|
Details, datasheet, quote on part number:1PS89SB15
| |
| Part: | 1PS89SB15 |
| Category: | Discrete => Diodes & Rectifiers => Schottky Diodes |
| Description: | 1PS89SB14; 1PS89SB15; 1PS89SB16; Schottky Barrier Double Diodes;; Package: SOT490 (SC-89) |
| Company: | Philips Semiconductors |
| Datasheet: | Download 1PS89SB15 datasheet File size : 50 kB |
| Request For quote: | Find where to buy 1PS89SB15
|
| |
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
1PS89SB14; 1PS89SB15; 1PS89SB16 Schottky barrier double diodes
Product specification Supersedes data of 1998 Nov 10 2003 Apr 28
Philips Semiconductors
Product specification
Schottky barrier double diodes
FEATURES · Power dissipation comparable to SOT23 · Low forward voltage · Guard ring protected · Ultra small SMD package. APPLICATIONS · Ultra high speed switching · Voltage clamping · Protection circuits · Blocking diodes. DESCRIPTION Planar Schottky barrier double diodes encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. MARKING TYPE NUMBER 1PS89SB14 1PS89SB15 1PS89SB16 MARKING CODE 44 43 45
1 Top view 2
MBK837
1PS89SB14; 1PS89SB15; 1PS89SB16
PINNING 1PS89SBxx PIN 14 1 2 3 a1 k2 k1, a2 15 a1 a2 k1, k2 16 k1 k2 a1, a2 Fig.2
1 2
MLC358
3
1PS89SB14 diode configuration (symbol).
3
fpage
3 1 2
MLC359
Fig.3
1PS89SB15 diode configuration (symbol).
Fig.1
Simplified outline (SC-89; SOT490) and pin configuration. Fig.4
3 1 2
MLC360
1PS89SB16 diode configuration (symbol).
2003 Apr 28
2
Philips Semiconductors
Product specification
Schottky barrier double diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER
1PS89SB14; 1PS89SB15; 1PS89SB16
CONDITIONS - - tp 1 s; 0.5 tp < 10 ms Tamb 25 °C - - -
MIN.
MAX.
UNIT
Per diode unless otherwise specified VR IF IFRM IFSM Ptot Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation (per package) storage temperature junction temperature operating ambient temperature 30 200 300 600 200 +150 125 +125 V mA mA mA mW °C °C °C
-65 - -65
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode unless otherwise specified VF forward voltage see Fig.5 IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR Cd Note 1. Pulse test: tp 300 µs; 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-89 (SOT490) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 500 UNIT K/W reverse current diode capacitance VR = 25 V; note 1; see Fig.6 f = 1 MHz; VR = 1 V; see Fig.7 240 320 400 500 800 2 10 mV mV mV mV mV µA pF
2003 Apr 28
3
Philips Semiconductors
Product specification
Schottky barrier double diodes
GRAPHICAL DATA
1PS89SB14; 1PS89SB15; 1PS89SB16
MSA892
3 handboo1,0 k halfpage
103 IR (µA) 102
(2) (1)
MGL495
IF (mA) 10
2
(1) (2) (3)
10
10
1
(1)
(2)
(3)
1
(3)
10 1
10-1
0 0.4 0.8 VF (V) 1.2
0 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C.
10
20
VR (V)
30
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C.
Fig.5
Forward current as a function of forward voltage; typical values.
Fig.6
Reverse current as a function of reverse voltage; typical values.
15 Cd (pF) 10
MGL496
5
0
0
10
20
VR (V)
30
f = 1 MHz; Tamb = 25 °C.
Fig.7
Diode capacitance as a function of reverse voltage; typical values.
2003 Apr 28
4
Philips Semiconductors
Product specification
Schottky barrier double diodes
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
1PS89SB14; 1PS89SB15; 1PS89SB16
SOT490
D
B
E
A
X
HE
vMA
3
A
1
e1 e bp
2
wMB Lp detail X
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.8 0.6 bp 0.33 0.23 c 0.2 0.1 D 1.7 1.5 E 0.95 0.75 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.5 0.3 v 0.1 w 0.1
OUTLINE VERSION SOT490
REFERENCES IEC JEDEC EIAJ SC-89
EUROPEAN PROJECTION
ISSUE DATE 98-10-23
2003 Apr 28
5
|
|
