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Details, datasheet, quote on part number:74HCT1G86GW
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| Part: | 74HCT1G86GW |
| Category: | Logic => Gates => XOR (Exclusive OR) Gates |
| Description: | 74HC1G86; 74HCT1G86; 2-input Exclusive_OR GATE;; Package: SOT353 (UMT5), SOT753 |
| Company: | Philips Semiconductors |
| Datasheet: | Download 74HCT1G86GW datasheet File size : 76 kB |
| Request For quote: | Find where to buy 74HCT1G86GW
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Datasheet text preview:
INTEGRATED CIRCUITS
DATA SHEET
74HC1G86; 74HCT1G86 2-input EXCLUSIVE-OR gate
Product specification Supersedes data of 2001 Apr 06 2002 May 15
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
FEATURES · Wide operating voltage range from 2.0 to 6.0 V · Symmetrical output impedance · High noise immunity · Low power dissipation · Balanced propagation delays · Very small 5 pins package · Output capability: standard. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf = 6.0 ns. DESCRIPTION
74HC1G86; 74HCT1G86
The 74HC1G/HCT1G86 is a high-speed Si-gate CMOS device. The 74HC1G/HCT1G86 provides the 2-input EXCLUSIVE-OR function. The standard output currents are 1/2 compared to the 74HC/HCT86.
TYPICAL SYMBOL tPHL/ tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; (CL × VCC2 × fo) = sum of outputs. 2. For HC1G the condition is VI = GND to VCC. For HCT1G the condition is VI = GND to VCC - 1.5 V. FUNCTION TABLE See note 1. INPUTS A L L H H Note 1. H = HIGH voltage level; L = LOW voltage level. B L H L H OUTPUT Y L H H L PARAMETER propagation delay A and B to Y input capacitance power dissipation capacitance notes 1 and 2 CONDITIONS HC1G CL = 15 pF; VCC = 5 V 9 1.5 23 HCT1G 10 1.5 23 ns pF pF UNIT
2002 May 15
2
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
ORDERING AND PACKAGE INFORMATION PACKAGES OUTSIDE NORTH AMERICA 74HC1G86GW 74HCT1G86GW 74HC1G86GV 74HCT1G86GV PINNING PIN 1 2 3 4 5 B A GND Y VCC SYMBOL data input B data input A ground (0 V) data output Y supply voltage TEMPERATURE RANGE -40 to +125 °C -40 to +125 °C -40 to +125 °C -40 to +125 °C PINS 5 5 5 5 PACKAGE SC-88A SC-88A SC-74A SC-74A
74HC1G86; 74HCT1G86
MATERIAL plastic plastic plastic plastic
CODE SOT353 SOT353 SOT753 SOT753
MARKING HH TH H86 T86
DESCRIPTION
handbook, halfpage
B1 A2 GND 3
MNA037
5 VCC
handbook, halfpage
1
86
4 Y
2
B A
Y
4
MNA038
Fig.1 Pin configuration.
Fig.2 Logic symbol.
handbook, halfpage
B
handbook, halfpage
1 2
=1
MNA039
4
Y A
MNA040
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
2002 May 15
3
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
RECOMMENDED OPERATING CONDITIONS 74HC1G86 SYMBOL VCC VI VO Tamb PARAMETER supply voltage input voltage output voltage operating ambient temperature input rise and fall times see DC and AC characteristics per device VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V CONDITIONS MIN. 2.0 0 0 -40 TYP. 5.0 - - +25
74HC1G86; 74HCT1G86
74HCT1G86 UNIT MIN. 4.5 0 0 -40 TYP. 5.0 - - +25 MAX. 5.5 VCC VCC +125 V V V °C
MAX. 6.0 VCC VCC +125
tr, tf
- - -
- - -
1 000 500 400
- - -
- - -
- 500 -
ns ns ns
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC IIK IOK IO ICC Tstg PD Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. Above 55 °C the value of PD derates linearly with 2.5 mW/K PARAMETER supply voltage input diode current output diode current output source or sink current VCC or GND current storage temperature power dissipation per package for temperature range from -40 to +125 °C; note 2 VI VCC + 0.5 V; note 1 VO VCC + 0.5 V; note 1 -0.5 V < VO < VCC + 0.5 V; note 1 note 1 CONDITIONS MIN. -0.5 - - - - -65 - MAX. +7.0 ±20 ±20 ±12.5 ±25 +150 200 UNIT V mA mA mA mA °C mW
2002 May 15
4
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
DC CHARACTERISTICS
74HC1G86; 74HCT1G86
Family 74HC1G86 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER OTHER VIH HIGH-level input voltage VCC (V) 2.0 4.5 6.0 VIL LOW-level input voltage 2.0 4.5 6.0 VOH HIGH-level output voltage VI = VIH or VIL; IO = -20 µA VI = VIH or VIL; IO = -20 µA VI = VIH or VIL; IO = -20 µA VI = VIH or VIL; IO = -2.0 mA VI = VIH or VIL; IO = -2.6 mA VOL LOW-level output voltage VI = VIH or VIL; IO = 20 µA VI = VIH or VIL; IO = 20 µA VI = VIH or VIL; IO = 20 µA VI = VIH or VIL; IO = 2.0 mA VI = VIH or VIL; IO = 2.6 mA ILI ICC Note 1. All typical values are measured at Tamb = 25 °C. input leakage current quiescent supply current VI = VCC or GND 2.0 4.5 6.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 6.0 MIN. 1.5 3.15 4.2 - - - 1.9 4.4 5.9 4.13 5.63 - - - - - - - Tamb (°C) -40 to +85 TYP.(1) 1.2 2.4 3.2 0.8 2.1 2.8 2.0 4.5 6.0 4.32 5.81 0 0 0 0.15 0.16 - - MAX. - - - 0.5 1.35 1.8 - - - - - 0.1 0.1 0.1 0.33 0.33 1.0 10 -40 to +125 MIN. 1.5 3.15 4.2 - - - 1.9 4.4 5.9 3.7 5.2 - - - - - - - MAX. - - - 0.5 1.35 1.8 - - - - - 0.1 0.1 0.1 0.4 0.4 1.0 20 V V V V V V V V V V V V V V V V µA µA UNIT
VI = VCC or GND; 6.0 IO = 0
2002 May 15
5
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