Details, datasheet, quote on part number: 1N5059
Part1N5059
CategoryDiscrete => Diodes & Rectifiers => Rectifier Diodes
Description1N5059 to 1N5062; Controlled Avalanche Rectifiers;; Package: SOD57
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload 1N5059 datasheet
Cross ref.Similar parts: 1N4003, STTH1R02, STTH1R02RL, STTH102, 1N4002G, 1N4003G, BYT51A, BYT51B, BYT51D, BYW52
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Features, Applications

FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack. DESCRIPTION

Rugged glass package, using a high temperature alloyed construction.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM 1N5061 1N5062 VRWM crest working reverse voltage 1N5062 VR continuous reverse voltage 1N5061 1N5062 IF(AV) average forward current PARAMETER repetitive peak reverse voltage

This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.

Ttp = 45 C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 Tamb = 80 C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4

non-repetitive peak forward current non-repetitive peak reverse avalanche energy storage temperature junction temperature

10 ms half sinewave = 120 mH; = Tj max prior to surge; inductive load switched off see Fig.5

ELECTRICAL CHARACTERISTICS = 25 C; unless otherwise specified. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage 1N5062 IR trr Cd reverse current VR = VRRMmax; see VR = VRRMmax; = 165 C; see Fig.7 reverse recovery time when switched from 1 A; measured 0.25 A; see Fig.10 diode capacitance = 1 MHz; see Fig.8 CONDITIONS = Tj max; see 1 A; see 0.1 mA MIN. -

THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 m, see Fig.9. For more information please refer to the "General Part of associated Handbook". PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length 10 mm VALUE 46 100 UNIT K/W


 

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