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Details, datasheet, quote on part number:P4C1681-25JC
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| Part: | P4C1681-25JC |
| Category: | Memory => SRAM => SRAM |
| Description: | Org = 4K X 4 ;; Features. = Separate I/O, Transparent Write ;; ;; Taa (ns) = 12 to 25 ;; Package / Pins Dip = 24 ;; Package / Pins Soj = 24 ;; Package / Pins Soic / Sop = 24 |
| Company: | Performance Semiconductor Corp. |
| Datasheet: | Download P4C1681-25JC datasheet File size : 61 kB |
| Request For quote: | Find where to buy P4C1681-25JC
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Datasheet text preview:
P4C1681, P4C1682
P4C1681, P4C1682 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS
FEATURES
Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) 12/15/20/25 ns (Commercial) 20/25/35ns (P4C1682 Military) Low Power Operation (Commercial) 715 mW Active 12, 15 550 mW Active 20/25/35 193 mW Standby (TTL Input) 83 mW Standby (CMOS Input) Single 5V ± 10%Power Supply Separate Inputs and Outputs P4C1681 Input Data at Outputs during Write P4C1682 Outputs in High Z during Write Fully TTL Compatible Inputs and Outputs Standard Pinout (JEDEC Approved) 24-Pin 300 mil DIP 24-Pin 300 mil SOIC 24-Pin 300 mil SOJ 24-Pin CERDIP 28-Pin LCC (450 mil x 450 mil)
DESCRIPTION
The P4C1681 and P4C1682 are 16,384-bit (4K x 4) ultra high speed static RAMs similar to the P4C168, but with separate data I/O pins. The P4C1681 features a transparent write operation; the outputs of the P4C1682 are in high impedance during the write cycle. All devices have low power standby modes. The RAMs operate from a single 5V ± 10% tolerance power supply. Access times as fast as 12 nanoseconds are available, permitting greatly enhanced system operating speeds. CMOS is used to reduce power consumption to a low 715 mW active, 193 mW standby. For the P4C1682 and P4C1681, power is only 83 mW standby with CMOS input . levels. The P4C1681 and P4C1682 are available in 24-pin 300 mil DIP and SOIC packages providing excellent board level densities. The P4C1682 is also available in a 28-pin LCC package.
FUNCTIONAL BLOCK DIAGRAM
A (7) A I1 I2 I3 I4 O1 O2
COLUMN I/O ROW SELECT 16,384-BIT MEMORY ARRAY
PIN CONFIGURATIONS
A0 A1 A2 A3 A4 A5 A6 A7
1 2 3 4 5 6 7 8 9 10 11 12
24 23 22 21 20 19 18 17 16 15 14 13
VCC
A0 VCC A3 A2 A1
A11 A10 A9 A8 I4 I3 O4 O3 O2 O1 WE
A4 A5 NC NC A6 A7 I1
12 4 5 6 7 8 9
3
2 1
28 27
A 10
26 25 24 23 22 21 20 19
A11
A9 A8 I4 NC NC I3 O4
INPUT DATA CONTROL
O3 O4
10 11 13 14 15 16 17
POWER DOWN CE WE P4C1682 P4C1681
COLUMN SELECT
I1 I2 CE GND
18
I2 CE GND WE O1
A
(5)
A
DIP (P4,D4), SOIC (S4), SOJ (J4) TOP VIEW
LCC (L5-1) TOP VIEW
Means Quality, Service and Speed
1Q97
41
O2 O3
P4C1681, P4C1682
MAXIMUM RATINGS1
Symbol VCC Parameter Power Supply Pin with Respect to GND Terminal Voltage with Respect to GND (up to 7.0V) Operating Temperature Value 0.5 to +7 0.5 to VCC +0.5 55 to +125 Unit V Symbol TBIAS TSTG PT IOUT Parameter Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Value 55 to +125 65 to +150 1.0 50 Unit °C °C W mA
VTERM TA
V °C
RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE
Grade(2) Military Ambient Temperature GND 0V 0V VCC 5.0V ± 10% 5.0V ± 10%
CAPACITANCES(4)
VCC = 5.0V, TA = 25°C, f = 1.0MHz Symbol CIN COUT Parameter Input Capacitance Conditions Typ. Unit VIN = 0V 5 7 pF pF
55°C to +125°C 0°C to +70°C Commercial
Output Capacitance VOUT = 0V
DC ELECTRICAL CHARACTERISTICS
Over Recommended operating temperature and supply voltages(2)
Sym.
Parameter Input High Voltage Input Low Voltage CMOS Input High Voltage CMOS Input Low Voltage Input Clamp Diode Voltage Output Low Voltage (TTL Load) Output Low Voltage (CMOS Load) Output High Voltage (TTL Load) Output High Voltage (CMOS Load) Input Leakage Current Output Leakage Current
Test Conditions
P4C1681 P4C1682 Min Max 2.2 0.5(3) 0.5(3) VCC +0.5 0.8 0.2 1.2 0.4 0.2 2.4 VCC 0.2 10 5 10 5 +10 +5 +10 +5
Unit V V V V V V V V V µA µA µA µA
VIH VIL VHC VLC VCD VOL VOLC VOH VOHC ILI ILO
VCC 0.2 VCC +0.5 VCC = Min., IIN = 18 mA IOL = +8 mA, VCC = Min. IOLC = +100 µA, VCC = Min. IOH = 4 mA, VCC = Min. IOHC = 100 µA, VCC = Min. VCC = Max. VIN = GND to VCC VCC = Max. CE = VIH VOUT = GND to VCC Mil. Comm'l Mil. Comm'l
Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. Transient inputs with VIL and IIL not more negative than 3.0V and 100mA, respectively, are permissible for pulse widths up to 20 ns. 4. This parameter is sampled and not 100% tested.
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P4C1681, P4C1682
POWER DISSIPATION CHARACTERISTICS
Over recommended operating temperature and supply voltage(2) P4C1681 P4C1682 Min -- -- -- Max 130 130 100 35
Symbol I CC I CC ISB
Parameter Dynamic Operating Current 12, 15 Dynamic Operating Current 20, 25, 35 Standby Power Supply Current (TTL Input Levels) Standby Power Supply Current (CMOS Input Levels)
Test Conditions VCC = Max., f = Max., Outputs Open VCC = Max., f = Max., Outputs Open CE VIH, VCC = Max., f = Max., Outputs Open CE VHC, VCC = Max., f = 0, Outputs Open, VIN VLC or VIN VHC
Unit
Comm'l Mil. Comm'l
mA mA mA mA
ISB1
--
15
mA
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