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Details, datasheet, quote on part number: 2PD601AS
 
 
Part number2PD601AS
CategoryDiscrete => Transistors => Bipolar => General Purpose
Description2PD601A; NPN General Purpose Transistor;; Package: SOT346 (SMT3, MPAK)
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload 2PD601AS datasheet
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Specifications, Features, Applications

FEATURES· High collector current (max. 100 mA)· Low collector-emitter saturation voltage (max. 500 mV). APPLICATIONS· General purpose switching and amplification. DESCRIPTION NPN transistor SC-59 (SOT346) plastic package. PNP complement: 2PB709A. MARKING TYPE NUMBER 2PD601AR 2PD601AS MARKING CODE ZS Fig.1

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. Refer SC-59 (SOT346) standard mounting conditions. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 CONDITIONS open emitter open base open collector MIN. MAX. mW °C UNIT

THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer SC-59 (SOT346) standard mounting conditions. CHARACTERISTICS Tamb 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain DC current gain 2PD601AR 2PD601AS VCEsat Cc fT collector-emitter saturation voltage collector capacitance transition frequency 2PD601AR 2PD601AS Note 1. Pulse test: tp 300 µs; = 100 mA; = 10 mA; note = 0; VCB = 1 MHz = 2 mA; VCE = 100 MHz CONDITIONS = 0; VCB = 0; VCB = 0; VEB = 100 mA; VCE 2 V; note = 2 mA; VCE 10 V MIN. 10 - PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500




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