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Details, datasheet, quote on part number:P4C168-25DMB
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| Part: | P4C168-25DMB |
| Category: | Memory => SRAM => SRAM |
| Description: | Org = 4K X 4 ;; Features. = Common I/o ;; ;; Taa (ns) = 12 to 25 ;; Package / Pins Dip = 20 ;; Package / Pins Soj = 20 ;; Package / Pins Soic / Sop = 20 |
| Company: | Performance Semiconductor Corp. |
| Datasheet: | Download P4C168-25DMB datasheet File size : 77 kB |
| Request For quote: | Find where to buy P4C168-25DMB
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Datasheet text preview:
P4C168, P4C169, P4C170
P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS
FEATURES
Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) 12/15/20/25ns (Commercial) 20/25/35ns (P4C168 Military) Low Power Operation (Commercial) 715 mW Active 193 mW Standby (TTL Input) P4C168 83 mW Standby (CMOS Input) P4C168 Single 5V±10% Power Supply Fully TTL Compatible, Common I/O Ports Three Options P4C168 Low Power Standby Mode P4C169 Fast Chip Select Control P4C170 Fast Chip Select, Output Enable Controls Standard Pinout (JEDEC Approved) P4C168: 20-pin DIP, SOJ and SOIC P4C169: 20-pin DIP and SOIC P4C170: 22-pin DIP
DESCRIPTION
The P4C168, P4C169 and P4C170 are a family of 16,384bit ultra high-speed static RAMs organized as 4K x 4. All three devices have common input/output ports.The P4C168 enters the standby mode when the chip enable (CE) control goes high; with CMOS input levels, power consumption is only 83mW in this mode. Both the P4C169 and the P4C170 offer a fast chip select access time that is only 67% of the address access time. In addition, the P4C170 includes an output enable (OE) control to eliminate data bus contention. The RAMs operate from a single 5V ± 10% tolerance power supply. Access times as fast as 12 nanoseconds are available, permitting greatly enhanced system operating speeds. CMOS is used to reduce power consumption to a low 715 mW active, 193 mW standby. The P4C168 and P4C169 are available in 20-pin (P4C170 in 22-pin) 300 mil DIP packages providing excellent board level densities. The P4C168 is also available in 20-pin 300 mil SOIC and SOJ packages. The P4C169 is also available in a 20-pin 300 mil SOIC package. The P4C170 is also available in a 22-pin 300 mil SOJ package.
FUNCTIONAL BLOCK DIAGRAM
A ROW SELECT A 16,384-BIT MEMORY ARRAY
PIN CONFIGURATIONS
(7)
A0 A1 A2
INPUT DATA CONTROL
1 2 3 4 5 6 7 8 9 10
20 19 18 17 16 15 14 13 12 11
V CC A 11 A 10 A9 A8 I/O4 I/O3 I/O2 I/O1 WE
A0 A1 A2 A3 A4 A5 A6 A7 CS OE GND
1 2 3 4 5 6 7 8 9 10 11
22 21 20 19 18 17 16 15 14 13 12
V CC A 11 A 10 A9 A8 NC I/O4 I/O3 I/O2 I/O1 WE
I/O 1 I/O 2 I/O 3 I/O 4 COLUMN I/O
A3 A4 A5 A6 A7 CE , CS GND
POWER DOWN
COLUMN SELECT
CE or CS WE OE
NOTES: CE USED ON P4C168 ALSO FOR POWER DOWN FUNCTIONS CE USED ON P4C169 FAST CHIP SELECT OE OUTPUT ENABLE FUNCTION ON P4C170 ONLY
P4C168 ONLY
A (5)
A
P4C168 P4C169 DIP (P2, D2) DIP (P2) SOIC (S2) SOIC (S2) SOJ (J2) TOP VIEW
P4C170 DIP (P3) TOP VIEW
Means Quality, Service and Speed
1Q97
33
P4C168, P4C169, P4C170
MAXIMUM RATINGS(1)
Symbol VCC Parameter Power Supply Pin with Respect to GND Terminal Voltage with Respect to GND (up to 7.0V) Operating Temperature Value 0.5 to +7 0.5 to VCC +0.5 55 to +125 Unit V Symbol TBIAS TSTG V °C PT IOUT Parameter Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Value 55 to +125 65 to +150 1.0 50 Unit °C °C W mA
VTERM TA
RECOMMENDED OPERATING CONDITIONS
Grade(2) Commercial Military Ambient Temp 0°C to 70°C 55°C to +125°C Gnd 0V 0V VCC 5.0V ± 10% 5.0V ± 10%
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0MHz) Symbol CIN COUT Parameter Input Capacitance Conditions Typ. Unit VIN = 0V 5 7 pF pF
Output Capacitance VOUT= 0V
DC ELECTRICAL CHARACTERISTICS
P4C168/169/170 Symbol VIH VIL VHC VLC VCD VOL VOLC VOH VOHC ILI ILO ICC ISB Parameter Input High Voltage Input Low Voltage CMOS Input High Voltage CMOS Input Low Voltage Input Clamp Diode Voltage Output Low Voltage (TTL Load) Output Low Voltage (CMOS Load) Output High Voltage (TTL Load) Output High Voltage (CMOS Load) Input Leakage Current Output Leakage Current Dynamic Operating Current Standby Power Supply Current (TTL Input Levels) P4C168 only Standby Power Supply Current (CMOS Input Levels) P4C168 only VCC = Min., IIN = 18 mA IOL = +8 mA, VCC = Min. IOLC = +100 µA, VCC = Min. IOH = 4 mA, VCC = Min. IOHC = 100 µA, VCC = Min. VCC = Max., VIN = GND to VCC VCC = Max., CS = VIH, VOUT = GND to VCC Mil. Comm'l Mil. Comm'l 2.4 VCC 0.2 10 5 10 5
___ ___
Test Conditions
Min 2.2 0.5(3) VCC 0.2 0.5(3)
Max VCC +0.5 0.8 VCC +0.5 0.2 1.2 0.4 0.2
Unit V V V V V V V V V
+10 +5 +10 +5 130 35
µA µA mA mA
VCC = Max., f = Max., Outputs Open CE VIH, VCC = Max., f = Max., Outputs Open CE VHC, VCC = Max., f = 0, Outputs Open VIN VLC or VIN VHC
ISB1
___
15
mA
34
P4C168, P4C169, P4C170
AC CHARACTERISTICS--READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym. t RC t AA tAC§ tAC t OH tLZ tHZ tOE t
OLZ
Parameter Read Cycle Time Address Access Time Chip Enable Access Time Chip Select Access Time Output Hold from Address Change Chip Enable to Output in Low Z Chip Disable to Output in High Z Output Enable to Data Valid Output Enable to Output in Low Z Output Disable to Output in High Z Read Command Setup Time Read Command Hold Time Chip Enable to Power Up Time Chip Disable to Power Down Time 0 0 0 0 2 2
12 12 12 12 8 2 2 6 8 0 6 0 0 0 12
15 15 15 15 9 2 2 7 10 0 7 0 0 0 15
20 20 20 20 12 2 2 9 12 0 9 0 0 0 20
25
35
Unit ns
Min Max Min Max Min Max Min Max Min Max 25 25 25 15 2 2 10 15 0 11 0 0 0 25 35 15 15 15 35 35 35 20 ns ns ns ns ns ns ns ns ns ns ns ns ns
tOHZ t RCS tRCH t
§ PU
tPD§
§ P4C168 only P4C170 only Chip Select/Deselect for P4C169 and P4C170
TIMING WAVEFORM OF READ CYCLE NO. 1 (ADDRESS CONTROLLED)(5,6)
(9)
t RC ADDRESS t AA t OH DATA OUT PREVIOUS DATA VALID
DATA VALID
Notes: 5. WE is HIGH for READ cycle. 6. CE/CS and OE are LOW for READ cycle.
35
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