Details, datasheet, quote on part number: 1N4004G
CategoryDiscrete => Diodes & Rectifiers => Glass Passivated
TitleGlass Passivated
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload 1N4004G datasheet
Cross ref.Similar parts: 1N5616, 1N5060GP, 1N5060, 1N4384GP, 1N4246GP, 1N4004GPP, 1N4004GP, 1N4004F, 1N4246
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Features, Applications

FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Available in ammo-pack. DESCRIPTION

This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.

Rugged glass package, using a high temperature alloyed construction.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM 1N4007G VR continuous reverse voltage 1N4006G 1N4007G IF(AV) average forward current PARAMETER repetitive peak reverse voltage

averaged over any 20 ms period; Tamb = 75 C; see Fig.2 averaged over any 20 ms period; Tamb = 100 C; see Fig.2

continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature

ELECTRICAL CHARACTERISTICS = 25 C; unless otherwise specified. SYMBOL VF VF(AV) IR IR(AV) PARAMETER forward voltage full-cycle average forward voltage reverse current full-cycle average reverse current IF(AV) VR = VRmax VR = VRmax; Tamb 100 C

THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 m, see Fig.4. For more information please refer to the "General Part of associated Handbook". PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length 10 mm VALUE 46 100 UNIT K/W


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