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Details, datasheet, quote on part number:1PS75SB45
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| Part: | 1PS75SB45 |
| Category: | Discrete => Diodes & Rectifiers => Schottky Diodes |
| Description: | 1PS75SB45; Schottky Barrier Double Diode;; Package: SOT416 (EMT3, SMPAK) |
| Company: | Philips Semiconductors |
| Datasheet: | Download 1PS75SB45 datasheet File size : 55 kB |
| Request For quote: | Find where to buy 1PS75SB45
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
1PS75SB45 Schottky barrier double diode
Product specification Supersedes data of 1997 Nov 07 1999 Apr 26
Philips Semiconductors
Product specification
Schottky barrier double diode
FEATURES · Low forward voltage · Guard ring protected · Ultra small plastic SMD package · Low diode capacitance.
handbook, halfpage
1PS75SB45
DESCRIPTION Planar Schottky barrier double diode encapsulated in a SOT416 (SC75) ultra small plastic SMD package.
3
3
APPLICATIONS · Ultra high-speed switching · Voltage clamping · Protection circuits · Blocking diodes.
Marking code: 45. 1 Top view 2
1
2
MAM377
Fig.1 Simplified outline SOT416; (SC75) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF IFRM IFSM Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp 1 s; 0.5 tp < 10 ms - - - - -65 - -65 40 120 120 200 +150 150 +150 V mA mA mA °C °C °C PARAMETER CONDITIONS MIN. MAX. UNIT
1999 Apr 26
2
Philips Semiconductors
Product specification
Schottky barrier double diode
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per diode VF continuous forward voltage see Fig.2 IF = 1 mA IF = 10 mA IF = 40 mA IR Cd Note 1. Pulse test: tp = 300 µs; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC75 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS continuous reverse current charge carrier life time diode capacitance VR = 30 V; note 1; see Fig.3 VR = 40 V; note 1; see Fig.3 IF = 5 mA; Krakauer method VR = 0 ; f = 1 MHz; see Fig.5 380 500 1 1 10 100 5 PARAMETER CONDITIONS
1PS75SB45
MAX.
UNIT
mV mV V µA µA ps pF
VALUE 833
UNIT K/W
1999 Apr 26
3
Philips Semiconductors
Product specification
Schottky barrier double diode
GRAPHICAL DATA
MLC361 - 1
1PS75SB45
2 handboo1,0 k halfpage
103 handbook, halfpage IR (µA)
(1)
MLC362
IF (mA) 10
102
10
(1) (2) (3) (4)
(2)
1
1
10 1
10-1
(3)
10 2
10-2
0
0.2
0.4
0.6
0.8 V F (V)
1.0
0
10
20
30
VR (V)
40
(1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (4) Tamb = -40 °C. (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C.
Fig.2
Forward current as a function of forward voltage; typical values.
Fig.3
Reverse current as a function of reverse voltage; typical values.
10 3 handbook, halfpage r diff () 102
MLC364
MLC363
handbook, halfpage
5 Cd (pF) 4
3
2
10
1
1 10 1
0
1
10
IF (mA)
10
2
0
10
20
30
VR (V)
40
f = 10 kHz.
f = 1 MHz; Tamb = 25 °C.
Fig.4
Differential forward resistance as a function of forward current; typical values.
Fig.5
Diode capacitance as a function of reverse voltage; typical values.
1999 Apr 26
4
Philips Semiconductors
Product specification
Schottky barrier double diode
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
1PS75SB45
SOT416
D
B
E
A
X
vMA
HE
3
Q
A
1
e1 e bp
2
wM B
A1 c
Lp detail X
0
0.5 scale
1 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.95 0.60 A1 max 0.1 bp 0.30 0.15 c 0.25 0.10 D 1.8 1.4 E 0.9 0.7 e 1 e1 0.5 HE 1.75 1.45 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2
OUTLINE VERSION SOT416
REFERENCES IEC JEDEC EIAJ SC-75
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Apr 26
5
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