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Part: 2PA1774RM
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
Description: PNP General Purpose Transistor<<<>>>features Leadless Ultra Small Plastic Package (1 MM X 0.6 MM X 0.5 Mm) <<<>>>Board Space 1.3 MM X 0.9 MM <<<>>>Power Dissipation Comparable to SOT23. <<<>>><<<>>> <<<>>> Applications General Purpose Small Signal DC <<<>>>Low And Medium Frequency ac Applications <<<>>>Mobile Communications, Digital (still) Cameras, Pdas, Pcmcia Cards.
Company: Philips Semiconductors
Datasheet: Download 2PA1774RM datasheet File size : 278 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D883
BOTTOM VIEW
2PA1774M series PNP general purpose transistor
Product specification 2004 Feb 19
Philips Semiconductors
Product specification
PNP general purpose transistor
FEATURES · Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) · Board space 1.3 mm × 0.9 mm · Power dissipation comparable to SOT23. APPLICATIONS · General purpose small signal DC · Low and medium frequency AC applications · Mobile communications, digital (still) cameras, PDAs, PCMCIA cards. DESCRIPTION PNP general purpose transistor in a SOT883 leadless ultra small plastic package. NPN complement: 2PC4617M series. MARKING TYPE NUMBER 2PA1774QM 2PA1774RM 2PA1774SM ORDERING INFORMATION TYPE NUMBER 2PA1774QM 2PA1774RM 2PA1774SM - - - PACKAGE NAME DESCRIPTION MARKING CODE PB PA PC
2PA1774M series
QUICK REFERENCE DATA SYMBOL VCEO IC ICM PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current MAX. -40 -100 -200 UNIT V mA mA
handbook, halfpage
3 3 1 2
2
1 Bottom view
MAM469
Fig.1 Simplified outline (SOT883) and symbol.
VERSION SOT883
leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
2004 Feb 19
2
Philips Semiconductors
Product specification
PNP general purpose transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tamb 25 °C note 1 note 2 Tstg Tj Tamb Notes storage temperature junction temperature operating ambient temperature - - -65 - -65 CONDITIONS open emitter open base open collector - - - - - -
2PA1774M series
MIN.
MAX. -50 -40 -5 -100 -200 -100 250 430 +150 150 +150 V V V
UNIT
mA mA mA mW mW °C °C °C
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air note 1 note 2 Notes 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2. 500 290 K/W K/W VALUE UNIT
2004 Feb 19
3
Philips Semiconductors
Product specification
PNP general purpose transistor
CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain 2PA1774QM 2PA1774RM 2PA1774SM VCEsat Cc fT Note 1. Pulse test: tp 300 µs; 0.02. collector-emitter saturation voltage collector capacitance transition frequency IC = -50 mA; IB = -5 mA; note 1 IE = ie = 0; VCB = -12 V; f = 1 MHz VCE = -12 V; IC = -2 mA; f = 100 MHz CONDITIONS VCB = -30 V; IE = 0 VCB = -30 V; IE = 0; Tj = 150 °C VEB = -4 V; IC = 0 VCE = -6 V; IC = -1 mA - - -
2PA1774M series
MIN.
MAX. -100 -5 -100 270 390 560 -200 2.2 -
UNIT nA µA nA
120 180 270 - - 100
mV pF MHz
103 handbook, halfpage
(1)
MDB663
handbook, halfpage
-1200
MDB664
hFE
VBE (mV) -1000
(2) (1)
(3)
-800
102 -600
(2)
-400
(3)
10 -10-1
-1
-10
-102 -103 IC (mA)
-200 -10-1
-1
-10
-102 -103 IC (mA)
VCE = -6 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C.
VCE = -6 V. (1) Tamb = -55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.3 Fig.2 DC current gain; typical values.
Base-emitter voltage as a function of collector current; typical values.
2004 Feb 19
4
Philips Semiconductors
Product specification
PNP general purpose transistor
2PA1774M series
-103 handbook, halfpage
MDB665
handbook, halfpage
-1200
MDB666
VBEsat (mV)
VCEsat (mV)
-1000
(1)
-800 -102 -600
(1) (2) (3) (3) (2)
-400
-10 -10-1 IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C.
-1
-10
-102 -103 IC (mA)
-200 -10-1 IC/IB = 10. (1) Tamb = -55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
-1
-10
2 IC (mA) -10
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a function of collector current; typical values.
handbook, halfpage (1) IC (2) (A) (3) -0.16 (4) (5)
-0.2
MDB667
103 RCEsat ()
MDB668
(6) (7)
102
-0.12
(8) (9)
-0.08 10
(10) (1) (2)
-0.04
(3)
0 0
-2
-4
-6
-8 -10 VCE (V) (9) IB = -0.54 mA. (10) IB = -0.27 mA.
1 -10-1 IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C.
-1
-10
-102 -103 IC (mA)
(1) IB = -2.7 mA. (2) IB = -2.43 mA. (3) IB = -2.16 mA. (4) IB = -1.89 mA.
(5) IB = -1.62 mA. (6) IB = -1.35 mA. (7) IB = -1.08 mA. (8) IB = -0.81 mA.
Fig.7 Fig.6 Collector current as a function of collector-emitter voltage; typical values.
Collector-emitter equivalent on-resistance as a function of collector current; typical values.
2004 Feb 19
5
Others parts begin by 2p
2P-1
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