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Part: 2N5416
Category:
Discrete
-> Transistors
-> Bipolar
-> Switching
-> PNP
Description: 2N5415; 2N5416; PNP High-voltage Transistors
Company: Philips Semiconductors
Datasheet: Download 2N5416 datasheet File size : 66 kB
Request For quote: Find where to buy 2N5416
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N5415; 2N5416 PNP high-voltage transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 21
Philips Semiconductors
Product specification
PNP high-voltage transistors
FEATURES · Low current (max. 200 mA) · High voltage (max. 300 V). APPLICATIONS · Switching and linear amplification in military, industrial and consumer equipment.
1 handbook, halfpage
2N5415; 2N5416
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION
DESCRIPTION PNP high-voltage transistor in a TO-39 metal package.
3
2 2
3
MAM334
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage 2N5415 2N5416 VCEO collector-emitter voltage 2N5415 2N5416 ICM Ptot hFE peak collector current total power dissipation DC current gain 2N5415 2N5416 fT transition frequency IC = -10 mA; VCE = -10 V; f = 5 MHz Tamb 50 °C IC = -50 mA; VCE = -10 V 30 30 15 150 120 - MHz open base - - - - -200 -300 400 1 V V mA W open emitter - - -200 -350 V V CONDITIONS MIN. MAX. UNIT
1997 May 21
2
Philips Semiconductors
Product specification
PNP high-voltage transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO 2N5415 2N5416 VCEO collector-emitter voltage 2N5415 2N5416 VEBO emitter-base voltage 2N5415 2N5416 IC ICM IBM Ptot Tstg Tj Tamb collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 50 °C Tcase 25 °C open collector - - - - - - - open base - - PARAMETER collector-base voltage CONDITIONS open emitter - -
2N5415; 2N5416
MIN.
MAX. -200 -350 -200 -300 -4 -6 -200 -400 -200 1 10 +200 200 +150 V V V V V V
UNIT
mA mA mA W W °C °C °C
-65 - -65
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 150 17.5 UNIT K/W K/W
1997 May 21
3
Philips Semiconductors
Product specification
PNP high-voltage transistors
CHARACTERISTICS Tcase = 25 °C unless otherwise specified. SYMBOL ICBO 2N5415 2N5416 IEBO emitter cut-off current 2N5415 2N5416 hFE DC current gain 2N5415 2N5416 VCEsat Cc Ce fT collector-emitter saturation voltage IC = -50 mA; IB = -5 mA collector capacitance emitter capacitance transition frequency IE = ie = 0; VCB = -10 V; f = 1 MHz IC = ic = 0; VEB = -6 V; f = 1 MHz IC = 0; VEB = -4 V IC = 0; VEB = -6 V IC = -50 mA; VCE = -10 V - - PARAMETER collector cut-off current IE = 0; VCB = -175 V IE = 0; VCB = -280 V - - CONDITIONS
2N5415; 2N5416
MIN.
MAX. -50 -50 -20 -20 150 120 -500 15 75 -
UNIT µA µA µA µA
30 30 - - -
mV pF pF MHz
IC = -10 mA; VCE = -10 V; f = 5 MHz 15
1997 May 21
4
Philips Semiconductors
Product specification
PNP high-voltage transistors
PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads
2N5415; 2N5416
SOT5/11
j B
seating plane wM AMBM
1
b
k
2 3
D1
a A D A L
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 6.60 6.35 a 5.08 b D D1 j k L 14.2 12.7 w 0.2 45°
0.48 9.39 8.33 0.85 0.95 0.41 9.08 8.18 0.75 0.75
OUTLINE VERSION SOT5/11
REFERENCES IEC JEDEC TO-39 EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-11
1997 May 21
5
Others parts begin by 2n
2N-1 2N-2 2N-3 2N-4 2N-5 2N-6 2N-7 2N-8 2N-9 2N-10 2N-11 2N-12 2N-13 2N-14 2N-15 2N-16 2N-17 2N-18 2N-19 2N-20 2N-21 2N-22 2N-23 2N-24 2N-25 2N-26 2N-27 2N-28 2N-29 2N-30 2N-31
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