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Details, datasheet, quote on part number:XP1401
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| Part: | XP1401 |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = 5V ;; V<SUB>CEO</SUB>(V) = -50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = -0.1 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.15 ;; R<SUB>1</SUB>(kW ) = ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SMini5-G1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download XP1401 datasheet File size : 415 kB |
| Request For quote: | Find where to buy XP1401
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Datasheet text preview:
Composite Transistors
XP01401 (XP1401)
Silicon PNP epitaxial planer transistor
Unit: mm
For general amplification
( 0 .4 2 5 )
0.20±0.05 5 4
0 05 0.12+0..02
1.25±0.10 2.1±0.1
G
G
Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half.
10°
1
2
3
(0.65) (0.65) 1.3±0.1 2.0±0.1
G
I Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO V CEO V EBO IC ICP PT Tj T stg
(Ta=25°C)
Ratings 60 50 7 100 200 150 150 55 to +150 Unit V V V mA mA mW °C °C
1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2)
4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC88A SMini5-G1 Package
Marking Symbol: 5V Internal Connection
1 2 3 4 Tr1 5
Tr2
I Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
*1
(Ta=25°C)
Symbol VCBO VCEO V EBO ICBO ICEO hFE hFE (small/large)*1 VCE(sat) fT C ob Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCB = 20V, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IC = 2mA VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = 1mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 160 0.5 0.99 0.3 80 2.7 0.5 V MHz pF min 60 50 7 0.1 100 460 typ max Unit V V V µA µA
Ratio between 2 elements
Note) The Part number in the Parenthesis shows conventional part number.
0 to 0.1
02 0.9+0..1
2SB0709A(2SB709A) × 2 elements
0.9±0.1
I Basic Part Number of Element
5°
0.2±0.1
I
Features
1
Composite Transistors
PT -- Ta
250
XP01401
IC -- VCE
60 Ta=25°C IB= 300µA 250µA 40 200µA 30 150µA 60 VCE= 5V Ta=25°C 50
IC -- I B
Total power dissipation PT (mW)
Collector current IC (mA)
Collector current IC (mA)
200
50
40
150
30
100
20
100µA
20
50
10
50µA
10
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12 14 16 18
0 0 100 200 300 400
Ambient temperature Ta (°C)
Collector to emitter voltage VCE (V)
Base current IB (µA)
IB -- VBE
400 350 VCE= 5V Ta=25°C 200 240
IC -- VBE
10
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
VCE= 5V
IC/IB=10
25°C Ta=75°C 25°C
3 1 0.3 0.1 0.03 0.01 25°C Ta=75°C
Base current IB (µA)
300 250 200 150 100 50 0 0 0.4 0.8 1.2 1.6
Collector current IC (mA)
160
25°C
120
80
40
0.003 0.001 1
0 0 0.4 0.8 1.2 1.6 2.0
3
10
30
100 300 1000
Base to emitter voltage VBE (V)
Base to emitter voltage VBE (V)
Collector current IC (mA)
hFE -- IC
600 VCE= 10V 160 VCB=10V Ta=25°C
fT -- I E
8
Cob -- VCB
Collector output capacitance Cob (pF)
f=1MHz IE=0 Ta=25°C
Forward current transfer ratio hFE
500
Transition frequency fT (MHz)
140 120 100 80 60 40 20
7 6 5 4 3 2 1 0 1
400 Ta=75°C 300 25°C 25°C 200
100
0 1
3
10
30
100 300 1000
0 0.1
0.3
1
3
10
30
100
2 3 5
10
20 30 50 100
Collector current IC (mA)
Emitter current IE (mA)
Collector to base voltage VCB (V)
2
Composite Transistors
NF -- IE
6 VCB=5V f=1kHz Rg=2k Ta=25°C
20 18 16 VCB=5V Rg=50k Ta=25°C
XP01401
NF -- IE
300 200 hfe 100
h Parameter -- IE
5
Noise figure NF (dB)
Noise figure NF (dB)
12 10 8 6 4 2
Parameter h
4
14
50 30 20 10 5 3 2 1 0.1 hre (×104) 0.2 0.3 0.5 1 2 3 VCE=5V f=270Hz Ta=25°C 5 10 hoe (µS)
f=100Hz
3
1kHz 10kHz
2
hie (k)
1
0 0.01 0.03
0.1
0.3
1
3
10
0 0.1
0.2 0.3 0.5
1
2
3
5
10
Emitter current IE (mA)
Emitter current IE (mA)
Emitter current IE (mA)
h Parameter -- VCE
300 200 hfe 100 IE=2mA f=270Hz Ta=25°C
Parameter h
50 30 20 hoe (µS) 10 5 3 2 1 1 hre (×104) hie (k)
2 3 5
10
20 30 50 100
Collector to emitter voltage VCE (V)
3
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