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Details, datasheet, quote on part number:1PS89SB74
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| Part: | 1PS89SB74 |
| Category: | Discrete => Diodes & Rectifiers => Schottky Diodes |
| Description: | 1PS89SB74; Schottky Barrier Double Diode;; Package: SOT490 (SC-89) |
| Company: | Philips Semiconductors |
| Datasheet: | Download 1PS89SB74 datasheet File size : 57 kB |
| Request For quote: | Find where to buy 1PS89SB74
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
1PS89SB74 Schottky barrier double diode
Product specification 2001 Apr 20
Philips Semiconductors
Product specification
Schottky barrier double diode
FEATURES · Low forward voltage · High breakdown voltage · Guard ring protected · Ultra small plastic SMD package · Low capacitance. APPLICATIONS · Ultra high-speed switching · Voltage clamping · Protection circuits · Blocking diodes. DESCRIPTION Planar Schottky barrier diode encapsulated in a SOT490 (SC-89) ultra small plastic SMD package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS
1 Top view Marking code: S7. 2
MBK837
1PS89SB74
PINNING PIN 1 2 3 DESCRIPTION anode (a1) cathode (k2) common (k1, a2)
fpage
3 3 1 2
MLC358
Fig.1
Simplified outline (SOT490; SC-89) and symbol.
MIN. - -
MAX.
UNIT
Per diode unless otherwise specified VR IF IFRM IFSM Ptot Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation (per package) storage temperature junction temperature operating ambient temperature tp 1 s; 0.5 tp < 10 ms Tamb 25 °C 70 70 70 100 200 +150 +150 +150 V mA mA mA mW °C °C °C
- - - -65 - -65
2001 Apr 20
2
Philips Semiconductors
Product specification
Schottky barrier double diode
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per diode VF continuous forward voltage see Fig.2; IF = 1 mA IF = 10 mA IF = 15 mA IR Cd Note 1. Pulse test: tp 300 µs; 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT490 (SC-89) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS continuous reverse current diode capacitance VR = 50 V; see Fig.3; note 1 VR = 70 V; see Fig.3; note 1 VR = 0; f = 1 MHz; see Fig.4 PARAMETER CONDITIONS
1PS89SB74
MAX.
UNIT
410 750 1 100 10 2
mV mV V nA µA pF
VALUE 500
UNIT K/W
2001 Apr 20
3
Philips Semiconductors
Product specification
Schottky barrier double diode
GRAPHICAL DATA
MRA803
1PS89SB74
10 2 IF (mA) 10
10 2 IR (µA) 10 (1)
MRA805
1 1 10 1
(2)
(3) 10 1 (1) 10
2
10 2 (2) (3) (4) 10 3 0 0.2 0.4 0.6 0.8 VF (V) (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. 1 0 20 40 60 VR (V) 80
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (4) Tamb = -40 °C.
Fig.2
Forward current as a function of forward voltage; typical values.
Fig.3
Reverse current as a function of reverse voltage; typical values.
2 Cd (pF) 1.5
MRA804
1
0.5
0 0 20 40 60 VR (V) 80
f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse voltage; typical values.
2001 Apr 20
4
Philips Semiconductors
Product specification
Schottky barrier double diode
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
1PS89SB74
SOT490
D
B
E
A
X
HE
vMA
3
A
1
e1 e bp
2
wMB Lp detail X
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.8 0.6 bp 0.33 0.23 c 0.2 0.1 D 1.7 1.5 E 0.95 0.75 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.5 0.3 v 0.1 w 0.1
OUTLINE VERSION SOT490
REFERENCES IEC JEDEC EIAJ SC-89
EUROPEAN PROJECTION
ISSUE DATE 98-10-23
2001 Apr 20
5
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