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Part: 74HCT1G126GW
Category:
Logic
-> Buffers/Drivers
Description: 74HC1G126; 74HCT1G126; Bus Buffer/line Driver; 3-state;; Package: SOT353 (UMT5), SOT753
Company: Philips Semiconductors
Datasheet: Download 74HCT1G126GW datasheet File size : 345 kB
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Datasheet text preview:
INTEGRATED CIRCUITS
DATA SHEET
74HC1G126; 74HCT1G126 Bus buffer/line driver; 3-state
Product specification Supersedes data of 2001 Apr 06 2002 May 15
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
FEATURES · Wide operating voltage from 2.0 to 6.0 V · Symmetrical output impedance · High noise immunity · Low power dissipation · Balanced propagation delays · Very small 5 pins package · Output capability: bus driver.
74HC1G126; 74HCT1G126
DESCRIPTION The 74HC1G/HCT1G126 is a highspeed Si-gate CMOS device. The 74HC1G/HCT1G126 provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input pin (OE). A LOW at pin OE causes the output as assume a high-impedance OFF-state. The bus driver output currents are equal compared to the 74HC/HCT126.
QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = rf 6.0 ns. TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts. 2. For HC1G the conditions is VI = GND to VCC. For HCT1G the conditions is VI = GND to VCC - 1.5 V. FUNCTION TABLE See note 1. INPUTS OE H H L Note 1. H = HIGH voltage level; L = LOW voltage level; X = don't care; Z = high-impedance OFF-state. A L H X OUTPUT Y L H Z PARAMETER propagation delay A to Y input capacitance power dissipation capacitance notes 1 and 2 CONDITIONS HC1G CL = 15 pF; VCC = 5 V 9 1.5 30 HCT1G 10 1.5 27 ns pF pF UNIT
2002 May 15
2
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
ORDERING INFORMATION
74HC1G126; 74HCT1G126
PACKAGES TYPE NUMBER 74HC1G126GW 74HCT1G126GW 74HC1G126GV 74HCT1G126GV PIN DESCRIPTION PIN 1 2 3 4 5 OE A GND Y VCC SYMBOL output enable input data input A ground (0 V) data output Y supply voltage NAME AND FUNCTION TEMPERATURE RANGE -40 to +125 °C -40 to +125 °C -40 to +125 °C -40 to +125 °C PINS 5 5 5 5 PACKAGE SC88A SC88A SC-74A SC-74A MATERIAL plastic plastic plastic plastic CODE SOT353 SOT353 SOT753 SOT753 MARKING HN TN H26 T26
handbook, halfpage
OE 1 A2 GND 3
MNA124
5 VCC
handbook, halfpage
2 1
A OE
Y
4
126
4 Y
MNA125
Fig.1 Pin configuration.
Fig.2 Logic symbol.
handbook, halfpage
2 4 1 OE
MNA126
handbook, halfpage
A
Y
OE
MNA127
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
2002 May 15
3
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
RECOMMENDED OPERATING CONDITIONS
74HC1G126; 74HCT1G126
74HC1G SYMBOL VCC VI VO Tamb PARAMETER supply voltage input voltage output voltage operating ambient temperature input rise and fall times CONDITIONS MIN. 2.0 0 0 see DC and AC -40 characteristics per device VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V - - - TYP. 5.0 - - +25 MAX. 6.0 VCC VCC +125 MIN. 4.5 0 0 -40
74HCT1G UNIT TYP. 5.0 - - +25 MAX. 5.5 VCC VCC +125 V V V °C
tr, tf
- - -
1 000 500 400
- - -
- - -
- 500 -
ns ns ns
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V); notes 1 and 2. SYMBOL VCC IIK IOK IO ICC Tstg PD Notes 1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and functional operation of the device at these or any other conditions beyond those under `recommended operating conditions' is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. 2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 3. Above 55 °C the value of PD derates linearly with 2.5 mW/K. PARAMETER supply voltage input diode current output diode current output source or sink current VCC or GND current storage temperature power dissipation per package for temperature range from -40 to +125 °C; note 3 VI VCC + 0.5 V VO VCC + 0.5 V -0.5 V < VO < VCC + 0.5 V CONDITIONS MIN. -0.5 - - - - -65 - MAX. +7.0 ±20 ±20 ±35.0 ±70 +150 200 UNIT V mA mA mA mA °C mW
2002 May 15
4
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
DC CHARACTERISTICS
74HC1G126; 74HCT1G126
Family 74HC1G At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER OTHER VIH HIGH-level input voltage VCC (V) 2.0 4.5 6.0 VIL LOW-level input voltage 2.0 4.5 6.0 VOH HIGH-level output voltage VI = VIH or VIL; IO = -20 µA VI = VIH or VIL; IO = -20 µA VI = VIH or VIL; IO = -20 µA VI = VIH or VIL; IO = -6.0 mA VI = VIH or VIL; IO = -7.8 mA VOL LOW-level output voltage VI = VIH or VIL; IO = 20 µA VI = VIH or VIL; IO = 20 µA VI = VIH or VIL; IO = 20 µA VI = VIH or VIL; IO = 6.0 mA VI = VIH or VIL; IO = 7.8 mA ILI IOZ ICC Note 1. All typical values are measured at Tamb = 25 °C. input leakage current 3-state output current OFF-state quiescent supply current VI = VCC or GND VI = VIH or VIL; VO = VCC or GND VI = VCC or GND; IO = 0 2.0 4.5 6.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 6.0 6.0 6.0 Tamb (°C) -40 to +85 MIN. 1.5 3.15 4.2 - - - 1.9 4.4 5.9 3.84 5.34 - - - - - - - - TYP.(1) 1.2 2.4 3.2 0.8 2.1 2.8 2.0 4.5 6.0 4.32 5.81 0 0 0 0.15 0.16 - - - MAX. - - - 0.5 1.35 1.8 - - - - - 0.1 0.1 0.1 0.33 0.33 1.0 5 10 -40 to +125 MIN. 1.5 3.15 4.2 - - - 1.9 4.4 5.9 3.7 5.2 - - - - - - - - MAX. - - - 0.5 1.35 1.8 - - - - - 0.1 0.1 0.1 0.4 0.4 1.0 10 20 V V V V V V V V V V V V V V V V µA µA µA UNIT
2002 May 15
5
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