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Details, datasheet, quote on part number:1U5GHZLN
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Datasheet text preview:
Philips Semiconductors B.V.
Gerstweg 2, 6534 AE Nijmegen, The Netherlands
Re p o rt nr. A u th o r Date De p artme n t
: RNR-T45-97-B-0584 : T.F. Buss : 16-07-97 : P.G. Transistors & Diodes, Development
1.5G Hz LOW NOISE AMPLIFIER WITH THE BFG425W
Abs trac t: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly RF-transistor. The LNA is designed for a frequency f=1.5GHz, VSUP~3.8V, ISUP=5mA. Measured performance at f=1.5GHz: Noise Figure NF~1.6dB, rf-Gain S21 ~14dB. Applications: · Global Positioning Systems (GPS) · Satellite Terminals.
Appe ndix I: 1.5GHz LNA circuit Appe ndix II: Printlayout and list of used components & materials Appe ndix III: Results of simulations and measurements
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Philips Semiconductors B.V.
Introduc tion: With the new Philips silicon bipolar double poly BFG400W series, it is possible to design low noise amplifiers for high frequency applications with a low current and a low supply voltage. These amplifiers are well suited for the new generation low voltage high frequency wireless applications. In this note an example of such an amplifier will be given. This amplifier is designed for a working frequency of 1.5GHz.
De s igning the circuit: Th e circuit is designed to show the following performance (target): tran sisto r: BFG425W V ce=3 V , Ic=5 mA , V SUP~3 .7 V fre q =1.5 GHz Gain ~14 d B NF<=1 .6 d B V S WRi<1 :2 V S WRo <1 :2 Th e in- and outputmatching is realised with a LC-combination. Also extra emitter-inductance on both emitterle ad s (µ-strips) are used to improve the matching and the Noise Figure. De s igning the layout: A lay-out has been designed with HP-MDS. Appendix II contains the printlayout. M e a s ure me nts : S imu latio n s (with realistic RF-models of al used parts) and measurements of the total circuit (e p o xy PCB) are done (Appendix III).
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Philips Semiconductors B.V. Appendix I: Schematic of the circuit
C3 R1
C4
+VSUP C2 Coil_1 R2 OUT 50 IN 50 C1 BFG425W µS4: µS4 µS4 D1 L1 L2 L3 W2 Figure 1: LNA circuit 1 .5 GHz LNA Component list: 1.5GHz LNA Component list: Co mp o ne n t V alu e P u rp o se , comment R1 3 3 k B ias (coll.-base) R2 10 in series with coll. for better S22, stability and reducing gain. R3 22 RF blocking R4 100 B ias, series with coll., cancelling hFE spread C1 3 .3 pF In p u t match (input to base) C2 8 .2 pF 1 .5 GHz short (L1 to ground) C3 8 .2 pF 1 .5 GHz short (L2 to ground) C4 1 nF RF decoupling collector bias C5 8 2 pF Ou tp u t match (collector to output) C6 1 pF Ou tp u t match, stability (collector to emitter) Co il_ 1 8 .2 nH In p u t match (base-bias) Co il_ 2 8 .2 nH Ou tp u t match (collector-bias) µs4 (se e next µ-strip lin e Emitter-induction tab le ) C5 C6 W1 R3 Coil_2 R4
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Philips Semiconductors B.V.
µS 4 Emitter inductance of µ-stripline and via-hole (see on former page: Schematic of the circuit): Name Dime n sio n De scrip tio n 2 . 5 mm L1 le n g th µ-stripline; Z0~4 8 (PCB: r ~4.6, H=0 .5 mm) L2 1 .0 mm le n g th interconnect stripline and via-hole area L3 1 .0 mm le n g th via-hole area W1 0 .5 mm wid th µ-stripline W2 1 .0 mm wid th via-hole area D1 0 .4 mm d iame te r of via-hole
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Philips Semiconductors B.V. Appendix II: Printlayout and list of used components & materials
RFin
C1 C6 L1 R2 C5 RFout
C2
Vsup R4
C4
R1
L2
R3
C3
1.5GHz LOW NOISE AMP.
Fig u re 2: Printlayout
1 .5 GHz LNA Component list: Co mp o ne n t: P CB R1 R2 R3 R4 C1 C2 C3 C4 C5 C6 L1 L2 V alu e : FR4 : r ~4.6 3 3 k 10 22 100 3 .3 pF 8 .2 pF 8 .2 pF 1 nF 8 2 pF 1 pF 8 .2 nH 8 .2 nH size : H=0 .5 mm 0 6 0 3 Philips 0 6 0 3 Philips 0 6 0 3 Philips 0 6 0 3 Philips 0 6 0 3 Philips NPO 0 6 0 3 Philips NPO 0 6 0 3 Philips NPO 0 8 0 5 Philips 0 6 0 3 Philips NPO 0 6 0 3 Philips NPO 0 8 0 5 CS Coilcraft 0 8 0 5 CS Coilcraft
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