Details, datasheet, quote on part number: 2N5087
Part2N5087
CategoryDiscrete => Transistors => Bipolar => General Purpose => PNP
Description2N5087; PNP General Purpose Transistor
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload 2N5087 datasheet
Cross ref.Similar parts: 2N3906, 2N5086, 2N5087RLRA, 2N5227, 48-13444, A5T2604, A5T2605, A5T4058, A5T5086, A8T4058
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Features, Applications

Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02

FEATURES Low current (max. 100 mA) Low voltage (max. 50 V). APPLICATIONS Low noise stages in audio equipment. DESCRIPTION PNP transistor TO-92; SOT54 plastic package NPN complement: 2N5088.

QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb = -1 mA; VCE = -500 A; VCE = 100 MHz open emitter open base CONDITIONS MIN. MAX. MHz mA mW UNIT

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted an FR4 printed-circuit board. CHARACTERISTICS 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS = 0; VCB = 0; VCB = 0; VEB = -100 A; VCE = -1 mA; VCE = -10 mA; VCE -5 V VCEsat VBE fT F collector-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure = -10 mA; = -1 mA; VCE = 0; VCB = 100 kHz = 0; VEB = -500 mV; = 1 MHz = -200 A; VCE to 15.7 kHz = -200 A; VCE = 1 kHz; Hz 1997 Jul 02 3 MIN. TYP. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 250 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector MIN.


 

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