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Details, datasheet, quote on part number:1N5819
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| Part: | 1N5819 |
| Category: | Discrete => Diodes & Rectifiers => Schottky Barrier Rectifiers |
| Description: | 1N5817; 1N5818; 1N5819; Schottky Barrier Diodes |
| Company: | Philips Semiconductors |
| Datasheet: | Download 1N5819 datasheet File size : 44 kB |
| Request For quote: | Find where to buy 1N5819
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
1N5817; 1N5818; 1N5819 Schottky barrier diodes
Product specification Supersedes data of April 1992 1996 May 03
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES · Low switching losses · Fast recovery time · Guard ring protected · Hermetically sealed leaded glass package. APPLICATIONS · Low power, switched-mode power supplies · Rectifying · Polarity protection.
handbook, 4 columns
1N5817; 1N5818; 1N5819
DESCRIPTION The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology.
(1) Implotec is a trademark of Philips.
k
a
MAM218
Fig.1 Simplified outline (SOD81) and symbol.
1996 May 03
2
Philips Semiconductors
Product specification
Schottky barrier diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR 1N5817 1N5818 1N5819 VRSM non-repetitive peak reverse voltage 1N5817 1N5818 1N5819 VRRM repetitive peak reverse voltage 1N5817 1N5818 1N5819 VRWM crest working reverse voltage 1N5817 1N5818 1N5819 IF(AV) IFSM average forward current non-repetitive peak forward current PARAMETER continuous reverse voltage
1N5817; 1N5818; 1N5819
CONDITIONS - - - - - - - - - - - - Tamb = 55 °C; Rth j-a = 100 K/W; note 1; VR(equiv) = 0.2 V; note 2 t = 8.3 ms half sine wave; JEDEC method; Tj = Tj max prior to surge: VR = 0 - -
MIN.
MAX. 20 30 40 24 36 48 20 30 40 20 30 40 1 25 V V V V V V V V V V V V A A
UNIT
Tstg Tj Notes
storage temperature junction temperature
-65 -
+175 125
°C °C
1. Refer to SOD81 standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request.
1996 May 03
3
Philips Semiconductors
Product specification
Schottky barrier diodes
ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage 1N5817 see Fig.2 IF = 0.1 A IF = 1 A IF = 3 A VF forward voltage 1N5818 see Fig.2 IF = 0.1 A IF = 1 A IF = 3 A VF forward voltage 1N5819 see Fig.2 IF = 0.1 A IF = 1 A IF = 3 A IR Cd reverse current diode capacitance 1N5817 1N5818 1N5819 Note 1. Pulsed test: tp = 300 µs; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD81 standard mounting conditions. PARAMETER thermal resistance from junction to ambient VR = VRRMmax; note 1 VR = VRRMmax; Tj = 100 °C VR = 4 V; f = 1 MHz CONDITIONS
1N5817; 1N5818; 1N5819
MIN. - - - - - - - - - - - - - - - - - - - - - - - - -
TYP.
MAX. 320 450 750 330 550 875 340 600 900 1 10 - - -
UNIT
mV mV mV mV mV mV mV mV mV mA mA pF pF pF
80 50 50
CONDITIONS note 1
VALUE 100
UNIT K/W
1996 May 03
4
Philips Semiconductors
Product specification
Schottky barrier diodes
GRAPHICAL DATA
1N5817; 1N5818; 1N5819
handbook, halfpage
5
MBE634
IF (A)
4
Tj = 125 oC
25 oC
3
2
1
0 0 0.5 VF (V) 1
Fig.2 Typical forward voltage.
1 a=3 PF(AV) (W) 2.5 2 1.57 1.42 1
MBE642
0.5
0 0 0.5 1 1.5 IF(AV) (A) 2
Fig.3
1N817. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 5
1996 May 03
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