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Details, datasheet, quote on part number:1PS79SB62
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| Part: | 1PS79SB62 |
| Category: | Discrete => Diodes & Rectifiers => Schottky Diodes |
| Description: | 1PS79SB62; Schottky Barrier Diode;; Package: SOD523 (I-IGIA, UFP) |
| Company: | Philips Semiconductors |
| Datasheet: | Download 1PS79SB62 datasheet File size : 58 kB |
| Request For quote: | Find where to buy 1PS79SB62
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
1PS79SB62 Schottky barrier diode
Product specification 2001 Jan 18
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES · Ultra high switching speed · Very low capacitance · High breakdown voltage · Guard ring protected · Ultra small plastic SMD package. APPLICATIONS · Ultra high-speed switching · High frequency applications. DESCRIPTION Epitaxial Schottky barrier diode encapsulated in a SOD523 (SC-79) ultra small plastic SMD package. ESD sensitive device, observe handling precautions. PINNING
1PS79SB62
handbook, halfpage 1 k
Marking code: S9.
Fig.1
1 2
Top view
PIN
DESCRIPTION cathode anode
2 a
MAM403
Simplified outline (SOD523; SC-79) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF Tstg Tj Tamb continuous reverse voltage continuous forward current storage temperature junction temperature operating ambient temperature PARAMETER - - -65 - -65 MIN. MAX. 40 20 +150 125 +125 V mA °C °C °C UNIT
2001 Jan 18
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF IR Cd Note 1. Pulse test: pulse width = 300 µs; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD523 (SC-79) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS forward voltage reverse current diode capacitance PARAMETER CONDITIONS IF = 2 mA; see Fig.2; note 1 VR = 40 V; see Fig.3; note 1 VR = 0 V; f = 1 MHz; see Fig.4 1 0.6
1PS79SB62
MAX. 800
UNIT mV µA pF
VALUE 450
UNIT K/W
2001 Jan 18
3
Philips Semiconductors
Product specification
Schottky barrier diode
GRAPHICAL DATA
1PS79SB62
handbook, halfpage
10
MGT832
104 handbook, halfpage IR (nA)
(1)
MGT833
IF (mA) 1
103
102
(2)
10 10-1
(2) (1) (3)
1
(3)
10- 2 0 0.4 0.8 1.2 1.6 VF (V) (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. 2
10-1
0
10
20
30
VR (V)
40
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C.
Fig.2
Forward current as a function of forward voltage; typical values.
Fig.3
Reverse current as a function of reverse voltage; typical values.
MGT834
handbook, halfpage
0.42
Cd (pF)
0.38
0.34
0.30
0.26
0.22 0 10 20 30 V (V) 40 R
f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse voltage; typical values.
2001 Jan 18
4
Philips Semiconductors
Product specification
Schottky barrier diode
PACKAGE OUTLINE Plastic surface mounted package; 2 leads
1PS79SB62
SOD523
A c HE vMA
D
A
0
0.5 scale
1 mm
1 E bp
2
DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. The marking bar indicates the cathode. A 0.7 0.5 bp 0.35 0.25 c 0.2 0.1 D 1.3 1.1 E 0.9 0.7 HE 1.7 1.5 v 0.15
(1)
OUTLINE VERSION SOD523
REFERENCES IEC JEDEC EIAJ SC-79
EUROPEAN PROJECTION
ISSUE DATE 98-11-25
2001 Jan 18
5
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