Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 1997 Sep 03

FEATURES· Low current (max. 100 mA)· Low voltage (max. 30 V). APPLICATIONS· Low noise stages in audio equipment. DESCRIPTION NPN transistor TO-92; SOT54 plastic package. PNP complement: 2N5087.

QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT F PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency noise figure Tamb = 1 mA; VCE = 500 µA; VCE = 100 MHz = 200 µA; VCE to 15.7 kHz open emitter open base CONDITIONS MIN. MAX. MHz mA mW UNIT

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted an FR4 printed-circuit board. CHARACTERISTICS 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS = 0; VCB = 0; VEB = 100 µA; VCE = 1 mA; VCE = 10 mA; VCE 5 V VCEsat VBE fT F collector-emitter saturation voltage = 10 mA; 1 mA base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure = 10 mA; VCE = 0; VCB = 1 MHz = 0; VEB = 1 MHz = 500 µA; VCE = 100 MHz = 200 µA; VCE to 15.7 kHz MIN. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 250 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 open base open collector CONDITIONS open emitter MIN.