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Part: 74HCT1G66GV
Category:
Logic
-> Analog Switches/Multiplexers
-> Analog Switches
Description: 74HC1G66; 74HCT1G66; Bilateral Switch;; Package: SOT353 (UMT5), SOT753
Company: Philips Semiconductors
Datasheet: Download 74HCT1G66GV datasheet File size : 345 kB
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Datasheet text preview:
INTEGRATED CIRCUITS
DATA SHEET
74HC1G66; 74HCT1G66 Bilateral switch
Product specification Supersedes data of 2001 Mar 02 2002 May 15
Philips Semiconductors
Product specification
Bilateral switch
FEATURES · Wide operating voltage range from 2.0 to 9.0 V · Very low ON-resistance: 45 (typical) at VCC = 4.5 V 30 (typical) at VCC = 6.0 V 25 (typical) at VCC = 9.0 V. · High noise immunity · Low power dissipation · Very small 5 pins package · Output capability: non standard. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf = 6.0 ns. DESCRIPTION
74HC1G66; 74HCT1G66
The 74HC1G/HCT1G66 is a high-speed Si-gate CMOS device. The 74HC1G/HCT1G66 provides an analog switch. The switch has two input/output pins (Y and Z) and an active HIGH enable input pin (E). When pin E is LOW, the analog switch is turned off. The non standard output currents are equal compared to the 74HC/HCT4066.
TYPICAL SYMBOL tPZH/tPZL tPHZ/tPLZ CI CPD CS Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + ((CL +CS)× VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; CS = maximum switch capacitance in pF; VCC = supply voltage in Volts; ((CL +CS)× VCC2 × fo) = sum of outputs. 2. For HC1G the condition is VI = GND to VCC. For HCT1G the condition is VI = GND to VCC - 1.5 V. FUNCTION TABLE See note 1. INPUT E L H Note 1. H = HIGH voltage level; L = LOW voltage level. 2002 May 15 2 SWITCH OFF ON PARAMETER turn-on time E to Vos turn-off time E to Vos input capacitance power dissipation capacitance maximum switch capacitance notes 1 and 2 CONDITIONS HC1G CL = 15 pF; RL = 1 k; VCC = 5 V 11 CL = 15 pF; RL = 1 k; VCC = 5 V 11 1.5 9 8 HCT1G 12 12 1.5 9 8 ns ns pF pF pF UNIT
Philips Semiconductors
Product specification
Bilateral switch
ORDERING INFORMATION PACKAGE OUTSIDE NORTH AMERICA 74HC1G66GW 74HCT1G66GW 74HC1G66GV 74HCT1G66GV PINNING PIN 1 2 3 4 5 Y Z GND E VCC SYMBOL TEMPERATURE RANGE -40 to +125 °C -40 to +125 °C -40 to +125 °C -40 to +125 °C PINS 5 5 5 5 PACKAGE SC-88A SC-88A SC-74A SC-74A
74HC1G66; 74HCT1G66
MATERIAL plastic plastic plastic plastic
CODE SOT353 SOT353 SOT753 SOT753
MARKING HL TL H66 T66
DESCRIPTION independent input/output Y independent input/output Z ground (0 V) enable input E (active HIGH) supply voltage
handbook, halfpage
Y1 Z2 GND 3
MNA074
5 VCC
handbook, halfpage
66
4 E
4
Y E Z
1 2
MNA075
Fig.1 Pin configuration.
Fig.2 Logic symbol.
handbook, halfpage
Y
E
handbook, halfpage
1 4#
1 1 X1
MNA076
2 VCC VCC
GND
Z
MNA077
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
2002 May 15
3
Philips Semiconductors
Product specification
Bilateral switch
RECOMMENDED OPERATING CONDITIONS 74HC1G66 SYMBOL VCC VI VS Tamb PARAMETER supply voltage input voltage switch voltage operating ambient temperature input rise and fall times see DC and AC characteristics per device VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V VCC = 10.0 V CONDITIONS MIN. 2.0 GND GND -40 TYP. 5.0 - - -
74HC1G66; 74HCT1G66
74HCT1G66 UNIT MIN. 4.5 GND GND -40 TYP. 5.0 - - - MAX. 5.5 VCC VCC +125 V V V °C
MAX. 10.0 VCC VCC +125
tr, tf
- - - -
- 6.0 - -
1 000 500 400 250
- - - -
- 6.0 - -
- 500 - -
ns ns ns ns
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V); see note 1. SYMBOL VCC IIK ISK IS ICC Tstg PD PS Notes 1. To avoid drawing VCC current out of pin Z, when switch current flows in pin Y, the voltage drop across the bidirectional switch must not exceed 0.4 V. If the switch current flows into pin Z, no VCC current will flow out of terminal Y. In this case there is no limit for the voltage drop across the switch, but the voltage at pins Y and Z may not exceed VCC or GND. 2. Above 55 °C the value of PD derates linearly with 2.5 mW/K. PARAMETER supply voltage input diode current switch diode current switch source or sink current VCC or GND current storage temperature power dissipation per package power dissipation per switch for temperature range from -40 to + 125 °C; note 2 VI VCC + 0.5 V VS VCC + 0.5 V -0.5 V < VS < VCC + 0.5 V CONDITIONS MIN. -0.5 - - - - -65 - - MAX. +11.0 ±20 ±20 ±25 ±50 +150 200 100 UNIT V mA mA mA mA °C mW mW
2002 May 15
4
Philips Semiconductors
Product specification
Bilateral switch
DC CHARACTERISTICS
74HC1G66; 74HCT1G66
Family 74HC1G66 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER OTHER VIH HIGH-level input voltage VCC (V) 2.0 4.5 6.0 9.0 VIL LOW-level input voltage 2.0 4.5 6.0 9.0 ILI IS input leakage current analog switch current, OFF-state analog switch current, ON-state ICC quiescent supply current VI = VCC or GND VI = VIH or VIL; VS = VCC - GND; see Fig.6 VI = VIH or VIL; VS = VCC - GND; see Fig.7 VI = VCC or GND; Vis = GND or VCC; Vos = VCC or GND 6.0 10.0 10.0 MIN. 1.5 3.15 4.2 6.3 - - - - - - - Tamb (°C) -40 to +85 TYP.(1) 1.2 2.4 3.2 4.7 0.8 2.1 2.8 4.3 0.1 0.2 0.1 MAX. - - - - 0.5 1.35 1.8 2.7 1.0 2.0 1.0 -40 to +125 MIN. 1.5 3.15 4.2 6.3 - - - - - - - MAX. - - - - 0.5 1.35 1.8 2.7 1.0 2.0 1.0 V V V V V V V V µA µA µA UNIT
10.0
-
0.1
1.0
-
1.0
µA
6.0 10.0
- -
1.0 2.0
10 20
- -
20 40
µA µA
Note 1. All typical values are measured at Tamb = 25 °C.
2002 May 15
5
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