|
Details, datasheet, quote on part number:1PS74SB43
| |
| Part: | 1PS74SB43 |
| Category: | Discrete => Diodes & Rectifiers => Schottky Diodes |
| Description: | 1PS74SB43; Schottky Barrier Diode;; Package: SOT457 (TSOP6, SMT6, SSOT6) |
| Company: | Philips Semiconductors |
| Datasheet: | Download 1PS74SB43 datasheet File size : 56 kB |
| Request For quote: | Find where to buy 1PS74SB43
|
| |
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D302
1PS74SB43 Schottky barrier diode
Product specification 1999 Dec 10
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES · Ultra fast switching speed · Low forward voltage · Fast recovery time · Guard ring protected · Small plastic SMD package · Capability of absorbing very high surge current. APPLICATIONS · Rectification · Circuit protection · Polarity protection · Switched-mode power supplies.
1 2 3
MAM421
1PS74SB43
PINNING PIN 1 2 3 4 5 6 anode cathode anode anode cathode anode DESCRIPTION
handbook, halfpage 6
5
4
2, 5
1, 3, 4, 6
DESCRIPTION Planar Schottky barrier diode encapsulated in an SC-74 (SOT457) small plastic SMD package.
Marking code: P2.
Top view
Fig.1 Simplified outline SC-74 (SOT457) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFSM IRSM Tstg Tj Note 1. Pins 1, 3, 4 and 6 are connected in parallel; pins 2 and 5 are connected in parallel. PARAMETER continuous reverse voltage continuous forward current non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature tp = 8.3 ms; half sinewave; JEDEC method; note 1 tp = 100 µs CONDITIONS - - - - -65 - MIN. MAX. 40 1 27 0.5 +150 125 UNIT V A A A °C °C
1999 Dec 10
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER continuous forward voltage CONDITIONS see Fig.2; note 1 IF = 0.1 A IF = 1 A IR Cd Note 1. Pulsed test: tp = 300 µs; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-74 (SOT457) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS continuous reverse current diode capacitance VR = 10 V; note 1; see Fig.3 VR = 40 V; note 1; see Fig.3 VR = 4 V; f = 1 MHz; see Fig.4 280 460 15 60 65
1PS74SB43
TYP.
MAX. 330 500 40 300 80
UNIT mV mV µA µA pF
VALUE 200
UNIT K/W
1999 Dec 10
3
Philips Semiconductors
Product specification
Schottky barrier diode
GRAPHICAL DATA
103 handbook, halfpage IF (mA) 102
MGL923
1PS74SB43
4 handboo1,0 k halfpage
MLC389
(1) (2)
IR (µA) 10
3
(3)
10 2
(1) (2) (3) (4)
(4)
10 10
1 0 (1) Tamb = 125 °C. (2) Tamb = 100 °C. (3) Tamb = 75 °C. (4) Tamb = 25 °C. 0.2 0.4 VF (V) 0.6
1 0 (1) Tamb = 125 °C. (2) Tamb = 100 °C. (3) Tamb = 75 °C. (4) Tamb = 25 °C. 10 20 30 V R (V) 40
Fig.2
Forward current as a function of forward voltage; typical values.
Fig.3
Reverse current as a function of reverse voltage; typical values.
10 3 handbook, halfpage
MLC390
Cd (pF)
10 2
10 0 8 16 24 32 V (V) 40 R
f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse voltage; typical values.
1999 Dec 10
4
Philips Semiconductors
Product specification
Schottky barrier diode
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
1PS74SB43
SOT457
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A
A1
1
e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT457
REFERENCES IEC JEDEC EIAJ SC-74
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Dec 10
5
|
|
