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Details, datasheet, quote on part number:1PS79SB30
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| Part: | 1PS79SB30 |
| Category: | Discrete => Diodes & Rectifiers => Schottky Diodes |
| Description: | 1PS79SB30; Schottky Barrier Diode;; Package: SOD523 (I-IGIA, UFP) |
| Company: | Philips Semiconductors |
| Datasheet: | Download 1PS79SB30 datasheet File size : 55 kB |
| Request For quote: | Find where to buy 1PS79SB30
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
1PS79SB30 Schottky barrier diode
Product specification 2001 Feb 20
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES · Very low forward voltage · Very low reverse current · Guard ring protected · Ultra small SMD package. APPLICATIONS · Ultra high-speed switching · Voltage clamping · Protection circuits · Blocking diodes · Low power consumption applications (e.g. hand-held applications).
Marking code: G1. Top view
MGU325
1PS79SB30
PINNING PIN 1 2 DESCRIPTION cathode anode
handbook, halfpage 1
2
DESCRIPTION Fig.1 Planar Schottky barrier diode encapsulated in a SC-79 (SOD523) ultra small SMD plastic package. Simplified outline (SC-79; SOD523) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF IFRM IFSM Tstg Tj Tamb PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp 1 s; 0.5 t = 8.3 ms half sinewave; JEDEC method CONDITIONS - - - - -65 - -65 MIN. MAX. 40 200 300 1 +150 150 +150 V mA mA A °C °C °C UNIT
2001 Feb 20
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS see Fig.2 IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 100 mA IF = 200 mA IR Cd Note 1. Pulse test: pulse width = 300 µs; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-79 (SOD523) standard mounting conditions. PARAMETER CONDITIONS VALUE 450 continuous reverse current diode capacitance VR = 25 V; note 1; see Fig.3 VR = 1 V; f = 1 MHz; see Fig.4 190 250 320 440 520 - - TYP.
1PS79SB30
MAX. 220 290 360 500 600 0.5 20
UNIT mV mV mV mV mV µA pF
UNIT K/W
thermal resistance from junction to ambient note 1
2001 Feb 20
3
Philips Semiconductors
Product specification
Schottky barrier diode
GRAPHICAL DATA
103 handbook, halfpage IF (mA) 102
MLD546
1PS79SB30
103 handbook, halfpage IR (µA) 102
(2) (1)
MLD547
10
10
(1)
(2)
(3)
1
1
(3)
10-1
0
0.4
0.8
VF (V)
1.2
10-1
0
10
20
30
VR (V)
40
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C.
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C.
Fig.2
Forward current as a function of forward voltage; typical values.
Fig.3
Reverse current as a function of reverse voltage; typical values.
handbook, halfpage
20 Cd
MLD548
(pF) 16
12
8
4
0 0 10 20 30 VR (V) 40
f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse voltage; typical values.
2001 Feb 20
4
Philips Semiconductors
Product specification
Schottky barrier diode
PACKAGE OUTLINE Plastic surface mounted package; 2 leads
1PS79SB30
SOD523
A c HE vMA
D
A
0
0.5 scale
1 mm
1 E bp
2
DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. The marking bar indicates the cathode. A 0.7 0.5 bp 0.35 0.25 c 0.2 0.1 D 1.3 1.1 E 0.9 0.7 HE 1.7 1.5 v 0.15
(1)
OUTLINE VERSION SOD523
REFERENCES IEC JEDEC EIAJ SC-79
EUROPEAN PROJECTION
ISSUE DATE 98-11-25
2001 Feb 20
5
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