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Details, datasheet, quote on part number:XP1501
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| Part: | XP1501 |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = 5R ;; V<SUB>CEO</SUB>(V) = 50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = 0.1 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.15 ;; R<SUB>1</SUB>(kW ) = ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SMini5-F1SMini5-G1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download XP1501 datasheet File size : 86 kB |
| Request For quote: | Find where to buy XP1501
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Datasheet text preview:
Composite Transistors
XP01501 (XP1501)
Silicon NPN epitaxial planar type
(0.425)
Unit: mm
0 05 0.12+0..02
For general amplification Features
· Two elements incorporated into one package (Emitter-coupled transistors) · Reduction of the mounting area and assembly cost by one half
0.20±0.05 5 4
1.25±0.10 2.1±0.1
1
2
3
(0.65) (0.65) 1.3±0.1 2.0±0.1 10°
Basic Part Number
· 2SD0601A (2SD601A) × 2
0.9±0.1
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature
V CBO V CEO V EBO IC ICP PT Tj Tstg
60 50 7 100 200 150 150 -55 to +150
V V V mA mA mW °C °C
1: Base (Tr1) 2: Emitter 3: Base (Tr2) EIAJ: SC-88A
0 to 0.1
Parameter
Symbol
Rating
Unit
02 0.9+0..1
Absolute Maximum Ratings Ta = 25°C
4: Collector (Tr2) 5: Collector (Tr1) SMini5-G1 Package
Marking Symbol: 5R Internal Connection
5 4
Tr1
5°
Tr2
1
2
3
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio hFE ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol V CBO V CEO V EBO ICBO ICEO h FE h FE(Small/
Large)
Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA VCE = 10 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCB = 10 V, IE = -2 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
Min 60 50 7
Typ
Max
0.1 100 160 0.50 0.99 0.1 150 3.5 0.3 460
V CE(sat) fT Co b
MHz pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2003 SJJ00146BED
0.2±0.1
Unit V V V µA µA V
1
XP01501
PT Ta
250 60
IC VCE
Ta = 25°C IB = 160 µA 240 VCE = 10 V Ta = 25°C 200
IC I B
Total power dissipation PT (mW)
50
Collector current IC (mA)
Collector current IC (mA)
200
140 µA 40 120 µA 100 µA 30 80 µA 20 60 µA 40 µA 10 20 µA
160
150
120
100
80
50
40
0
0 0 40 80 120 160
0 0 2 4 6 8 10
0
0.2
0.4
0.6
0.8
1.0
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base current IB (mA)
I B VB E
1.2 VCE = 10 V Ta = 25°C 1.0
240
IC VBE
VCE = 10 V
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
102 IC / IB = 10
200
Collector current IC (mA)
Base current IB (mA)
10
0.8
160 25°C Ta = 75°C -25°C
0.6
120
1
0.4
80
10-1
25°C -25°C
Ta = 75°C
0.2
40
0
0
0.2
0.4
0.6
0.8
1.0
0
10-2
0
0.4
0.8
1.2
1.6
2.0
10-1
1
10
102
Base-emitter voltage VBE (V)
Base-emitter voltage VBE (V)
Collector current IC (mA)
hFE IC
600 VCE = 10 V
fT I E
300 VCB = 10 V Ta = 25°C
240
NV IC
VCE = 10 V GV = 80 dB 200 Function = FLAT Ta = 25°C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
500
240
400
Ta = 75°C 25°C
Noise voltage NV (mV)
160 Rg = 100 k
180
300
-25°C
120
120
200
80
22 k 4.7 k
100
60
40
0 10-1
1
10
102
0 -10-1
1
10
102
0 10
102
103
Collector current IC (mA)
Emitter current IE (mA)
Collector current IC (µA)
2
SJJ00146BED
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