|
Details, datasheet, quote on part number:1PS89SS06
| |
| Part: | 1PS89SS06 |
| Category: | Discrete => Diodes & Rectifiers => Switching Diodes |
| Description: | 1PS89SS04; 1PS89SS05; 1PS89SS06; High-speed Double Diodes;; Package: SOT490 (SC-89) |
| Company: | Philips Semiconductors |
| Datasheet: | Download 1PS89SS06 datasheet File size : 68 kB |
| Request For quote: | Find where to buy 1PS89SS06
|
| |
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
1PS89SS04; 1PS89SS05; 1PS89SS06 High-speed double diodes
Product specification Supersedes data of 1999 June 08 2001 Jan 09
Philips Semiconductors
Product specification
High-speed double diodes
FEATURES · Power dissipation comparable to SOT23 · Ultra small plastic SMD package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 80 V · Repetitive peak reverse voltage: max. 85 V · Repetitive peak forward current: max. 500 mA. APPLICATIONS · High speed switching in e.g. surface mounted circuits. Fig.1 DESCRIPTION Two high-speed switching diodes in planar technology, with different configurations, in an ultra small SC-89 (SOT490) SMD plastic package.
fpage
1PS89SS04; 1PS89SS05; 1PS89SS06
PINNING 1PS89SS.. PIN 04 1 2 3 a1 k2 k1, a2 05 a1 a2 k1, k2 06 k1 k2 a1, a2 Fig.2
1 2
MGL550
3
1PS89SS04 diode configuration (symbol).
3 3 1 1 Top view 2
MBK837 MGL551
2
Simplified outline (SC-89; SOT490) and pin configuration.
Fig.3
1PS89SS05 diode configuration (symbol).
MARKING TYPE NUMBER 1PS89SS04 1PS89SS05 1PS89SS06 MARKING CODE S4 S5 S6 Fig.4
1
3 2
MGL552
1PS89SS06 diode configuration (symbol).
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS - - Tamb = 25 °C; note 1; see Fig.5 single diode loaded both diodes loaded IFRM IFSM repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.7 t = 1 µs t=1s - - 4 0.5 A A - - - 200 125 500 mA mA mA MIN. MAX. UNIT
Per diode unless otherwise specified VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current 85 80 V V
2001 Jan 09
2
Philips Semiconductors
Product specification
High-speed double diodes
1PS89SS04; 1PS89SS05; 1PS89SS06
SYMBOL Ptot Tstg Tj Note
PARAMETER storage temperature junction temperature
CONDITIONS -
MIN. -65 -
MAX. 250 +150 +150
UNIT mW °C °C
total power dissipation (per package) Tamb 25 °C; note 1
1. Refer to SC-89 (SOT490) standard mounting conditions. ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.6 IF = 1 mA IF = 10 mA IF = 50 mA IF = 100 mA IR reverse current see Fig.8 VR = 25 V VR = 80 V VR = 25 V; Tj = 150 °C VR = 80 V; Tj = 150 °C Cd diode capacitance 1PS89SS04 1PS89SS05 1PS89SS06 trr reverse recovery time switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.10 switched to IF = 10 mA; tr = 20 ns; see Fig.11 f = 1 MHz; VR = 0; see Fig.9 - - - - 1.5 1.5 2 4 pF pF pF ns - - - - 30 0.5 30 100 nA µA µA µA 610 740 - - - - 1 1.2 mV mV V V PARAMETER CONDITIONS TYP. MAX. UNIT
Vfr
forward recovery voltage
-
1.75
V
THERMAL CHARACTERISTICS SYMBOL Rth j-s 1PS89SS04 1PS89SS05 1PS89SS06 Rth j-a Note 1. Refer to SC-89 (SOT490) standard mounting conditions. thermal resistance from junction to ambient note 1 PARAMETER CONDITIONS VALUE 55 70 70 500 UNIT K/W K/W K/W K/W
thermal resistance from junction to soldering point both diodes loaded
2001 Jan 09
3
Philips Semiconductors
Product specification
High-speed double diodes
GRAPHICAL DATA
1PS89SS04; 1PS89SS05; 1PS89SS06
handbook, halfpage
300
MGL553
handbook, halfpage
300
MBG382
IF (mA)
(1)
IF (mA)
(1) (2) (3)
200
200
(2)
100
100
0 0 50 100 200 150 Tamb (°C)
0
0
1
VF (V)
2
(1) One diode loaded. (2) Both diodes loaded.
(1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values.
Fig.5
Maximum permissible continuous forward current as a function of the ambient temperature.
Fig.6
Forward current as a function of forward voltage.
102 handbook, full pagewidth IFSM (A)
MBG704
10
1
10-1 1 Based on square wave currents. Tj = 25 °C prior to surge. 10
102
103
tp (µs)
104
Fig.7 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2001 Jan 09
4
Philips Semiconductors
Product specification
High-speed double diodes
1PS89SS04; 1PS89SS05; 1PS89SS06
105 handbook, halfpage IR (nA) 104 VR = 80 V
MBL045
handbook, halfpage
2.0
MGL554
Cd (pF) 1.5
103 max
80 V
25 V
1.0
(1)
102
0.5
(2)
typ 10 0 100 Tj (°C) 200 0 0 5 10 15 20 VR (V) f = 1 MHz; Tj = 25 °C. (1) 1PS89SS06. (2) 1PS89SS04 and 1PS89SS05. 25
Fig.8
Reverse current as a function of junction temperature.
Fig.9
Diode capacitance as a function of reverse voltage; typical values.
2001 Jan 09
5
|
|
