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Details, datasheet, quote on part number:74HCT1G125GW
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Datasheet text preview:
INTEGRATED CIRCUITS
DATA SHEET
74HC1G125; 74HCT1G125 Bus buffer/line drivers; 3-state
Product specification Supersedes data of 2001 Mar 02 2002 May 17
Philips Semiconductors
Product specification
Bus buffer/line drivers; 3-state
FEATURES · Wide supply voltage range from 2.0 to 6.0 V · Symmetrical output impedance · High noise immunity · Low power dissipation · Balanced propagation delays · Very small 5 pins package · Output capability: bus driver.
74HC1G125; 74HCT1G125
DESCRIPTION The 74HC1G/HCT1G125 is a high-speed Si-gate CMOS device. The 74HC1G/HCT1G125 provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input pin (OE). A HIGH at pin OE causes the output as assume a high-impedance OFF-state. The bus driver output currents are equal compared to the 74HC/HCT125.
QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf 6.0 ns. TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; (CL × VCC2 × fo) = sum of outputs. 2. For HC1G the condition is VI = GND to VCC. For HCT1G the condition is VI = GND to VCC - 1.5 V. FUNCTION TABLE See note 1. INPUTS OE L L H Note 1. H = HIGH voltage level; L = LOW voltage level; X = don't care; Z = high-impedance OFF-state. A L H X OUTPUT Y L H Z PARAMETER propagation delay A to Y input capacitance power dissipation capacitance notes 1 and 2 CONDITIONS HC1G CL = 15 pF; VCC = 5 V 9 1.5 30 HCT1G 10 1.5 27 ns pF pF UNIT
2002 May 17
2
Philips Semiconductors
Product specification
Bus buffer/line drivers; 3-state
ORDERING INFORMATION
74HC1G125; 74HCT1G125
PACKAGE TYPE NUMBER 74HC1G125GW 74HCT1G125GW 74HC1G125GV 74HCT1G125GV PINNING PIN 1 2 3 4 5 OE A GND Y VCC SYMBOL output enable input data input A ground (0 V) data output Y supply voltage DESCRIPTION TEMPERATURE RANGE -40 to +125 °C -40 to +125 °C -40 to +125 °C -40 to +125 °C PINS 5 5 5 5 PACKAGE SC-88A SC-88A SC-74A SC-74A MATERIAL plastic plastic plastic plastic CODE SOT353 SOT353 SOT753 SOT753 MARKING HM TM H25 T25
handbook, halfpage
OE 1 A2 GND 3
MNA117
5 VCC
handbook, halfpage
2
A
Y
4
125
1 4 Y
MNA118
OE
Fig.1 Pin configuration.
Fig.2 Logic symbol.
handbook, halfpage
2 4 1 OE
MNA119
handbook, halfpage
A
Y
OE
MNA120
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
2002 May 17
3
Philips Semiconductors
Product specification
Bus buffer/line drivers; 3-state
RECOMMENDED OPERATING CONDITIONS
74HC1G125; 74HCT1G125
74HC1G125 SYMBOL VCC VI VO Tamb PARAMETER supply voltage input voltage output voltage operating ambient temperature input rise and fall times CONDITIONS MIN. 2.0 0 0 see DC and AC -40 characteristics per device VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V - - - TYP. 5.0 - - +25 MAX. 6.0 VCC VCC +125
74HCT1G125 UNIT MIN. 4.5 0 0 -40 TYP. 5.0 - - +25 MAX. 5.5 VCC VCC +125 V V V °C
tr, tf
- - -
1 000 500 400
- - -
- - -
- 500 -
ns ns ns
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC IIK IOK IO ICC Tstg PD Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. Above 55 °C the value of PD derates linearly with 2.5 mW/K. PARAMETER supply voltage input diode current output diode current output source or sink current VCC or GND current storage temperature power dissipation per package for temperature range from -40 to +125 °C; note 2 VI VCC + 0.5 V; note 1 VO VCC + 0.5 V; note 1 -0.5 V < VO < VCC + 0.5 V; note 1 note 1 CONDITIONS MIN. -0.5 - - - - -65 - MAX. +7.0 ±20 ±20 ±12.5 ±25 +150 200 UNIT V mA mA mA mA °C mW
2002 May 17
4
Philips Semiconductors
Product specification
Bus buffer/line drivers; 3-state
DC CHARACTERISTICS
74HC1G125; 74HCT1G125
Family 74HC1G At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER OTHER VIH HIGH-level input voltage VCC (V) 2.0 4.5 6.0 VIL LOW-level input voltage 2.0 4.5 6.0 VOH HIGH-level output voltage VI = VIH or VIL; IO = -20 µA VI = VIH or VIL; IO = -20 µA VI = VIH or VIL; IO = -20 µA VI = VIH or VIL; IO = -2.0 mA VI = VIH or VIL; IO = -2.6 mA VOL LOW-level output voltage VI = VIH or VIL; IO = 20 µA VI = VIH or VIL; IO = 20 µA VI = VIH or VIL; IO = 20 µA VI = VIH or VIL; IO = 2.0 mA VI = VIH or VIL; IO = 2.6 mA ILI ICC Note 1. All typical values are measured at Tamb = 25 °C. input leakage current quiescent supply current VI = VCC or GND 2.0 4.5 6.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 6.0 MIN. 1.5 3.15 4.2 - - - 1.9 4.4 5.9 4.13 5.63 - - - - - - - Tamb (°C) -40 to +85 TYP.(1) 1.2 2.4 3.2 0.8 2.1 2.8 2.0 4.5 6.0 4.32 5.81 0 0 0 0.15 0.16 - - MAX. - - - 0.5 1.35 1.8 - - - - - 0.1 0.1 0.1 0.33 0.33 1.0 10 -40 to +125 MIN. 1.5 3.15 4.2 - - - 1.9 4.4 5.9 3.7 5.2 - - - - - - - MAX. - - - 0.5 1.35 1.8 - - - - - 0.1 0.1 0.1 0.4 0.4 1.0 20 V V V V V V V V V V V V V V V V µA µA UNIT
VI = VCC or GND; 6.0 IO = 0
2002 May 17
5
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