Details, datasheet, quote on part number: 1N5817
CategoryDiscrete => Diodes & Rectifiers => Schottky Barrier Rectifiers => <5 AMP
Title<5 AMP
Description1N5817; 1N5818; 1N5819; Schottky Barrier Diodes
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload 1N5817 datasheet
Cross ref.Similar parts: 1N5817G, 11DQ015, 1N17, 1N5817-E3/54, BAS3010B-03W, BAS3010A-03W, 1N5817-AP-HF, 1N5817-BP-HF
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Features, Applications

FEATURES Low switching losses Fast recovery time Guard ring protected Hermetically sealed leaded glass package. APPLICATIONS Low power, switched-mode power supplies Rectifying Polarity protection.

DESCRIPTION The to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL 1N5818 1N5819 VRSM non-repetitive peak reverse voltage 1N5818 1N5819 VRRM repetitive peak reverse voltage 1N5818 1N5819 VRWM crest working reverse voltage 1N5818 1N5819 IF(AV) IFSM average forward current non-repetitive peak forward current PARAMETER continuous reverse voltage

1. Refer to SOD81 standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request.


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