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Details, datasheet, quote on part number:74AUP1G86GW
 
 
Part:74AUP1G86GW
Category:Logic => Gates => EXOR/EXNOR Gates
Description:Low-power 2-input EXCLUSIVE-OR gate The 74AUP1G86 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74AUP1G86 provides the single 2-input EXCLUSIVE-OR function. Features Wide supply voltage range from 0.8 V to 3.6 V High noise immunity Complies with JEDEC standards: JESD8-12 (0.8 V to 1.3 V) JESD8-11 (0.9 V to 1.65 V) JESD8-7 (1.2 V to 1.95 V) JESD8-5 (1.8 V to 2.7 V) JESD8-B (2.7 V to 3.6 V) ESD protection: HBM JESD22-A114-C exceeds 2000 V MM JESD22-A115-A exceeds 200 V CDM JESD22-C101-C exceeds 1000 V Low static power consumption; ICC = 0.9 uA (maximum) Latch-up performance exceeds 100 mA per JESD 78 Class II Inputs accept voltages up to 3.6 V Low noise overshoot and undershoot < 10 pct of VCC IOFF circuitry provides partial Power-down mode operation Multiple package options Specified from -40 Cel to +85Cel and -40 Cel to +125 Cel
Company:Philips Semiconductors
Datasheet:Download 74AUP1G86GW datasheet   File size : 86 kB
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