|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP06435XP6435 datasheet
Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half.
Parameter Collector to base voltage Rating Collector to emitter voltage of element Emitter to base voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO PT Tj Tstg
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance
Symbol ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VBE fT NF Zrb Cre Conditions VCB = 0 VCE = 0 VEB = 0 VCB = 1mA VCB = 1mA VCE = 1mA VCB = 200MHz VCB = 5MHz VCB = 2MHz VCB 10.7MHz V MHz dB pF min typ max Unit µANote) The Part number in the Parenthesis shows conventional part number.
Common emitter reverse transfer capacitance Cre (pF)
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP06501 Marking = 5N ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP06534 Marking = 7F ;; VCEO(V) = 20 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.015 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP06543 Marking = 9Y ;; VCEO(V) = 10 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.065 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP08081 Marking = 9Z ;; VCEO(V) = ;; VCEO(Tr2)(V) = 50 ;; IC(A) = ;; IC(Tr2)(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP0A554 Silicon NPN Epitaxial Planer Transistor|
|XP0B301 Composite Device - Composite Transistors|
|XP0B301 Silicon PNP Epitaxial Planer Transistor (Tr1) Silicon NPN Epitaxial Planer Transistor (Tr2)|
|XP0C301 Marking = 4R ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = 50 ;; IC(A) = -0.1 ;; IC(Tr2)(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW|
|XP0D873 Silicon N-channel Junction Fet|
|XP0D874 Marking = eq ;; VCEO(V) = -40 ;; VCEO(Tr2)(V) = ;; IC(A) = 1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP0E554 Silicon NPN Epitaxial Planer Transistor|
|XP1110 Marking = ad ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP1111 Marking = 9S ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP1112 Marking = 7K ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP1113 Marking = 7L ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP1114 Marking = 7Q ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP1115 Marking = 7M ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP1116 Marking = 7N ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
271XC001 : Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 104.
2N3008 : Screening Options Available = ;; Polarity = NPNP ;; Package = TO18 (TO206AA) ;; Vceo = 200V ;; IC(cont) = 0.35A ;; HFE(min) = - ;; HFE(max) = - ;; @ Vce/ic = V / 0mA ;; FT = - ;; PD = -.
CM150E3U-12H : Type = Igbt Module ;; Voltage = 600V ;; Current = 150A ;; Circuit Configuration = Chopper, Buck, Boost ;; Recommended For Designs = ;; Switching Loss Curves =.
FDS2670 : 200V N-channel PowerTrench® MOSFET. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) s. The result is a MOSFET that is easy and safer to drive (even at very.
GBPC1210 : 12/15/25 & 35 Ampere Glass Passivated Bridge Rectifiers. provided very low thermal resistance for maximum heat dissipation. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. PD RJL Power Dissipation Thermal Resistance, Junction to Lead Forward Voltage Drop, per bridge A GBPC35 Reverse Current, per leg @ rated 125°C I2t rating for fusing 25 GBPC35.
KSC2690A : NPN Epitaxial Silicon Transistor. Audio Frequency High Frequency Power Amplifier Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSC2690A VCEO Collector- Emitter Voltage : KSC2690A Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current(DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C).
MTP4N40E : Obsolete, no on Replacement Part Available, Package: TO-220, Pins=3. TM Data Sheet TMOS E-FET.TM Power Field Effect Transistor This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design.
RM60SZ-6S-6R : . Average forward current 60A Repetitive peak reverse voltage. 300V TRIPLE ARMS Non-Insulated Type Symbol VRRM VRSM VR (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage Voltage class Unit V Parameter RMS forward current Average forward current Surge (non-repetitive) forward current I2t for fusing Maximum.
SBR7035R : Schottky Rectifier, Package : DO-5.
BAV99BRVA-7 : SIGNAL DIODE. s: Diode Type: General Purpose. Fast Switching Speed Low Forward Voltage: Maximum at 1mA Fast Reverse Recovery: Maximum of 4ns Low Capacitance: Maximum of 1.5pF Ultra-Small Surface Mount Package Thermally Efficient Copper Alloy leadframe for High Power Dissipation Two "BAV99" Circuits In One Package Totally Lead-Free & Fully RoHS compliant (Notes & 2) Halogen and Antimony Free. "Green".
CS39-4BLEADFREE : 4 A, 200 V, SCR, TO-39. s: VDRM: 200 volts ; VRRM: 200 volts ; IT(RMS): 4 amps ; IGT: 0.2000 mA ; Standards and Certifications: RoHS ; Package Type: HERMETIC SEALED PACKAGE-3 ; Pin Count: 3.
FCB8100RJ : RESISTOR, WIRE WOUND, 6.5 W, 5 %, 80 ppm, 100 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Resistance Range: 100 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 80 Ā±ppm/Ā°C ; Power Rating: 6.5 watts (0.0087.
PM99-10.110200 : CAPACITOR, METALLIZED FILM, POLYESTER, 200 V, 0.1 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polyester ; Capacitance Range: 0.1000 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 200 volts ; Mounting Style: Through Hole ; Operating.
RV202YP15FB101 : RESISTOR, POTENTIOMETER, CARBON FILM, 1 TURN(S), 0.25 W, 100 ohm. s: Potentiometer Type: Standard Potentiometer ; Resistance Taper: Linear ; Mounting / Packaging: ThroughHole, ROHS COMPLIANT ; Resistance Range: 100 ohms ; Tolerance: 10 +/- % ; Operating Temperature: -10 to 85 C (14 to 185 F) ; Standards and Certifications: RoHS.
SR241K53D : RESISTOR, VOLTAGE DEPENDENT, 200 V, 570 J, CHASSIS MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Bolt-on Chassis ; Operating DC Voltage: 200 volts.
STB60N55F3TRL : 80 A, 55 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 55 volts ; rDS(on): 0.0085 ohms ; Package Type: ROHS COMPLIANT, D2PAK-3 ; Number of units in IC: 1.
TG10 : 1 A, 1000 V, SILICON, SIGNAL DIODE. s: Diode Type: General Purpose ; IF: 1000 mA ; trr: 0.1000 ns.
1BG0920 : 880 MHz - 960 MHz RF TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: RF ; Mounting: Chip Transformer.
2501MNV2060FKN0550 : CAP,AL2O3,500UF,330VDC,10% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic.
7499161005A : DATACOM TRANSFORMER FOR. s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER.