Details, datasheet, quote on part number: XP06435XP6435
PartXP06435XP6435
CategoryDiscrete => Transistors => Bipolar => General Purpose
Description
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload XP06435XP6435 datasheet
  

 

Features, Applications

Features

Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half.

Parameter Collector to base voltage Rating Collector to emitter voltage of element Emitter to base voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO PT Tj Tstg

Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance

Symbol ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VBE fT NF Zrb Cre Conditions VCB = 0 VCE = 0 VEB = 0 VCB = 1mA VCB = ­1mA VCE = ­1mA VCB = 200MHz VCB = 5MHz VCB = 2MHz VCB 10.7MHz V MHz dB pF min typ max Unit µA

Note) The Part number in the Parenthesis shows conventional part number.

Common emitter reverse transfer capacitance Cre (pF)


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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.

Please read the following notes before using the datasheets

A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.


 

Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
XP06501 Marking = 5N ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP06501XP6501
XP06534 Marking = 7F ;; VCEO(V) = 20 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.015 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP06534XP6534
XP06543 Marking = 9Y ;; VCEO(V) = 10 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.065 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP08081 Marking = 9Z ;; VCEO(V) = ;; VCEO(Tr2)(V) = 50 ;; IC(A) = ;; IC(Tr2)(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW
XP08081XP8081
XP0A554 Silicon NPN Epitaxial Planer Transistor
XP0B301 Composite Device - Composite Transistors
XP0B301 Silicon PNP Epitaxial Planer Transistor (Tr1) Silicon NPN Epitaxial Planer Transistor (Tr2)
XP0C301 Marking = 4R ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = 50 ;; IC(A) = -0.1 ;; IC(Tr2)(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW
XP0D873 Silicon N-channel Junction Fet
XP0D874 Marking = eq ;; VCEO(V) = -40 ;; VCEO(Tr2)(V) = ;; IC(A) = 1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP0E554 Silicon NPN Epitaxial Planer Transistor
XP1110 Marking = ad ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW
XP1111 Marking = 9S ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW
XP1112 Marking = 7K ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW
XP1113 Marking = 7L ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW
XP1114 Marking = 7Q ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW
XP1115 Marking = 7M ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW
XP1116 Marking = 7N ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW
Same catergory

271XC001 : Vceomin. Volts = 60 ;; Hfemin. = 20 ;; Hfemax. = - ;; @ ic Amps = 1.00 ;; Page No. = 104.

2N3008 : Screening Options Available = ;; Polarity = NPNP ;; Package = TO18 (TO206AA) ;; Vceo = 200V ;; IC(cont) = 0.35A ;; HFE(min) = - ;; HFE(max) = - ;; @ Vce/ic = V / 0mA ;; FT = - ;; PD = -.

CM150E3U-12H : Type = Igbt Module ;; Voltage = 600V ;; Current = 150A ;; Circuit Configuration = Chopper, Buck, Boost ;; Recommended For Designs =   ;; Switching Loss Curves =.

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KSC2690A : NPN Epitaxial Silicon Transistor. Audio Frequency High Frequency Power Amplifier Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSC2690A VCEO Collector- Emitter Voltage : KSC2690A Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current(DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C).

MTP4N40E : Obsolete, no on Replacement Part Available, Package: TO-220, Pins=3. TM Data Sheet TMOS E-FET.TM Power Field Effect Transistor This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage­blocking capability without degrading performance over time. In addition, this advanced TMOS E­FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design.

RM60SZ-6S-6R : . Average forward current 60A Repetitive peak reverse voltage. 300V TRIPLE ARMS Non-Insulated Type Symbol VRRM VRSM VR (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage Voltage class Unit V Parameter RMS forward current Average forward current Surge (non-repetitive) forward current I2t for fusing Maximum.

SBR7035R : Schottky Rectifier, Package : DO-5.

BAV99BRVA-7 : SIGNAL DIODE. s: Diode Type: General Purpose. Fast Switching Speed Low Forward Voltage: Maximum at 1mA Fast Reverse Recovery: Maximum of 4ns Low Capacitance: Maximum of 1.5pF Ultra-Small Surface Mount Package Thermally Efficient Copper Alloy leadframe for High Power Dissipation Two "BAV99" Circuits In One Package Totally Lead-Free & Fully RoHS compliant (Notes & 2) Halogen and Antimony Free. "Green".

CS39-4BLEADFREE : 4 A, 200 V, SCR, TO-39. s: VDRM: 200 volts ; VRRM: 200 volts ; IT(RMS): 4 amps ; IGT: 0.2000 mA ; Standards and Certifications: RoHS ; Package Type: HERMETIC SEALED PACKAGE-3 ; Pin Count: 3.

FCB8100RJ : RESISTOR, WIRE WOUND, 6.5 W, 5 %, 80 ppm, 100 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Resistance Range: 100 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 80 Ā±ppm/Ā°C ; Power Rating: 6.5 watts (0.0087.

PM99-10.110200 : CAPACITOR, METALLIZED FILM, POLYESTER, 200 V, 0.1 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polyester ; Capacitance Range: 0.1000 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 200 volts ; Mounting Style: Through Hole ; Operating.

RV202YP15FB101 : RESISTOR, POTENTIOMETER, CARBON FILM, 1 TURN(S), 0.25 W, 100 ohm. s: Potentiometer Type: Standard Potentiometer ; Resistance Taper: Linear ; Mounting / Packaging: ThroughHole, ROHS COMPLIANT ; Resistance Range: 100 ohms ; Tolerance: 10 +/- % ; Operating Temperature: -10 to 85 C (14 to 185 F) ; Standards and Certifications: RoHS.

SR241K53D : RESISTOR, VOLTAGE DEPENDENT, 200 V, 570 J, CHASSIS MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Bolt-on Chassis ; Operating DC Voltage: 200 volts.

STB60N55F3TRL : 80 A, 55 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 55 volts ; rDS(on): 0.0085 ohms ; Package Type: ROHS COMPLIANT, D2PAK-3 ; Number of units in IC: 1.

TG10 : 1 A, 1000 V, SILICON, SIGNAL DIODE. s: Diode Type: General Purpose ; IF: 1000 mA ; trr: 0.1000 ns.

1BG0920 : 880 MHz - 960 MHz RF TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: RF ; Mounting: Chip Transformer.

2501MNV2060FKN0550 : CAP,AL2O3,500UF,330VDC,10% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic.

7499161005A : DATACOM TRANSFORMER FOR. s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER.

 
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