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Details, datasheet, quote on part number:P4C188-25DMB
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| Part: | P4C188-25DMB |
| Category: | Memory => SRAM => SRAM |
| Description: | Org = 16K X 4 ;; Features. = Common I/o ;; ;; Taa (ns) = 10 to 25 ;; Package / Pins Dip = 22 ;; Package / Pins Soj = 24 ;; Package / Pins Soic / Sop = |
| Company: | Performance Semiconductor Corp. |
| Datasheet: | Download P4C188-25DMB datasheet File size : 77 kB |
| Request For quote: | Find where to buy P4C188-25DMB
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Datasheet text preview:
P4C188/188L
P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS
FEATURES
Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) 10/12/15/20/25 ns (Commercial) 12/15/20/25/35 (Industrial) 15/20/25/35/45 ns (Military) Low Power (Commercial/Military) 715 mW Active 12/15 550/660 mW Active 20/25/35/45 193/220 mW Standby (TTL Input) 83/110 mW Standby (CMOS Input) P4C188 15 mW Standby (CMOS Input) (P4C188L Military) Single 5V±10% Power Supply Data Retention with 2.0V Supply (P4C188L Military) Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) 22-Pin 300 mil DIP 24-Pin 300 mil SOJ 22-Pin 290 x 490 mil LCC
DESCRIPTION
The P4C188 and P4C188L are 65,536-bit ultra high speed static RAMs organized as 16K x 4. The CMOS memories require no clocks or refreshing and have equal access and cycle times. Inputs and outputs are fully TTL-compatible. The RAMs operate from a single 5V±10% tolerance power supply. With battery backup, data integrity is maintained for supply voltages down to 2.0V. Current drain is typically 10 µA from a 2.0V supply. Access times as fast as 12 nanoseconds are available, permitting greatly enhanced system speeds. CMOS is utilized to reduce power consumption to a low 715mW active, 193mW standby and only 5mW in the P4C188L version. The P4C188 and P4C188L are available in 22-pin 300 mil DIP, 24-pin 300 mil SOJ and 22-pin LCC packages providing excellent board level densities.
FUNCTIONAL BLOCK DIAGRAM
A (8) A I/O 1 I/O 2 I/O 3 I/O 4
ROW SELECT 65,536-BIT MEMORY ARRAY
PIN CONFIGURATIONS
V CC
22 1
A0 A1 A2 A3 A4 A5
1 2 3 4 5 6 7 8 9 10 11
22 21 20 19 18 17 16 15 14 13 12
V CC A 13 A 12 A 11 A 10 A9 I/O 4 I/O 3 I/O 2 I/O 1 WE A2 A3 A4 A5 A6 A7 A8
2 3 4 5 6 7 8 9 10 11 12
A 13
21 20 19 18 17 16 15 14 13
A1 A0
A 12 A 11 A 10 A9 I/O 4 I/O 3 I/O 2
INPUT DATA CONTROL
COLUMN I/O
A6 A7 A8 CE GND
GND
WE
COLUMN SELECT
CE A (6) WE A
DIP (P3, D3) TOP VIEW
LCC (L3) TOP VIEW
For SOJ pin configuration, please see Selection Guide Page.
Means Quality, Service and Speed
1Q97
63
I/O 1
CE
P4C188/188L
MAXIMUM RATINGS(1)
Symbol VCC Parameter Power Supply Pin with Respect to GND Terminal Voltage with Respect to GND (up to 7.0V) Operating Temperature Value 0.5 to +7 0.5 to VCC +0.5 55 to +125 Unit V Symbol TBIAS TSTG V °C PT I OUT Parameter Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Value 55 to +125 65 to +150 1.0 50 Unit °C °C W mA
VTERM TA
RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE
Grade(2) Military Ambient Temperature GND 0V 0V 0V VCC 5.0V ± 10% 5.0V ± 10% 5.0V ± 10%
CAPACITANCES(4)
VCC = 5.0V, TA = 25°C, f = 1.0MHz Symbol CIN COUT Parameter Input Capacitance Conditions Typ. Unit VIN = 0V 5 7 pF pF
55°C to +125°C 40°C to +85°C Industrial 0°C to +70°C Commercial
Output Capacitance VOUT = 0V
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2) Symbol VIH VIL VHC VLC VCD VOL VOH ILI ILO ISB Parameter Input High Voltage Input Low Voltage CMOS Input High Voltage CMOS Input Low Voltage Input Clamp Diode Voltage VCC = Min., IIN = 18 mA Output Low Voltage (TTL Load) Output High Voltage (TTL Load) Input Leakage Current Output Leakage Current IOL = +8 mA, VCC = Min. IOH = 4 mA, VCC = Min. VCC = Max. VIN = GND to VCC VCC = Max., CE = VIH, VOUT = GND to VCC Mil. Com'l. Mil. Com'l. 2.4 10 5 10 5 ___ ___ ___ ___ +10 +5 +10 +5 40 35 20 15 Test Conditions P4C188 Min Max 2.2 0.5(3) 0.5
(3)
VCC +0.5 0.8 0.2 1.2 0.4
P4C188L Unit Min Max 2.2 VCC +0.5 V 0.5(3) 0.5(3) 0.8 0.2 1.2 0.4 2.4 5 n/a 5 n/a ___ ___ ___ ___ +5 n/a +5 n/a 40 n/a 2.7 n/a V V V V V V µA µA mA
VCC 0.2 VCC +0.5 VCC 0.2 VCC +0.5
Standby Power Supply CE VIH Mil. Current (TTL Input Levels) VCC = Max ., Ind./Com'l. f = Max., Outputs Open Standby Power Supply Current (CMOS Input Levels) CE VHC Mil. VCC = Max., Ind./Com'l. f = 0, Outputs Open VIN VLC or VIN VHC
ISB1
mA
n/a = Not Applicable Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability. 2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. Transient inputs with VIL and IIL not more negative than 3.0V and 100mA, respectively, are permissible for pulse widths up to 20 ns. 4. This parameter is sampled and not 100% tested.
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P4C188/188L
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol Parameter Temperature Range Commercial ICC Dynamic Operating Current* Industrial Military 10 180 N/A N/A 12 170 180 N/A 15 160 170 170 20 155 160 160 25 150 155 155 35 N/A 150 150 45 N/A N/A 145 Unit mA mA mA
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL
DATA RETENTION CHARACTERISTICS (P4C188L Military Temperature Only)
Symbol VDR I CCDR tCDR t R Parameter VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time CE VCC 0.2V, VIN VCC 0.2V or VIN 0.2V Test Conditions Min 2.0 10 0 tRC§ 15 600 900 Typ.* VCC = 2.0V 3.0V Max VCC = 2.0V 3.0V Unit V µA ns ns
*TA = +125°C
§
tRC = Read Cycle Time This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM
DATA RETENTION MODE VCC t CDR CE VIH VDR VIH 4.5V VDR 2V 4.5V tR
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