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Part: 74LVC1G32GV
Category:
Logic
-> Gates
-> OR Gates
Description: 74LVC1G32; Single 2-input OR GATE;; Package: SOT353 (UMT5), SOT753
Company: Philips Semiconductors
Datasheet: Download 74LVC1G32GV datasheet File size : 137 kB
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INTEGRATED CIRCUITS
DATA SHEET
74LVC1G32 Single 2-input OR gate
Product specification Supersedes data of 2002 May 21 2002 Nov 15
Philips Semiconductors
Product specification
Single 2-input OR gate
FEATURES · Wide supply voltage range from 1.65 to 5.5 V · High noise immunity · Complies with JEDEC standard: JESD8-7 (1.65 to 1.95 V) JESD8-5 (2.3 to 2.7 V) JESD8B/JESD36 (2.7 to 3.6 V). · ±24 mA output drive (VCC = 3.0 V) · CMOS low power consumption · Latch-up performance exceeds 250 mA · Direct interface with TTL levels · Inputs accept voltages up to 5 V · Multiple package options · ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V · Specified from -40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf 2.5 ns. SYMBOL tPHL/tPLH PARAMETER propagation delay inputs A, B to output Y CONDITIONS VCC = 1.8 V; CL = 30 pF; RL = 1 k VCC = 2.5 V; CL = 30 pF; RL = 500 VCC = 2.7 V; CL = 50 pF; RL = 500 VCC = 3.3 V; CL = 50 pF; RL = 500 VCC = 5.0 V; CL = 50 pF; RL = 500 CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total switching outputs; (CL × VCC2 × fo) = sum of the outputs. 2. The condition is VI = GND to VCC. input capacitance power dissipation capacitance per buffer VCC = 3.3 V; notes 1 and 2 DESCRIPTION
74LVC1G32
The 74LVC1G32 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Input can be driven from either 3.3 or 5 V devices. This feature allow the use of these devices in a mixed 3.3 and 5 V environment. Schmitt-trigger action at all inputs makes the circuit tolerant for slower input rise and fall time. This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74LVC1G32 provides the single 2-input OR function.
TYPICAL 3.1 2.1 2.5 2.1 1.7 5 16 ns ns ns ns ns
UNIT
pF pF
2002 Nov 15
2
Philips Semiconductors
Product specification
Single 2-input OR gate
FUNCTION TABLE See note 1. INPUT A L L H H Note 1. H = HIGH voltage level; L = LOW voltage level. ORDERING INFORMATION PACKAGE TYPE NUMBER 74LVC1G32GW 74LVC1G32GV PINNING PIN 1 2 3 4 5 B A GND Y VCC SYMBOL data input B data input A ground (0 V) data output Y supply voltage DESCRIPTION TEMPERATURE RANGE -40 to +125 °C -40 to +125 °C PINS 5 5 PACKAGE SC-88A SC-74A MATERIAL plastic plastic B L H L H
74LVC1G32
OUTPUT Y L H H H
CODE SOT353 SOT753
MARKING VG V32
handbook, halfpage
B1 A2 GND 3
MNA163
5 VCC
handbook, halfpage
1 2
B A
32
4 Y
Y
4
MNA164
Fig.1 Pin configuration.
Fig.2 Logic symbol.
2002 Nov 15
3
Philips Semiconductors
Product specification
Single 2-input OR gate
74LVC1G32
handbook, halfpage
1 2
handbook, halfpage
1
B
4 Y
MNA165
A
MNA166
Fig.3 IEE/IEC logic symbol.
Fig.4 Logic diagram.
RECOMMENDED OPERATING CONDITIONS SYMBOL VCC VI VO Tamb tr, tf PARAMETER supply voltage input voltage output voltage operating ambient temperature input rise and fall times VCC = 1.65 to 2.7 V VCC = 2.7 to 5.5 V active mode VCC = 0 V; Power-down mode CONDITIONS 0 0 0 -40 0 0 MIN. 1.65 MAX. 5.5 5.5 VCC 5.5 +125 20 10 V V V V °C ns/V ns/V UNIT
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC IIK VI IOK VO IO ICC, IGND Tstg PD Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation. PARAMETER supply voltage input diode current input voltage output diode current output voltage output diode current VCC or GND current storage temperature power dissipation per package for temperature range from -40 to +125 °C VI VCC or VO < 0 active mode; notes 1 and 2 VO = 0 to VCC CONDITIONS - -0.5 - -0.5 - - -65 - MIN. -0.5 MAX. +6.5 -50 +6.5 ±50 +6.5 ±50 ±100 +150 250 V mA V mA V mA mA °C mW UNIT
VCC + 0.5 V
Power-down mode; notes 1 and 2 -0.5
2002 Nov 15
4
Philips Semiconductors
Product specification
Single 2-input OR gate
DC CHARACTERISTICS At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = -40 to +85 °C VIH HIGH-level input voltage 1.65 to 1.95 0.65 × VCC - 2.3 to 2.7 2.7 to 3.6 4.5 to 5.5 VIL LOW-level input voltage 2.3 to 2.7 2.7 to 3.6 4.5 to 5.5 VOL LOW-level output voltage VI = VIH or VIL IO = 100 µA IO = 4 mA IO = 8 mA IO = 12 mA IO = 24 mA IO = 32 mA VOH HIGH-level output voltage VI = VIH or VIL IO = -100 µA IO = -4 mA IO = -8 mA IO = -12 mA IO = -24 mA IO = -32 mA ILI Ioff ICC ICC input leakage current power OFF leakage current quiescent supply current additional quiescent supply current per pin VI or VO = 5.5 V VI = VCC or GND; IO = 0 VI = VCC - 0.6 V; IO = 0 1.65 to 5.5 1.65 2.3 2.7 3.0 4.5 0 5.5 2.3 to 5.5 VCC - 0.1 1.2 1.9 2.2 2.3 3.8 - - - - - - - - - - ±0.1 ±0.1 0.1 5 1.65 to 5.5 1.65 2.3 2.7 3.0 4.5 - - - - - - - - - - - - 1.7 2.0 0.7 × VCC - - - - - - - - - - VCC (V) MIN. TYP.(1)
74LVC1G32
MAX.
UNIT
- - - - 0.7 0.8 0.3 × VCC 0.1 0.45 0.3 0.4 0.55 0.55 - - - - - - ±5 ±10 10 500
V V V V V V V V V V V V V V V V V V V µA µA µA µA
1.65 to 1.95 -
0.35 × VCC V
VI = 5.5 V or GND 5.5
2002 Nov 15
5
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