859V1 : Silicon Planar Power Zener Diodes. Silicon Planar Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. The Zener voltage are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages upon request. DIM ENSIONS DIM inches Min. 1.102 Max. 0.110 0.031 Min. 28.0 mm Max. 2.8 0.8 Note Zener current see Table "Characteristics".
FY8ABJ-03 : P-channel Power MOSFET High-speed Switching Use: -30v, -8a. APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Symbol.
H7155Series : PMT Modules.
KTA711E : = General Purpose Transistor ;; Package = TES6.
KTC3198L : = Low Noise Transistor ;; Package = TO-92.
MRF1517N : RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large- signal, common source amplifier applications in 7.5 volt portable FM equipment. • Specified Performance @ 520 MHz,.
0833-2X8R-C3 : DATACOM TRANSFORMER FOR. s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER.
IRFH7914PBF : 15 A, 30 V, 0.0087 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0087 ohms ; Package Type: ROHS COMPLIANT, PLASTIC, QFN-8 ; Number of units in IC: 1.
RGLD10X100J : RES NET,THICK FILM,10 OHMS,100WV,5% +/-TOL,-200,200PPM TC. s: Configuration: Chip Array ; Category / Application: General Use.
SBCH46K8J : RESISTOR, WIRE WOUND, 4 W, 5 %, 200 ppm, 6800 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Resistance Range: 6800 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 200 Â±ppm/Â°C ; Power Rating: 4 watts (0.0054.
TK6A53D : 6 A, 525 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 525 volts ; rDS(on): 1.3 ohms ; Package Type: ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN ; Number of units in IC: 1.
12103G224ZAJ2A : CAPACITOR, CERAMIC, MULTILAYER, 25 V, Y5V, 0.22 uF, SURFACE MOUNT, 1210. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.2200 microF ; Capacitance Tolerance: 80 (+/- %) ; WVDC: 25 volts ; Mounting Style: Surface Mount Technology.
2SA1701-AN : 1500 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP.
308DCA2R7RT : CAPACITOR, ELECTRIC DOUBLE LAYER, 2.7 V, 3000000000 uF, STUD MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: ELECTRIC DOUBLE LAYER ; Applications: General Purpose ; RoHS Compliant: Yes ; Capacitance Range: 3.00E9 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 2.7 volts ; Mounting Style: STUD MOUNT ; Operating Temperature: -40 to 65 C (-40.