Details, datasheet, quote on part number: 2N5064
Part2N5064
CategoryDiscrete => Thyristors => PCT (Phase Control Thyristors)
Description2N5064; Thyristor Sensitive Gate
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload 2N5064 datasheet
Cross ref.Similar parts: P0102DA 1AA3, P0102DA 2AL3, P0102DA 5AL3, 2N5061, 2N5062, 2N5064RLRA, 2N5064RLRM, 48-84755H0, ECG540, N203
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Features, Applications

Glass passivated sensitive gate thyristor in a plastic envelope, intended for use in general purpose switching and phase control applications. This device is intended to be interfaced directly to microcontrollers, logic integreated circuits and other low power gate trigger circuits.

SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. UNIT

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave 102 C all conduction angles half sine wave; 25 C prior to surge; = 25C, over any 16 ms period -65 MAX. UNIT A2s C VDRM, VRRM Repetitive peak off-state voltages IT(AV) Average on-state current IT(RMS) ITRM ITSM I2t IGM VGM VRGM PGM PG(AV) Tstg Tj RMS on-state current Repetitive peak on-state current Non-repetitive peak on-state current I2t for fusing Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature

SYMBOL Rth j-c Rth j-a PARAMETER Thermal resistance junction to case Thermal resistance junction to ambient CONDITIONS see note:

= 25 C, RGK 1 k unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS VD = VDRM(max); 100 ; gate open circuit 12 V; RGK 12 V; RGK 1.2 A peak; = 300 s; VD = VDRM(max); 100 ; gate open circuit VD = VDRM(max); VR = VRRM(max) 125 C MIN. 0.1 TYP. MAX. UNIT A mA

Latching current Holding current On-state voltage Gate trigger voltage

= 25 C, RGK 1 k unless otherwise stated SYMBOL dVD/dt tgt tq PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); = 125 C; exponential waveform; RGK 1 k ITM VD = VDRM(max); = 10 mA; dIG/dt = 0.1 A/s VDM = 67% VDRM(max); = 125 C; ITM 35 V; dITM/dt = 30 A/s; dVD/dt = 2 V/s; RGK 1 k MIN. TYP. 2 100 MAX. UNIT V/s s

1 This measurement is made with the case mounted "flat side down" on a heatsink and held in position by means of a metal clamp over the curved surface. October 1997 2 Rev 1.200


 

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