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Part: 1N4743A

Category:
 Discrete
   -> Diodes & Rectifiers
     -> Voltage Regulators

Description: 1N4728A to 1N4749A; Voltage Regulator Diodes

Company: Philips Semiconductors

Datasheet: Download 1N4743A datasheet     File size : 388 kB

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Datasheet text preview:
DISCRETE SEMICONDUCTORS

DATA SHEET
book, halfpage

M3D130

1N4728A to 1N4749A Voltage regulator diodes
Product specification Supersedes data of April 1992 1996 Apr 26

Philips Semiconductors

Product specification

Voltage regulator diodes
FEATURES · Total power dissipation: max. 1 000 mW · Tolerance series: ±5% · Working voltage range: nom. 3.3 to 24 V. APPLICATIONS · Low voltage stabilizers.
The diodes are type branded.
handbook, halfpage

1N4728A to 1N4749A

DESCRIPTION Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. The series consists of 22 types with nominal working voltages from 3.3 to 24 V.

k

a

MAM241

Fig.1 Simplified outline (SOD66; DO-41) and symbol.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZM IZSM Ptot Tstg Tj PARAMETER continuous forward current working current non-repetitive peak reverse current total power dissipation storage temperature junction temperature Tamb = 50 °C CONDITIONS MIN. - MAX. 500 UNIT mA

see Table "Per type" see Table "Per type" - -65 -65 1 000 +200 +200 mW °C °C

ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 200 mA; see Fig.3 MIN. - MAX. 1.2 V UNIT

1996 Apr 26

2

1996 Apr 26 3

Philips Semiconductors

Per type Tj = 25 °C; unless otherwise specified. WORKING VOLTAGE VZ (V)(1) at IZtest NOM. 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A 1N4736A 1N4737A 1N4738A 1N4739A 1N4740A 1N4741A 1N4742A 1N4743A 1N4744A 1N4745A 1N4746A 1N4747A 1N4748A 1N4749A Notes 1. VZ is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25 °C. 2. Half square wave or equivalent sinewave pulse 1/120 second duration superimposed on IZtest. 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 76 69 64 58 53 49 45 41 37 34 31 28 25 23 21 19 17 15.5 14 12.5 11.5 10.5 TEST CURRENT IZtest (mA) DIFFERENTIAL RESISTANCE rdif () at IZtest MAX. 10 10 9 9 8 7 5 2 3.5 4 4.5 5 7 8 9 10 14 16 20 22 23 25 rdif () at IZ MAX. 400 400 400 400 500 550 600 700 700 700 700 700 700 700 700 700 700 700 750 750 750 750 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 IZ (mA) REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MAX. 100 100 50 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 1 1 1 1 1 1 2 3 4 5 6 7 7.6 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 WORKING CURRENT IZM (mA) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (mA)(2) MAX. 1 380 1 260 1 190 1 070 970 890 810 730 660 605 550 500 454 414 380 344 304 285 250 225 205 190

Voltage regulator diodes

TYPE No.

VR (V) MAX. 276 252 234 217 193 178 162 146 133 121 110 100 91 83 76 69 61 57 50 45 41 38

1N4728A to 1N4749A

Product specification

Philips Semiconductors

Product specification

Voltage regulator diodes
THERMAL CHARACTERISTICS SYMBOL Rth j-tp PARAMETER thermal resistance from junction to tie-point CONDITIONS

1N4728A to 1N4749A

VALUE 110

UNIT K/W

lead length 4 mm; see Fig.2

1996 Apr 26

4

Philips Semiconductors

Product specification

Voltage regulator diodes
GRAPHICAL DATA

1N4728A to 1N4749A

103 handbook, full pagewidth Rth j-tp (K/W) =1 0.75 0.50 0.33 0.20 0.10 0.05

MBG928

102

10

0.02 0.01 0 1 10-1

tp T

=

tp T

1

10

102

103

104

tp (ms)

105

Fig.2 Thermal resistance from junction to tie-point; lead length 4 mm.

handbook, halfpage

300

MBG925

IF (mA) 200

(1)

(2)

100

0 0 0.5 VF (V) 1.0

(1) Tj = 200 °C; typical values. (2) Tj = 25 °C; typical values.

Fig.3

Forward current as a function of forward voltage.

1996 Apr 26

5




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