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Details, datasheet, quote on part number:2N5551
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| Part: | 2N5551 |
| Category: | Discrete => Transistors => Bipolar => High Voltage |
| Description: | 2N5550; 2N5551; NPN High-voltage Transistors;; Package: SOT54 (SPT, E-1) |
| Company: | Philips Semiconductors |
| Datasheet: | Download 2N5551 datasheet File size : 51 kB |
| Request For quote: | Find where to buy 2N5551
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N5550; 2N5551 NPN high-voltage transistors
Product specification Supersedes data of 1997 Apr 09 1999 Apr 23
Philips Semiconductors
Product specification
NPN high-voltage transistors
FEATURES · Low current (max. 300 mA) · High voltage (max. 160 V). APPLICATIONS · Switching and amplification in high voltage applications such as telephony.
1 handbook, halfpage
2N5550; 2N5551
PINNING PIN 1 2 3 collector base emitter DESCRIPTION
DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401.
2 3
1 2 3
MAM279
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO 2N5550 2N5551 VCEO collector-emitter voltage 2N5550 2N5551 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C open collector open base - - - - - - - -65 - -65 140 160 6 300 600 100 630 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter - - 160 180 V V MIN. MAX. UNIT
1999 Apr 23
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient
2N5550; 2N5551
VALUE 200
UNIT K/W
CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO 2N5550 collector cut-off current 2N5551 IEBO hFE emitter cut-off current DC current gain 2N5550 2N5551 DC current gain 2N5550 2N5551 DC current gain 2N5550 2N5551 VCEsat collector-emitter saturation voltage collector-emitter saturation voltage 2N5550 2N5551 VBEsat Cc Ce fT F base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure 2N5550 2N5551 IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 k; f = 10 Hz to 15.7 kHz IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA - - - - - - 100 - - 250 200 1 1 6 30 300 10 8 mV mV V V pF pF MHz dB dB IC = 50 mA; VCE = 5 V; see Fig.2 20 30 - - - 150 mV IC = 10 mA; VCE = 5 V; see Fig.2 60 80 250 250 IE = 0; VCB = 120 V IE = 0; VCB = 120 V; Tamb = 100 °C IC = 0; VEB = 4 V IC = 1 mA; VCE = 5 V; see Fig.2 60 80 - - - - - 50 50 50 nA µA nA PARAMETER collector cut-off current IE = 0; VCB = 100 V IE = 0; VCB = 100 V; Tamb = 100 °C - - 100 100 nA µA CONDITIONS MIN. MAX. UNIT
1999 Apr 23
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
2N5550; 2N5551
handbook, full pagewidth
160
MGD814
hFE
120 VCE = 5 V
80
40
0 10-1
1
10
102 IC mA
103
Fig.2 DC current gain; typical values.
1999 Apr 23
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads
2N5550; 2N5551
SOT54
c
E d A L b
1
D
2
e1 e
3
b1
L1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5
1999 Apr 23
5
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