Digchip : Database on electronics components
Electronics components database



Details, datasheet, quote on part number: 2N5087
 
 
Part number2N5087
CategoryDiscrete => Transistors => Bipolar => General Purpose => PNP
Description2N5087; PNP General Purpose Transistor
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload 2N5087 datasheet
Request For QuoteFind where to buy 2N5087
 


 
Specifications, Features, Applications

Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02

FEATURES· Low current (max. 100 mA)· Low voltage (max. 50 V). APPLICATIONS· Low noise stages in audio equipment. DESCRIPTION PNP transistor TO-92; SOT54 plastic package NPN complement: 2N5088.

QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb = -1 mA; VCE = -500 µA; VCE = 100 MHz open emitter open base CONDITIONS MIN. MAX. MHz mA mW UNIT

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted an FR4 printed-circuit board. CHARACTERISTICS 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS = 0; VCB = 0; VCB = 0; VEB = -100 µA; VCE = -1 mA; VCE = -10 mA; VCE -5 V VCEsat VBE fT F collector-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure = -10 mA; = -1 mA; VCE = 0; VCB = 100 kHz = 0; VEB = -500 mV; = 1 MHz = -200 µA; VCE to 15.7 kHz = -200 µA; VCE = 1 kHz; Hz 1997 Jul 02 3 MIN. TYP. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 250 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 CONDITIONS open emitter open base open collector MIN.




Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
2N5088 2N5088; NPN General Purpose Transistor
2N5400 Small-signal Transistors
2N5401 2N5401; PNP High-voltage Transistor;; Package: SOT54 (SPT, E-1)
2N5415 2N5415; 2N5416; PNP High-voltage Transistors
2N5484 N-channel Field-effect Transistor
2N5485
2N5486
2N5550 2N5550; 2N5551; NPN High-voltage Transistors;; Package: SOT54 (SPT, E-1)
2N6427 Small-signal Transistors
2N7000 2N7000; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT54 (SPT, E-1)
2N7002 2N7002; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT23 (SST3)
2N7002E 2N7002E; Trenchmos (tm) Logic Level FET;; Package: SOT23 (SST3)
2N7002F 2N7002F; Trenchmos (tm) Logic Level FET;; Package: SOT23 (SST3)
2N7002K Trenchmos (tm) Logic Level Fet
2N7002LT1 N-channel Enhancement Mode Field-effect Transistor
2PA1015 2PA1015; PNP General Purpose Transistor
2PA1015BL PNP General Purpose Low-power Transistors
2PA1015GR 2PA1015; PNP General Purpose Transistor;; Package: SOT54 (SPT, E-1)
2PA1015L 2PA1015; PNP General Purpose Transistor
2PA1015Y 2PA1015; PNP General Purpose Transistor;; Package: SOT54 (SPT, E-1)
2PA1576 2PA1576; PNP General Purpose Transistor