Details and datasheet on part: 1N5230B

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Part: 1N5230B

Category:
Discrete
-> Diodes & Rectifiers
-> Voltage Regulators

Description: 1N5225B to 1N5267B; Voltage Regulator Diodes

Company: Philips Semiconductors

Datasheet: Download 1N5230B datasheet File size : 103 kB

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Datasheet text preview:
DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

1N5225B to 1N5267B Voltage regulator diodes
Product specification Supersedes data of April 1992 1996 Apr 26

Philips Semiconductors

Product specification

Voltage regulator diodes
FEATURES · Total power dissipation: max. 500 mW · Tolerance series: ±5% · Working voltage range: nom. 3.0 to 75 V · Non-repetitive peak reverse power dissipation: max. 40 W.
handbook, halfpage

1N5225B to 1N5267B

DESCRIPTION Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The series consists of 43 types with nominal working voltages from 3.0 to 75 V.

k

a
MAM239

APPLICATIONS · Low-power voltage stabilizers or voltage references.
The diodes are type branded.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation tp = 100 µs; square wave; Tj = 25 °C prior to surge Tamb = 50 °C; lead length max.; note 1 Lead length 8 mm; note 2 PZSM non-repetitive peak reverse power dissipation tp = 100 µs; square wave; Tj = 25 °C prior to surge; see Fig.3 tp = 8.3 ms; square wave; Tj 55 °C prior to surge Tstg Tj Notes 1. Device mounted on a printed circuit-board without metallization pad. 2. Tie-point temperature 75 °C. ELECTRICAL CHARACTERISTICS Table 1 Tj = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 200 mA; see Fig.4 MAX. 1.1 UNIT V storage temperature junction temperature CONDITIONS MIN. - MAX. 250 UNIT mA

see Table "Per type" - - - - -65 -65 400 500 40 10 +200 +200 mW mW W W °C °C

1996 Apr 26

2

1996 Apr 26 3

Philips Semiconductors

Per type Tj = 25 °C; unless otherwise specified. WORKING DIFFERENTIAL VOLTAGE RESISTANCE VZ (V)(1) rdif () at IZtest at IZtest NOM. 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 MAX. 1 600 1 600 1 700 1 900 2 000 1 900 1 600 1 600 1 600 1 000 750 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 TEMP. COEFF. SZ (%/K) at IZ(2) DIODE CAP. TEST Cd (pF) CURRENT IZtest (mA) at f = 1 MHz; at VR = 0 V MAX. 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 450 450 450 450 450 450 300 300 300 200 200 150 150 150 150 90 85 85 80 80 75 75 75 70 70 60 REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MAX. 50 25 15 10 5 5 5 5 5 5 3 3 3 3 3 3 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VR (V) 1.0 1.0 1.0 1.0 1.0 1.5 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4 9.1 9.9 10.0 11.0 12.0 13.0 14.0 14.0 15.0 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) tp = 100 µs; Tamb = 25 °C MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.5 3.0 3.0 2.5 2.5 2.5 2.0 2.0 1.5 1.5 1.5 1.5 1.5

Voltage regulator diodes

TYPE No.

MAX. -0.075 -0.070 -0.065 -0.060 ±0.055 ±0.030 ±0.030 +0.038 +0.038 +0.045 +0.050 +0.058 +0.062 +0.065 +0.068 +0.075 +0.076 +0.077 +0.079 +0.082 +0.082 +0.083 +0.084 +0.085 +0.086 +0.086

1N5225B to 1N5267B

Product specification

1996 Apr 26 4

Philips Semiconductors

TYPE No.

WORKING DIFFERENTIAL VOLTAGE RESISTANCE VZ (V)(1) rdif () at IZtest at IZtest NOM. MAX. 600 600 600 600 600 600 700 700 800 900 1 000 1 100 1 300 1 400 1 400 1 600 1 700

TEMP. COEFF. SZ (%/K) at IZ(2)

DIODE CAP. TEST Cd (pF) CURRENT IZtest (mA) at f = 1 MHz; at VR = 0 V MAX. 5.6 5.2 5.0 4.6 4.5 4.2 3.8 3.4 3.2 3.0 2.7 2.5 2.2 2.1 2.0 1.8 1.7 60 55 55 50 50 50 45 45 45 40 40 40 40 40 35 35 35

REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MAX. 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VR (V) 17.0 18.0 19.0 21.0 21.0 23.0 25.0 27.0 30.0 33.0 36.0 39.0 43.0 46.0 47.0 52.0 56.0

NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) tp = 100 µs; Tamb = 25 °C MAX. 1.25 1.25 1.25 1.0 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.3 0.3 0.25 0.2

Voltage regulator diodes

MAX. +0.087 +0.088 +0.089 +0.090 +0.091 +0.091 +0.092 +0.093 +0.094 +0.095 +0.095 +0.096 +0.096 +0.097 +0.097 +0.097 +0.098

1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B 1N5257B 1N5258B 1N5259B 1N5260B 1N5261B 1N5262B 1N5263B 1N5264B 1N5265B 1N5266B 1N5267B Notes

22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75

1N5225B to 1N5267B

1. VZ is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25 °C. 2. For types 1N5225B to 1N5242B the IZ current is 7.5 mA; for 1N5243B and higher IZ = IZtest. SZ values valid between 25 °C and 125 °C.

Product specification

Philips Semiconductors

Product specification

Voltage regulator diodes
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER

1N5225B to 1N5267B

CONDITIONS

VALUE 300 380

UNIT K/W K/W

thermal resistance from junction to tie-point lead length 10 mm thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1

1996 Apr 26

5

Others parts begin by 1n
1N-1 1N-2 1N-3 1N-4 1N-5 1N-6 1N-7 1N-8 1N-9 1N-10 1N-11 1N-12 1N-13 1N-14 1N-15 1N-16 1N-17 1N-18 1N-19 1N-20 1N-21 1N-22 1N-23 1N-24 1N-25 1N-26 1N-27 1N-28 1N-29 1N-30 1N-31 1N-32 1N-33 1N-34 1N-35 1N-36 1N-37 1N-38 1N-39 1N-40 1N-41 1N-42 1N-43 1N-44 1N-45 1N-46 1N-47 1N-48 1N-49 1N-50 1N-51 1N-52 1N-53 1N-54 1N-55 1N-56 1N-57 1N-58 1N-59 1N-60 1N-61 1N-62 1N-63 1N-64 1N-65 1N-66 1N-67 1N-68 1N-69 1N-70 1N-71 1N-72 1N-73 1N-74 1N-75 1N-76 1N-77 1N-78 1N-79 1N-80