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Part: 2N7002LT1
Category:
Description: N-channel Enhancement Mode Field-effect Transistor
Company: Philips Semiconductors
Datasheet: Download 2N7002LT1 datasheet File size : 62 kB
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2N7002
N-channel enhancement mode field-effect transistor
Rev. 03 -- 27 July 2000 Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: 2N7002 in SOT23.
2. Features
s s s s TrenchMOSTM technology Ver y fast switching Logic level compatible Subminiature surface mount package.
3. Applications
s Relay driver s High speed line driver s Logic level translator.
c c
4. Pinning information
Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g)
3
Simplified outline
Symbol
d
source (s) drain (d)
g
03ab44
1
2
s
03ab30
SOT23
N-channel MOSFET
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
2N7002
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 °C Tsp = 25 °C; VGS = 10 V Tsp = 25 °C VGS = 10 V; ID = 500 mA VGS = 4.5 V; ID = 75 mA Typ - - - - 2.8 3.8 Max 60 300 0.83 150 5 5.3 Unit V mA W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) peak gate-source voltage drain current (DC) tp 50 µs; pulsed; duty cycle = 25% Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 Tsp = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IS ISM peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) peak source (diode forward) current Tsp = 25 °C Tsp = 25 °C; pulsed; tp 10 µs Tsp = 25 °C; pulsed; tp 10 µs; Figure 3 Tsp = 25 °C; Figure 1 Conditions Tj = 25 to 150 °C Tj = 25 to 150 °C; RGS = 20 k Min - - - - - - - - -65 -65 - - Max 60 60 ±30 ±40 300 190 1.2 0.83 +150 +150 300 1.2 Unit V V V V mA mA A W °C °C mA A
Source-drain diode
9397 750 07319
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 -- 27 July 2000
2 of 13
Philips Semiconductors
2N7002
N-channel enhancement mode field-effect transistor
03aa17
120
P der (%) 100
03aa25
120
Ider (%) 100
80
80
60
60
40
40
20
20
0 0 25 50 75 100 125
Tsp
0
150 o ( C)
175
0
25
50
75
100
125
150 175 Tsp (oC)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
VGS 4.5 V ID I d e r = ------------------ × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of solder point temperature.
10 ID (A)
Fig 2. Normalized continuous drain current as a function of solder point temperature.
03aa03
Tsp = 25oC tp = 10 µs
1
RDSon = VDS/ ID 100 µs
tp T
1 ms 10 ms D.C.
10-1
P
=
tp T
t
100 ms
10-2 1 10 VDS (V) 102
Tsp = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07319
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 -- 27 July 2000
3 of 13
Philips Semiconductors
2N7002
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Symbol Rth(j-sp) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to solder point thermal resistance from junction to ambient Conditions mounted on a metal clad substrate; Figure 4 mounted on a printed circuit board; minimum footprint Value 150 350 Unit K/W K/W
7.1 Transient thermal impedance
03aa01
103 Zth(j-sp) K/W 102 = 0.5
0.2 0.1 10 0.02 1 0.05 single pulse
tp T t P tp T
=
10-1 10-5
10-4
10-3
10-2
10-1
1 tp (s)
10
Mounted on metal clad substrate.
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 07319
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 -- 27 July 2000
4 of 13
Philips Semiconductors
2N7002
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 10 µA; VGS = 0 V Tj = 25 °C Tj = -55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C Tj = 150 °C Tj = -55 °C IDSS drain-source leakage current VDS = 48 V; VGS = 0 V Tj = 25 °C Tj = 150 °C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = ±15 V; VDS = 0 V VGS = 10 V; ID = 500 mA; Figure 7 and 8 Tj = 25 °C Tj = 150 °C VGS = 4.5 V; ID = 75 mA; Figure 7 and 8 Tj = 25 °C Dynamic characteristics gfs Ciss Coss Crss ton toff forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on time turn-off time VDD = 50 V; RD = 250 ; VGS = 10 V; RG = 50 ; RGS = 50 IS = 300 mA; VGS = 0 V; Figure 13 IS = 300 mA; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V VDS = 10 V; ID = 200 mA; Figure 11 VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 12 100 - - - - - 300 25 18 7.5 3 12 - 40 30 10 10 15 mS pF pF pF ns ns - 3.8 5.3 - - 2.8 - 5 9.25 - - - 0.01 - 10 1.0 10 100 µA µA nA 1 0.6 - 2 - - - - 3.5 V V V 60 55 75 - - - V V Min Typ Max Unit Static characteristics
Source-drain diode VSD trr Qr source-drain (diode forward) voltage reverse recovery time recovered charge - - - 0.85 30 30 1.5 - - V ns nC
9397 750 07319
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 -- 27 July 2000
5 of 13
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