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Details, datasheet, quote on part number:1PS76SB40
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| Part: | 1PS76SB40 |
| Category: | Discrete => Diodes & Rectifiers => Schottky Diodes |
| Description: | 1PS76SB40; Schottky Barrier Diode;; Package: SOD323 (UMD2, I-IEIA, URP) |
| Company: | Philips Semiconductors |
| Datasheet: | Download 1PS76SB40 datasheet File size : 64 kB |
| Request For quote: | Find where to buy 1PS76SB40
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D049
1PS76SB40 Schottky barrier diode
Product specification Supersedes data of 1998 Jul 16 1999 Apr 26
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES · Low forward voltage · Guard ring protected · Very small plastic SMD package · Low diode capacitance.
handbook, 4 columns
1PS76SB40
DESCRIPTION Planar Schottky barrier diode encapsulated in a SOD323 very small plastic SMD package.
APPLICATIONS · Ultra high-speed switching · Voltage clamping · Protection circuits · Blocking diodes.
Marking code: S4.
k
a
MAM283
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFRM IFSM Tstg Tj Tamb PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp 1 s; 0.5 tp < 10 ms CONDITIONS - - - - -65 - -65 MIN. MAX. 40 120 120 200 +150 150 +150 UNIT V mA mA mA °C °C °C
1999 Apr 26
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER continuous forward voltage CONDITIONS see Fig.2 IF = 1 mA IF = 10 mA IF = 40 mA IR Cd Note 1. Pulse test: tp = 300 µs; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD323 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS continuous reverse current diode capacitance VR = 30 V; note 1; see Fig.3 VR = 40 V; note 1; see Fig.3 VR = 0 ; f = 1 MHz; see Fig.5 380 500 1 1 10 5
1PS76SB40
MAX.
UNIT mV mV V µA µA pF
VALUE 450
UNIT K/W
1999 Apr 26
3
Philips Semiconductors
Product specification
Schottky barrier diode
GRAPHICAL DATA
1PS76SB40
2 handboo1,0 k halfpage
MLC361 - 1
103 handbook, halfpage IR (µA)
(1)
MLC362
IF (mA) 10
102
10
(1) (2) (3) (4)
(2)
1
1
10 1
10-1
(3)
10 2
10-2
0
0.2
0.4
0.6
0.8 V F (V)
1.0
0
10
20
30
VR (V)
40
(1) Tamb = 150 °C. (2) Tamb = 85 °C.
(3) Tamb = 25 °C. (4) Tamb = -40 °C.
(1) Tamb = 150 °C. (2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2
Forward current as a function of forward voltage; typical values.
Fig.3
Reverse current as a function of reverse voltage; typical values.
10 3 handbook, halfpage r diff () 102
MLC364
MLC363
handbook, halfpage
5 Cd (pF) 4
3
2
10
1
1 10 1
0
1
10
IF (mA)
10
2
0
10
20
30
VR (V)
40
f = 10 kHz.
f = 1 MHz; Tamb = 25 °C.
Fig.4
Differential forward resistance as a function of forward current; typical values.
Fig.5
Diode capacitance as a function of reverse voltage; typical values.
1999 Apr 26
4
Philips Semiconductors
Product specification
Schottky barrier diode
PACKAGE OUTLINE Plastic surface mounted package; 2 leads
1PS76SB40
SOD323
A A1
E
bp
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max. + 0.05 - 0.05 bp 0.40 0.25 c D
0.25 0.10
Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD323
,
Lp HE D 1 2
(1)
Q
c
vMA
A
0
1
2 mm
scale
E
HE
Lp
Q
v 0.2
1.8 1.6
1.35 1.15
2.7 2.3
0.45 0.15
0.25 0.15
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN PROJECTION
ISSUE DATE 98-09-14
1999 Apr 26
5
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