Details, datasheet, quote on part number: 2PD601ASW
CategoryDiscrete => Transistors => Bipolar => General Purpose
Description2PD601AW; NPN General Purpose Transistors;; Package: SOT323 (UMT3, CMPAK)
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload 2PD601ASW datasheet
Cross ref.Similar parts: 2SC4081R, 2SC4413, 2SD1819A, KTC4075, 2SC4116
Find where to buy


Features, Applications

FEATURES High collector current (max. 100 mA) Low collector-emitter saturation voltage (max. 500 mV). APPLICATIONS General purpose switching and amplification. DESCRIPTION NPN transistor SC-70 (SOT323) plastic package. PNP complement: 2PB709AW. MARKING TYPE NUMBER 2PD601ARW 2PD601ASW Note * = made in Hong Kong. = t: made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector MIN. MARKING *6F Fig.1

1. For mounting conditions, see "Thermal considerations and footprint design for SOT323 in the General Part of Data Handbook SC18".

THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 625

1. For mounting conditions, see "Thermal considerations and footprint design for SOT323 in the General Part of Data Handbook SC18". CHARACTERISTICS Tamb 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain DC current gain 2PD601ARW 2PD601ASW VCEsat Cc fT collector-emitter saturation voltage collector capacitance transition frequency 2PD601ARW 2PD601ASW Note 1. Pulse test: tp 300 s; = 100 mA; = 10 mA; note = 0; VCB = 1 MHz = 2 mA; VCE = 100 MHz CONDITIONS = 0; VCB = 0; VCB = 0; VEB = 100 mA; VCE 2 V; note = 2 mA; VCE mV pF MHz MIN. 10 - MAX. 10 UNIT A nA


Related products with the same datasheet
Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
2PD601AW 2PD601AW; NPN General Purpose Transistors
2PD602A 2PD602A; NPN General Purpose Transistor
2PD602AQ 2PD602A; NPN General Purpose Transistor;; Package: SOT346 (SMT3, MPAK)
4LVC652PWDH Octal Transceiver/register With Dual Enable 3-state
51XA-G3 Single-chip 16-bit Microcontroller
744ALS244A-1D Octal Buffer 3-state
744ALS245A-1D Octal Transceiver 3-state

74LVT14DB : 74LVT14; 3.3V Hex Inverter Schmitt Trigger;; Package: SOT108-1 (SO14), SOT337-1 (SSOP14), SOT402-1 (TSSOP14)

BYG50SERIES : Controlled Avalanche Rectifiers

BZD27-C62TR :

TDA9181 :

TDA9870A : TDA9870A; Digital TV Sound Processor (DTVSP)

TZA3004HL : Clock And Data Recovery (CDRs) TZA3004HL; Sdh/sonet Data And Clock Recovery Unit STM1/4 OC3/12

TEA1520P/N2 : SMPS ICs For Low-power Systems The TEA152x family STARplug+ is a Switched Mode Power Supply (SMPS) controller IC that operates directly from the rectified universal mains. It is implemented in the high-voltage EZ-HV SOI process, combined with a low-voltage BiCMOS process. The device includes a high

PSMN4R3-80BS : N-channel 80 V, 4.3 M Standard Level MOSFET In D2PAK Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

0-C     D-L     M-R     S-Z