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Part: 74HCT1G32GW
Category:
Logic
-> Gates
-> OR Gates
Description: 74HC1G32; 74HCT1G32; 2-input OR GATE;; Package: SOT353 (UMT5), SOT753
Company: Philips Semiconductors
Datasheet: Download 74HCT1G32GW datasheet File size : 345 kB
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Datasheet text preview:
INTEGRATED CIRCUITS
DATA SHEET
74HC1G32; 74HCT1G32 2-input OR gate
Product specification Supersedes data of 2001 Apr 06 2002 May 15
Philips Semiconductors
Product specification
2-input OR gate
FEATURES · Wide operating voltage from 2.0 to 6.0 V · Symmetrical output impedance · High noise immunity · Low power dissipation · Balanced propagation delays · Very small 5 pins package · Output capability: standard. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf 6.0 ns. DESCRIPTION
74HC1G32; 74HCT1G32
The 74HC1G/HCT1G32 is a highspeed Si-gate CMOS device. The 74HC1G/HCT1G32 provides the 2-input OR function. The standard output currents are 1/2 compared to the 74HC/HCT32.
TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts. 2. For HC1G the conditions is VI = GND to VCC. For HCT1G the conditions is VI = GND to VCC - 1.5 V. FUNCTION TABLE See note 1. INPUTS A L L H H Note 1. H = HIGH voltage level; L = LOW voltage level. B L H L H OUTPUT Y L H H H PARAMETER propagation delay A and B to Y input capacitance power dissipation capacitance notes 1 and 2 CONDITIONS HC1G CL = 15 pF; VCC = 5 V 8 1.5 19 HCT1G 10 1.5 20 ns pF pF UNIT
2002 May 15
2
Philips Semiconductors
Product specification
2-input OR gate
ORDERING INFORMATION PACKAGES TYPE NUMBER 74HC1G32GW 74HCT1G32GW 74HC1G32GV 74HCT1G32GV PIN DESCRIPTION PIN 1 2 3 4 5 B A GND Y VCC SYMBOL data input B data input A ground (0 V) data output Y supply voltage TEMPERATURE RANGE -40 to +125 °C -40 to +125 °C -40 to +125 °C -40 to +125 °C PINS 5 5 5 5 PACKAGE SC88A SC88A SC-74A SC-74A
74HC1G32; 74HCT1G32
MATERIAL plastic plastic plastic plastic
CODE SOT353 SOT353 SOT753 SOT753
MARKING HG TG H32 T32
DESCRIPTION
handbook, halfpage
B1 A2 GND 3
MNA163
5 VCC
handbook, halfpage
1 2
B A
32
4 Y
Y
4
MNA164
Fig.1 Pin configuration.
Fig.2 Logic symbol.
handbook, halfpage handbook, halfpage
1 2
1
B
4 Y
MNA165
A
MNA166
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
2002 May 15
3
Philips Semiconductors
Product specification
2-input OR gate
RECOMMENDED OPERATING CONDITIONS 74HC1G SYMBOL VCC VI VO Tamb PARAMETER supply voltage input voltage output voltage operating ambient temperature input rise and fall times see DC and AC characteristics per device VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V CONDITIONS MIN. 2.0 0 0 -40 TYP. 5.0 - - +25
74HC1G32; 74HCT1G32
74HCT1G UNIT MAX. 6.0 VCC VCC +125 MIN. 4.5 0 0 -40 TYP. 5.0 - - +25 MAX. 5.5 VCC VCC +125 V V V °C
tr, tf
- - -
- - -
1 000 500 400
- - -
- - -
- 500 -
ns ns ns
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V); notes 1 and 2. SYMBOL VCC IIK IOK IO ICC Tstg PD Notes 1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and functional operation of the device at these or any other conditions beyond those under `recommended operating conditions' is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. 2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 3. Above 55 °C the value of PD derates linearly with 2.5 mW/K. PARAMETER supply voltage input diode current output diode current output source or sink current VCC or GND current storage temperature power dissipation per package VI VCC + 0.5 V VO VCC + 0.5 V -0.5 V < VO < VCC + 0.5 V CONDITIONS MIN. -0.5 - - - - -65 for temperature range from -40 to +125 °C; - note 3 MAX. +7.0 ±20 ±20 ±12.5 ±25 +150 200 UNIT V mA mA mA mA °C mW
2002 May 15
4
Philips Semiconductors
Product specification
2-input OR gate
DC CHARACTERISTICS
74HC1G32; 74HCT1G32
Family 74HC1G At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER OTHER VIH HIGH-level input voltage VCC (V) 2.0 4.5 6.0 VIL LOW-level input voltage 2.0 4.5 6.0 VOH HIGH-level output voltage VI = VIH or VIL; IO = -20 µA VI = VIH or VIL; IO = -20 µA VI = VIH or VIL; IO = -20 µA VI = VIH or VIL; IO = -2.0 mA VI = VIH or VIL; IO = -2.6 mA VOL LOW-level output voltage VI = VIH or VIL; IO = 20 µA VI = VIH or VIL; IO = 20 µA VI = VIH or VIL; IO = 20 µA VI = VIH or VIL; IO = 2.0 mA VI = VIH or VIL; IO = 2.6 mA ILl ICC Note 1. All typical values are measured at Tamb = 25 °C. input leakage current quiescent supply current VI = VCC or GND VI = VCC or GND; IO = 0 2.0 4.5 6.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 6.0 6.0 Tamb (°C) -40 to +85 MIN. 1.5 3.15 4.2 - - - 1.9 4.4 5.9 4.13 5.63 - - - - - - - TYP.(1) 1.2 2.4 3.2 0.8 2.1 2.8 2.0 4.5 6.0 4.32 5.81 0 0 0 0.15 0.16 - - MAX. - - - 0.5 1.35 1.8 - - - - - 0.1 0.1 0.1 0.33 0.33 1.0 10 -40 to +125 MIN. 1.5 3.15 4.2 - - - 1.9 4.4 5.9 3.7 5.2 - - - - - - - MAX. - - - 0.5 1.35 1.8 - - - - - 0.1 0.1 0.1 0.4 0.4 1.0 20 V V V V V V V V V V V V V V V V µA µA UNIT
2002 May 15
5
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