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Details, datasheet, quote on part number:1PS79SB31
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| Part: | 1PS79SB31 |
| Category: | Discrete => Diodes & Rectifiers => Schottky Diodes |
| Description: | 1PS79SB31; Schottky Barrier Diode;; Package: SOD523 (I-IGIA, UFP) |
| Company: | Philips Semiconductors |
| Datasheet: | Download 1PS79SB31 datasheet File size : 55 kB |
| Request For quote: | Find where to buy 1PS79SB31
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
1PS79SB31 Schottky barrier diode
Product specification 2002 Jan 11
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES · Very low forward voltage · Guard ring protected · Ultra small SMD package. APPLICATIONS · Ultra high-speed switching · Voltage clamping · Protection circuits · Low current rectification · Low power consumption applications (e.g. hand-held devices). DESCRIPTION Planar Schottky barrier diode in a SOD523 (SC-79) ultra small SMD plastic package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF IFRM IFSM Tstg Tj Tamb PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp 1 s; 0.5 t = 8.3 ms half sine wave; JEDEC method CONDITIONS - - - - -65 - -65 MIN.
1PS79SB31
handbook, halfpage k
Marking code: G3.
The marking bar indicates the cathode.
Top view
a
MAM403
Fig.1
Simplified outline SOD523 (SC-79) and symbol.
MAX. 30 200 300 1 000 +150 125 +125 V
UNIT mA mA mA °C °C °C
2002 Jan 11
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS see Fig.2; IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 100 mA IF = 200 mA IR Cd Note 1. Pulse test: tp = 300 µs; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-79 (SOD523) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 450 continuous reverse current diode capacitance VR = 10 V; note 1; see Fig.3 VR = 1 V; f = 1 MHz; see Fig.4 130 190 255 355 420 2.5 20 MIN.
1PS79SB31
MAX. 190 250 300 410 500 30 25
UNIT mV mV mV mV mV µA pF
UNIT K/W
2002 Jan 11
3
Philips Semiconductors
Product specification
Schottky barrier diode
GRAPHICAL DATA
MGU517
1PS79SB31
103 handbook, halfpage IF (mA)
104 handbook, halfpage IR (µA)
(1)
MGU518
103
(2)
102
102
(1)
(2)
(3)
10
(3)
10
1
1
0
0.2
0.4
0.6
0.8 VF (V)
1
10-1
0
10
20
VR (V)
30
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C.
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C.
Fig.2
Forward current as a function of forward voltage; typical values.
Fig.3
Reverse current as a function of reverse voltage; typical values.
handbook, halfpage
40
MGU519
Cd (pF) 30
20
10
0 0 10 20 VR (V) 30
(1) f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse voltage; typical values.
2002 Jan 11
4
Philips Semiconductors
Product specification
Schottky barrier diode
PACKAGE OUTLINE Plastic surface mounted package; 2 leads
1PS79SB31
SOD523
A c HE vMA
D
A
0
0.5 scale
1 mm
1 E bp
2
DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. The marking bar indicates the cathode. A 0.7 0.5 bp 0.35 0.25 c 0.2 0.1 D 1.3 1.1 E 0.9 0.7 HE 1.7 1.5 v 0.15
(1)
OUTLINE VERSION SOD523
REFERENCES IEC JEDEC EIAJ SC-79
EUROPEAN PROJECTION
ISSUE DATE 98-11-25
2002 Jan 11
5
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