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Details, datasheet, quote on part number:1PS79SB63
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| Part: | 1PS79SB63 |
| Category: | Discrete => Diodes & Rectifiers => Schottky Diodes |
| Description: | 1PS79SB63; Schottky Barrier Diode;; Package: SOD523 (I-IGIA, UFP) |
| Company: | Philips Semiconductors |
| Datasheet: | Download 1PS79SB63 datasheet File size : 51 kB |
| Request For quote: | Find where to buy 1PS79SB63
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
1PS79SB63 Schottky barrier diode
Product specification 2002 Apr 08
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES · Very low capacitance · Low forward voltage · Ultra small plastic SMD package. APPLICATIONS · High frequency detection · Ultra high-speed switching · Zero bias detection. DESCRIPTION Planar Schottky barrier diode encapsulated in a SOD523 (SC-79) ultra small plastic SMD package. ESD sensitive device, observe handling precautions.
handbook, halfpage 1
1PS79SB63
PINNING PIN 1 2 DESCRIPTION cathode anode
2
Top view Marking code: T1.
MGU325
The marking bar indicates the cathode.
Fig.1
Simplified outline (SOD523; SC-79) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF IFRM IFSM Tstg Tj Tamb PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. tp 1 ms; = 0.25 t = 8.3 ms half sine wave; JEDEC method CONDITIONS - - - - -65 - -65 MIN. 5 20 400 550 +150 125 +125 MAX. V mA mA mA °C °C °C UNIT
2002 Apr 08
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS see Fig.2 IF = 0.1 mA IF = 1 mA IR continuous reverse current see Fig.3 VR = 1 V VR = 5 V; note 1 Cd Ls Note 1. Pulse test: pulse width = 300 µs; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD523 (SC-79) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 450 diode capacitance series inductance VR = 0 V; f = 1 MHz; see Fig.4 0.4 - 0.35 0.6 160 240 TYP.
1PS79SB63
MAX. 200 300 1 50 0.5 -
UNIT mV mV µA µA pF nH
UNIT K/W
2002 Apr 08
3
Philips Semiconductors
Product specification
Schottky barrier diode
GRAPHICAL DATA
1PS79SB63
102 handbook, halfpage IF (mA) 10
MHC183
103 handbook, halfpage IR (µA) 102
(1)
MHC184
(2)
1
(1) (2) (3)
10
(3)
10-1
1
10-2
0
0.2
0.4
0.6
0.8 VF (V)
1
10-1
0
1
2
3
4 VR (V)
5
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C.
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C.
Fig.2
Forward current as a function of forward voltage; typical values.
Fig.3
Reverse current as a function of reverse voltage; typical values.
handbook, halfpage
0.38
MHC185
Cd (pF) 0.34
0.3
0.26
0.22 0 1 2 3 4 VR (V) 5
f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse voltage; typical values.
2002 Apr 08
4
Philips Semiconductors
Product specification
Schottky barrier diode
PACKAGE OUTLINE Plastic surface mounted package; 2 leads
1PS79SB63
SOD523
A c HE vMA
D
A
0
0.5 scale
1 mm
1 E bp
2
DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. The marking bar indicates the cathode. A 0.7 0.5 bp 0.35 0.25 c 0.2 0.1 D 1.3 1.1 E 0.9 0.7 HE 1.7 1.5 v 0.15
(1)
OUTLINE VERSION SOD523
REFERENCES IEC JEDEC EIAJ SC-79
EUROPEAN PROJECTION
ISSUE DATE 98-11-25
2002 Apr 08
5
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