Details, datasheet, quote on part number: 1N473XASeries
CategoryDiscrete => Diodes & Rectifiers => Current Limiter/Regulator Diodes
DescriptionVoltage Regulator Diodes
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload 1N473XASeries datasheet


Features, Applications

FEATURES Total power dissipation: max. 1000 mW Tolerance series: 5% Working voltage range: nom. 24 V. APPLICATIONS Low voltage stabilizers.

DESCRIPTION Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. The series consists of 22 types with nominal working voltages from 24 V.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZM IZSM Ptot Tstg Tj PARAMETER continuous forward current working current non-repetitive peak reverse current total power dissipation storage temperature junction temperature Tamb 50 C CONDITIONS MIN. - MAX. 500 UNIT mA

see Table "Per type" see Table "Per type" mW C

ELECTRICAL CHARACTERISTICS Total series = 25 C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS = 200 mA; see Fig.3 MIN. - MAX. 1.2 V UNIT


Related products with the same datasheet
Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
1N4740A 1N4728A to 1N4749A; Voltage Regulator Diodes
1N474XASeries Voltage Regulator Diodes
1N5059 1N5059 to 1N5062; Controlled Avalanche Rectifiers;; Package: SOD57
1N5225B 1N5225B to 1N5267B; Voltage Regulator Diodes
1N522XBSeries Voltage Regulator Diodes
1N5230B 1N5225B to 1N5267B; Voltage Regulator Diodes
1N523XBSeries Voltage Regulator Diodes
1N5240B 1N5225B to 1N5267B; Voltage Regulator Diodes
1N524XBSeries Voltage Regulator Diodes
1N5250B 1N5225B to 1N5267B; Voltage Regulator Diodes
1N525XBSeries Voltage Regulator Diodes
1N5260B 1N5225B to 1N5267B; Voltage Regulator Diodes
1N526XBSeries Voltage Regulator Diodes
1N5817 1N5817; 1N5818; 1N5819; Schottky Barrier Diodes
1N821 Voltage Reference Diodes

74AHC245PW : 74AHC245; 74AHCT245; Octal Bus Tranceiver; 3-state;; Package: SOT163 (SO20), SOT360-1 (TSSOP20)

BZG03-C56 : BZG03 Series; Voltage Regulator Diodes

HEF4006BPN : CMOS/BiCMOS->4000 Family HEF4006B MSI; 18-stage Static Shift Register

MAX6326-26W : BZA800A-series; Quadruple Esd Transient Voltage Suppressor

N74F543N : Octal Registered Transceiver, Non-inverting 3-state

N74F640N : 74F640; Octal Bus Transceiver, Inverting (3-State)

SAA5645HL/NNNN : SAA56xx; Enhanced TV Microcontrollers With On-screen Display (OSD)

TZA3046 : The TZA3046 is a transimpedance amplifier with Automatic Gain Control (AGC), designed to be used in Fiber Channel/Gigabit Ethernet (FC/GE) fiber optic links. It amplifies the current generated by a photo detector (PIN diode or avalanche photodiode) and converts it to a differential output voltage. I

Same catergory

1N4933 : Discrete, Rectifiers, Fast Efficient Rectifiers. n FAST SWITCHING FOR HIGH EFFICIENCY n HIGH SURGE CAPABILITY n 1.0 AMP OPERATION = 55C, WITH NO THERMAL RUNAWAY n MEETS UL 94V-0 1N4933. 37 Series Maximum Ratings Peak Repetitive Reverse VoltageVRRM RMS Reverse VoltageVR(rms) DC Blocking VoltageVDC Average Forward Rectified CurrentIF(av) = 55C Non-Repetitive Peak Forward Surge CurrentIFSM @ Rated.

1N6616 : VRWM = 400V ;; Io(A) = 3.0 ;; Trr(nS) = 70 ;; Package = Axial-leaded,glass ;; Terminations = Leads.

1SS345 : Silicon Epitaxial Schottky Barrier Diode, UHF Detector, Mixer Application.

2N2643DCSM : Screening Options Available = ;; Polarity = NPN ;; Package = LCC2 (MO-041BB) ;; Vceo = 45V ;; IC(cont) = 0.03A ;; HFE(min) = 130 ;; HFE(max) = - ;; @ Vce/ic = 5V / 1mA ;; FT = 32MHz ;; PD = 0.3W.

2SJ230 : . Low ON resistance. Ultrahigh-speed switching. Low-voltage drive. Its height onboard is 9.5mm. Meets radial taping. s Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions.

2SK1184 : . Symbol VDSS VGSS ID (pulse) PD EAS Tch Tstg Ratings (Tch 150C) Symbol V(BR) DSS I GSS I DSS VTH Re (yfs) RDS (on) Ciss Coss on t off min Ratings typ max Unit pF ns .

BF420 : NPN Silicon Transistor With Reverse Voltage. NPN Silicon Transistors With High Reverse Voltage q High breakdown voltage q Low collector-emitter saturation voltage q Low capacitance q Complementary types: BF 423 (PNP) 3 1 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage RBE 2.7 k Collector-base voltage Emitter-base voltage Collector current Peak base current Junction.

DL4148 : Package Type : Minimelf, if : , VRM : 100V. Low Current Leakage Compression Bond Construction Low Cost Surface Mount Applications Operating Temperature: to +150C Storage Temperature: to +150C Maximum Thermal Resistance; 35C/W Junction To Ambient Reverse Voltage Peak Reverse Voltage Average Rectified Current Power Dissipation Junction Temperature Peak Forward Surge Current Maximum Instantaneous.

FR104G : Glass Passivated. Pakage = DO-41 ;; Max. Reverse Voltage VRM (V)= 400 ;; Max. Aver. Rect. Current io (A)= 1 ;; Ifsm (A)= 30.

MBR3030PT-MBR3060PT : 5 to 100 Amp. 20a Schottky Barrier Rectifier. Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 Case:.

MURA230T3 : Surface Mount Ultrafast Power Rectifiers , Package: Sma, Pins=2. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage.

P600AthruP600M : . Plastic package has Underwriters Laboratories Flammability Classification 94V-0 High forward current capability Construction utilizes void-free molded plastic technique High surge current capability Case: Void-free molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250C/10.

S4VB60 : General Purpose Rectifiers/ Sqip Bridges. Storage Temperature Operating Junction Temperature Maximum Reverse Voltage Average Rectified Forward Current Peak Surge Forward Current Squared Time Mounting Torque Symbol Conditions Tstg Tj VRM O 50Hz sine wave, R-load, Ta=40 With heatsink fa=10/W I FSM 50Hz sine wave, Non-repetitive 1cycle peak value, 2t 1mst10ms@Tj=25 TOR iRecommended torque : 0.5Nmj.

050022R0ADZB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.000002 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 2.00E-6 microF ; Capacitance Tolerance: 25 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

06HV60P102KC : CAP,CERAMIC,1NF,600VDC,10% -TOL,10% +TOL,C0G TC CODE,-30,30PPM TC. s: Dielectric: Ceramic Composition.

POT3104 : RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 10 ohm - 2000000 ohm. s: Potentiometer Type: Trimmer ; Resistance Taper: Linear ; Technology / Construction: Cermet ; Mounting / Packaging: ThroughHole ; Operating Temperature: -55 to 70 C (-67 to 158 F).

SSM3J35MFV : 130 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 45 ohms ; Package Type: VESM, 3 PIN ; Number of units in IC: 1.

TCU20A40 : 20 A, 400 V, SILICON, RECTIFIER DIODE. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, FAST RECOVERY ; IF: 20000 mA ; Pin Count: 2 ; Number of Diodes: 2.

2500-00F : 1 ELEMENT, 270 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Core Material: Iron ; Lead Style: Axial, WIRE ; Application: General Purpose, RF Choke ; Inductance Range: 270 microH ; Rated DC Current: 126 milliamps ; Operating Temperature: -55 to 105 C (-67 to 221 F).

0-C     D-L     M-R     S-Z