FEATURES· High collector current (max. 100 mA)· Low collector-emitter saturation voltage (max. 500 mV). APPLICATIONS· General purpose switching and amplification. DESCRIPTION NPN transistor SC-70 (SOT323) plastic package. PNP complement: 2PB709AW. MARKING TYPE NUMBER 2PD601ARW 2PD601ASW Note * = made in Hong Kong. = t: made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 CONDITIONS open emitter open base open collector MIN. MARKING *6F Fig.1

1. For mounting conditions, see "Thermal considerations and footprint design for SOT323 in the General Part of Data Handbook SC18".

THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 625

1. For mounting conditions, see "Thermal considerations and footprint design for SOT323 in the General Part of Data Handbook SC18". CHARACTERISTICS Tamb 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain DC current gain 2PD601ARW 2PD601ASW VCEsat Cc fT collector-emitter saturation voltage collector capacitance transition frequency 2PD601ARW 2PD601ASW Note 1. Pulse test: tp 300 µs; = 100 mA; = 10 mA; note = 0; VCB = 1 MHz = 2 mA; VCE = 100 MHz CONDITIONS = 0; VCB = 0; VCB = 0; VEB = 100 mA; VCE 2 V; note = 2 mA; VCE mV pF MHz MIN. 10 - MAX. 10 UNIT µA nA