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Part: 74AHCT1G00
Category: Logic -> Gates -> NAND Gates
Description: 74AHC1G00; 74AHCT1G00; 2-input NAND Gate;; Package: SOT353 (UMT5), SOT753
Company: Philips Semiconductors
Datasheet: Download 74AHCT1G00 datasheet File size : 67 kB
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INTEGRATED CIRCUITS
DATA SHEET
74AHC1G00; 74AHCT1G00 2-input NAND gate
Product specification Supersedes data of 2002 Feb 27 2002 May 27
Philips Semiconductors
Product specification
2-input NAND gate
FEATURES · Symmetrical output impedance · High noise immunity · ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V. · Low power dissipation · Balanced propagation delays · Very small 5-pin package · Output capability: standard · Specified from -40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf 3.0 ns.
74AHC1G00; 74AHCT1G00
DESCRIPTION The 74AHC1G/AHCT1G00 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G00 provides the 2-input NAND function.
TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF VCC = supply voltage in Volts. 2. The condition is VI = GND to VCC. PARAMETER propagation delay A and B to Y input capacitance power dissipation capacitance CL = 50 pF; f = 1 MHz; notes 1 and 2 CONDITIONS AHC1G CL = 15 pF; VCC = 5 V 3.5 1.5 17 AHCT1G 3.6 1.5 18 ns pF pF UNIT
2002 May 27
2
Philips Semiconductors
Product specification
2-input NAND gate
FUNCTION TABLE See note 1. INPUTS A L L H H Note 1. H = HIGH voltage level; L = LOW voltage level. ORDERING INFORMATION B L H L H
74AHC1G00; 74AHCT1G00
OUTPUT Y H H H L
PACKAGES TYPE NUMBER 74AHC1G00GW 74AHCT1G00GW 74AHC1G00GV 74AHCT1G00GV PINNING PIN 1 2 3 4 5 B A GND Y VCC SYMBOL data input B data input A ground (0 V) data output Y supply voltage DESCRIPTION TEMPERATURE RANGE -40 to +125 °C -40 to +125 °C -40 to +125 °C -40 to +125 °C PINS 5 5 5 5 PACKAGE SC-88A SC-88A SC-74A SC-74A MATERIAL plastic plastic plastic plastic CODE SOT353 SOT353 SOT753 SOT753 MARKING AA CA A00 C00
2002 May 27
3
Philips Semiconductors
Product specification
2-input NAND gate
74AHC1G00; 74AHCT1G00
handbook, halfpage
B1 A2 GND 3
MNA096
5 VCC
handbook, halfpage
1 2
B A
00
4 Y
Y
4
MNA097
Fig.1 Pin configuration.
Fig.2 Logic symbol.
handbook, halfpage
1 2
handbook, halfpage
&
B Y
4
MNA098
A
MNA099
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
2002 May 27
4
Philips Semiconductors
Product specification
2-input NAND gate
RECOMMENDED OPERATING CONDITIONS
74AHC1G00; 74AHCT1G00
74AHC1G SYMBOL VCC VI VO Tamb tr, tf (t/f) PARAMETER supply voltage input voltage output voltage operating ambient temperature input rise and fall times CONDITIONS MIN. 2.0 0 0 see DC and AC -40 characteristics per device VCC = 3.3 ±0.3 V VCC = 5 ±0.5 V - - TYP. 5.0 - - +25 - - MAX. 5.5 5.5 VCC +125 100 20 MIN. 4.5 0 0 -40 - -
74AHCT1G UNIT TYP. 5.0 - - +25 - - MAX. 5.5 5.5 VCC +125 - 20 V V V °C ns/V ns/V
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC VI IIK IOK IO ICC Tstg PD Note 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. PARAMETER supply voltage input voltage input diode current output diode current output source or sink current VCC or GND current storage temperature power dissipation per package for temperature range from -40 to +125 °C VI VCC + 0.5 V; note 1 -0.5 V < VO < VCC + 0.5 V CONDITIONS MIN. -0.5 -0.5 - - - - -65 - MAX. +7.0 +7.0 -20 ±20 ±25 ±75 +150 250 UNIT V V mA mA mA mA °C mW
2002 May 27
5
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