|
Details, datasheet, quote on part number:1PS79SB70
| |
| Part: | 1PS79SB70 |
| Category: | Discrete => Diodes & Rectifiers => Schottky Diodes |
| Description: | 1PS79SB70; Schottky Barrier Diode;; Package: SOD523 (I-IGIA, UFP) |
| Company: | Philips Semiconductors |
| Datasheet: | Download 1PS79SB70 datasheet File size : 61 kB |
| Request For quote: | Find where to buy 1PS79SB70
|
| |
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
1PS79SB70 Schottky barrier diode
Product specification File under Discrete Semiconductors 1998 Jul 16
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES · Low forward voltage · High breakdown voltage · Guard ring protected · Ultra small plastic SMD package · Low capacitance. APPLICATIONS · Ultra high-speed switching · Voltage clamping · Protection circuits · Blocking diodes. DESCRIPTION
1PS79SB70
Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD package.
handbook, halfpage k
Marking code: G.
Top view
a
MAM403
Fig.1 Simplified outline (SC-79) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFRM IFSM Tstg Tj Tamb PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp 1 s; 0.5 tp < 10 ms CONDITIONS - - - - -65 - -65 MIN. MAX. 70 70 70 100 +150 150 +150 V mA mA mA °C °C °C UNIT
1998 Jul 16
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.2 IF = 1 mA IF = 10 mA IF = 15 mA IR Cd Note 1. Pulsed test: tp = 300 µs; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-79 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS reverse current diode capacitance VR = 50 V; note 1; see Fig.3 VR = 70 V; note 1; see Fig.3 f = 1 MHz; VR = 0; see Fig.5 CONDITIONS
1PS79SB70
MAX. 410 750 1 100 10 2
UNIT mV mV V nA µA pF
VALUE 450
UNIT K/W
1998 Jul 16
3
Philips Semiconductors
Product specification
Schottky barrier diode
GRAPHICAL DATA
1PS79SB70
10 2 IF (mA) 10
MRA803
10 2 IR (µA) 10 (1)
MRA805
1 1 10 1 10 1 (1) 10
2
(2)
(3) 10 (2) (3) (4) 10 3 0 20 40 60 VR (V) (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. 80
2
0
0.2
0.4
0.6
0.8 VF (V)
1
(1) Tamb = 125 °C. (2) Tamb = 85 °C.
(3) Tamb = 25 °C. (4) Tamb = -40 °C.
Fig.2
Forward current as a function of forward voltage; typical values.
Fig.3
Reverse current as a function of reverse voltage; typical values.
103 rdiff
MRA802
2 Cd (pF) 1.5
MRA804
102
1
10 0.5
1 10-1
0 1 10 IF (mA) 102 0 20 40 60 VR (V) 80
f = 10 kHz.
f = 1 MHz.
Fig.4
Differential forward resistance as a function of forward current; typical values.
Fig.5
Diode capacitance as a function of reverse voltage; typical values.
1998 Jul 16
4
Philips Semiconductors
Product specification
Schottky barrier diode
PACKAGE OUTLINE Plastic surface mounted package; 2 leads
1PS79SB70
SOD523
A c HE vMA
D
A
0
0.5 scale
1 mm
1 E bp
2
DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. The marking bar indicates the cathode. A 0.7 0.5 bp 0.35 0.25 c 0.2 0.1 D 1.3 1.1 E 0.9 0.7 HE 1.7 1.5 v 0.15
(1)
OUTLINE VERSION SOD523
REFERENCES IEC JEDEC EIAJ SC-79
EUROPEAN PROJECTION
ISSUE DATE 98-11-25
1998 Jul 16
5
|
|
