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Part: P4C1982-20DM
Category:
Memory
-> SRAM
-> SRAM
Description: Org = 16K X 4 ;; Features. = Separate I/O, High-z Write ;; ;; Taa (ns) = 10 to 25 ;; Package / Pins Dip = 28 ;; Package / Pins Soj = 28 ;; Package / Pins Soic / Sop =
Company: Performance Semiconductor Corp.
Datasheet: Download P4C1982-20DM datasheet File size : 384 kB
Request For quote: Find where to buy P4C1982-20DM
Datasheet text preview:
P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS
FEATURES
Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) 10/12/15/20/25 ns (Commercial) 12/15/20/25/35 ns (Industrial) 15/20/25/35/45 ns (Military) Low Power Operation (Commercial/Military) 715 mW Active 12/15 550/660 mW Active 20/25/35/45 193/220 mW Standby (TTL Input) 83/110 mW Standby (CMOS Input) P4C1981/1981L 5.5 mW Standby (CMOS Input) P4C1981L/82L (Military) Output Enable and Dual Chip Enable Functions
P4C1981/1981L, P4C1982/1982L
5V ± 10% Power Supply Data Retention with 2.0V Supply, 10 µA Typical Current (P4C1981L/1982L (Military) Separate Inputs and Outputs P4C1981/L Input Data at Outputs during Write P4C1982/L Outputs in High Z during Write Fully TTL Compatible Inputs and Outputs Standard Pinout (JEDEC Approved) 28-Pin 300 mil DIP, SOJ 28-Pin 350 x 550 mil LCC
DESCRIPTION
The P4C1981/L and P4C1982/L are 65,536-bit (16Kx4) ultra high-speed static RAMs similar to the P4C198, but with separate data I/O pins. The P4C1981/L feature a transparent write operation when OE is low; the outputs of the P4C1982/L are in high impedance during the write cycle. All devices have low power standby modes. The RAMs operate from a single 5V ± 10% tolerance power supply. With battery backup, data integrity is maintained for supply voltages down to 2.0V. Current drain is typically 10 µA from 2.0V supply. Access times as fast as 10 nanoseconds are available, permitting greatly enhanced system operating speeds. CMOS is used to reduce power consumption to a low 715 mW active, 193 mW standby. For the P4C1982L and P4C1981L, power is only 5.5 mW standby with CMOS input levels. The P4C1981/L and P4C1982/L are members of a family of PACE RAMTM products offering fast access times. The P4C1981/L and P4C1982/L are available in 28-pin 300 mil DIP and SOJ, and in 28-pin 350x550 mil LCC packages providing excellent board level densities.
FUNCTIONAL BLOCK DIAGRAM
A (8) A I1 I2 I3 I4 O1 O2 O3 O4
ROW SELECT 65,536-BIT MEMORY ARRAY
PIN CONFIGURATIONS
VCC A 13
A0 A1 A2 A3 A4 A5 A6 A7 A8 I1
COLUMN SELECT INPUT DATA CONTROL
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
V CC A13 A 12 A11 A10 A9
I4 I3
A3 A4 A5 A6 A7 A8 I1 I2 CE1
3 4 5 6 7 8 9 10 11 12 13
OE
A2 A1 A0
2 1
28
27 26 25 24 23 22 21 20 19
A12 A11 A10 A9 I4 I3 O4 O3 O2
COLUMN I/O
O4 O3 O2 O1 WE CE2
I2 CE1 OE GND
14 15 16
GND CE2
18 17
CE2 WE OE P4C1982 P4C1981
A
(6)
A
DIP (P5, D5-2), SOJ (J5) TOP VIEW P4C1981/ 1982
LCC (L5) TOP VIEW
Means Quality, Service and Speed
1Q97
81
WE O1
CE1
P4C1981/1981L, P4C1982/1982L
MAXIMUM RATINGS(1)
Symbol VCC Parameter Power Supply Pin with Respect to GND Terminal Voltage with Respect to GND (up to 7.0V) Operating Temperature Value 0.5 to +7 0.5 to VCC +0.5 55 to +125 Unit V Symbol TBIAS TSTG V °C PT I OUT Parameter Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Value 55 to +125 65 to +150 1.0 50 Unit °C °C W mA
VTERM TA
RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE
Grade(2) Military Ambient Temperature GND 0V 0V 0V VCC 5.0V ± 10% 5.0V ± 10% 5.0V ± 10%
CAPACITANCES(4)
VCC = 5.0V, TA = 25°C, f = 1.0MHz Symbol CIN COUT Parameter Input Capacitance Conditions Typ. Unit VIN = 0V 5 7 pF pF
55°C to +125°C 40°C to +85°C Industrial 0°C to +70°C Commercial
Output Capacitance VOUT = 0V
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2) Symbol VIH VIL VHC VLC VCD VOL VOH ILI ILO Parameter Input High Voltage Input Low Voltage CMOS Input High Voltage CMOS Input Low Voltage Input Clamp Diode Voltage VCC = Min., IIN = 18 mA Output Low Voltage (TTL Load) Output High Voltage (TTL Load) Input Leakage Current Output Leakage Current IOL = +8 mA, VCC = Min. IOH = 4 mA, VCC = Min. VCC = Max. VIN = GND to VCC VCC = Max., CE1, CE2 = VIH VOUT = GND to VCC Mil. Com'l. Mil. Ind./Com'l. 2.4 10 5 10 5 ___ ___ ___ ___ +10 +5 +10 +5 40 35 20 15 Test Conditions P4C1981 / 1982 Min Max 2.2 0.5(3) 0.5(3) 0.8 0.2 1.2 0.4 2.4 5 n/a 5 n/a ___ ___ ___ ___ +5 n/a +5 n/a 40 n/a 1.0 n/a P4C1981L / 82L Unit Min Max VCC +0.5 2.2 VCC +0.5 V 0.5(3) 0.5(3) 0.8 0.2 1.2 0.4 V V V V V V µA µA
VCC 0.2 VCC +0.5 VCC 0.2 VCC +0.5
ISB
Standby Power Supply CE1, CE2 VIH, Mil. Current (TTL Input Levels) VCC = Max., Ind./Com'l. f = Max., Outputs Open Standby Power Supply Current (CMOS Input Levels) CE1, CE2 VHC, Mil. VCC = Max., Ind./Com'l. f = 0, Outputs Open VIN VLC or VIN VHC
mA
ISB1
mA
n/a = Not Applicable Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM ratingconditions for extended periods may affect reliability. 2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. Transient inputs with VIL and IIL not more negative than 3.0V and 100mA, respectively, are permissible for pulse widths up to 20 ns. 4. This parameter is sampled and not 100% tested.
82
P4C1981/1981L, P4C1982/1982L
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol Parameter Temperature Range Commercial Industrial Military
CE1 = VIL, CE2 = VIL, OE = VIH
10 180 N/A N/A
12 170 180 N/A
15 160 170 170
20 155 160 160
25 150 155 155
35 N/A 150 150
45 N/A N/A 145
Unit mA mA mA
I CC
Dynamic Operating Current*
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V.
DATA RETENTION CHARACTERISTICS (P4C1981L/P4C1982L Military Temperature Only)
Symbol VDR ICCDR tCDR tR *TA = +25°C
§
Parameter VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time
Test Condition
Min 2.0
Typ.* VCC= 2.0V 3.0V 10 15
Max VCC= 2.0V 3.0V 600 900
Unit V µA ns ns
CE1 or CE2 VCC 0.2V, VIN VCC 0.2V or VIN 0.2V
0 tRC§
tRC = Read Cycle Time This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM
DATA RETENTION WAVEFORM
DATA RETENTION MODE VCC t CDR CE1 or CE2 VDR VIH VIH 4.5V VDR 2V 4.5V tR
1348 07
83
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