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Details, datasheet, quote on part number:1N4532
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| Part: | 1N4532 |
| Category: | Discrete => Diodes & Rectifiers => Switching Diodes |
| Description: | 1N4531; 1N4532; High-speed Diodes;; Package: SOD68 (DO-34) |
| Company: | Philips Semiconductors |
| Datasheet: | Download 1N4532 datasheet File size : 43 kB |
| Request For quote: | Find where to buy 1N4532
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D050
1N4531; 1N4532 High-speed diodes
Product specification Supersedes data of April 1996 1996 Sep 03
Philips Semiconductors
Product specification
High-speed diodes
FEATURES · Hermetically sealed leaded glass SOD68 (DO-34) package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V · Repetitive peak reverse voltage: max. 75 V · Repetitive peak forward current: max. 450 mA. APPLICATIONS · High-speed switching · Protection diodes in reed relays. DESCRIPTION
1N4531; 1N4532
The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages.
k handbook, halfpage
a
MAM156
The diodes are type branded.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj total power dissipation storage temperature junction temperature Tamb = 25 °C - - - - -65 - 4 1 0.5 500 +200 200 A A A mW °C °C see Fig.2 CONDITIONS MIN. - - - - MAX. 75 75 200 450 V V mA mA UNIT
1996 Sep 03
2
Philips Semiconductors
Product specification
High-speed diodes
ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current IN4531 IN4532 Cd diode capacitance IN4531 IN4532 trr reverse recovery time IN4531 IN4532 reverse recovery time IN4532 Vfr forward recovery voltage when switched from IF = 10 mA to IR = 60 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 100 mA; tr 30 ns; see Fig.8 see Fig.5 VR = 20 V VR = 20 V; Tj = 150 °C VR = 50 V VR = 50 V; Tj = 150 °C f = 1 MHz; VR = 0; see Fig.6 CONDITIONS IF = 10 mA; see Fig.3
1N4531; 1N4532
MIN. - - - - - - - - - - -
MAX. 1 000 25 50 100 100 4 2 4 2 4 3
UNIT mV nA µA nA µA pF pF ns ns ns V
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 5 mm lead length 5 mm; note 1 VALUE 120 350 UNIT K/W K/W
1996 Sep 03
3
Philips Semiconductors
Product specification
High-speed diodes
GRAPHICAL DATA
1N4531; 1N4532
handbook, halfpage
300
MBG450
handbook, halfpage
600
MBG458
IF (mA) 200
IF (mA) 400
(1) (2) (3)
100
200
0 0 100 Tamb (oC) 200
0 0 (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. 1 VF (V) 2
Lead length 5 mm.
Fig.2
Maximum permissible continuous forward current as a function of ambient temperature.
Fig.3
Forward current as a function of forward voltage.
102 handbook, full pagewidth IFSM (A)
MBG704
10
1
10-1 1 10
102
103
tp (µs)
104
Based on square wave currents. Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 03
4
Philips Semiconductors
Product specification
High-speed diodes
1N4531; 1N4532
103 handbook, halfpage IR (µA)
MGD010
MGD004
handbook, halfpage
1.2
10
2
Cd (pF) 1.0
10 0.8 1
10-1
0.6
10-2 0 100 Tj (oC) 200
0.4 0 10 VR (V) 20
VR = 50 V Solid line; maximum values. Dotted line; typical values. f = 1 MHz; Tj = 25 °C.
Fig.5
Reverse current as a function of junction temperature.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
1996 Sep 03
5
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