|
Details, datasheet, quote on part number:74LVC1G384
| |
| Part: | 74LVC1G384 |
| Category: | Logic => Switches |
| Description: | Bilateral Switch<<<>>>the 74LVC1G384 is a High-speed Si-gate CMOS Device. <<<>>><<<>>>The 74LVC1G384 Provides an Analog Switch. The Switch Has Input And Output Terminals (pins Y And Z) And an Active Low Enable Input (pin E). When Pin e is High, The Analog Switch is Turned Off. <<<>>><<<>>> <<<>>> Features Very Low ON-resistance: <<<>>>7.5 Ohm (typ) at VCC = 2.7 V <<<>>>6.5 Ohm (typ) at VCC = 3.3 V <<<>>>6.0 Ohm (typ) at VCC =5 V. <<<>>>ESD Protection: <<<>>>HBM EIA/JESD22-A114-A Exceeds 2 000 V <<<>>>MM EIA/JESD22-A115-A Exceeds 200 V. <<<>>>High Noise Immunity <<<>>>CMOS Low Power Consumption <<<>>>Direct Interface Ttl-levels <<<>>>Latch-up Performance Meets Requirements of JESD78 Class i <<<>>>Multiple Package Options <<<>>>Specified From -40 Cel to +80 Cel And -40 Cel to +125 Cel. |
| Company: | Philips Semiconductors |
| Datasheet: | Download 74LVC1G384 datasheet File size : 116 kB |
| Request For quote: | Find where to buy 74LVC1G384
|
| |
Datasheet text preview:
Philips Semiconductors
74LVC1G384
Bilateral switch
74LVC1G384
Bilateral switch
Rev. 01 -- 26 February 2004 Product data sheet
1. General description
The 74LVC1G384 is a high-speed Si-gate CMOS device. The 74LVC1G384 provides an analog switch. The switch has input and output terminals (pins Y and Z) and an active LOW enable input (pin E). When pin E is HIGH, the analog switch is turned off.
2. Features
s Ver y low ON-resistance: x 7.5 (typ) at VCC = 2.7 V x 6.5 (typ) at VCC = 3.3 V x 6.0 (typ) at VCC = 5 V. s ESD protection: x HBM EIA/JESD22-A114-A exceeds 2 000 V x MM EIA/JESD22-A115-A exceeds 200 V. s High noise immunity s CMOS low power consumption s Direct interface TTL-levels s Latch-up performance meets requirements of JESD78 Class I s Multiple package options s Specified from -40 °C to +80 °C and -40 °C to +125 °C.
3. Quick reference data
Table 1: Quick reference data Ground = 0 V; Tamb = 25 °C; tr = tf 3.0 ns. Symbol tPZH, tPZL Parameter turn-on time E to Y or Z Conditions CL = 50 pF; RL = 500 VCC = 3.3 V VCC = 5.0 V tPHZ, tPLZ turn-off time E to Y or Z CL = 50 pF; RL = 500 VCC = 3.3 V VCC = 5.0 V CI input capacitance 5.4 3.6 2 ns ns pF 4.8 3.3 ns ns Min Typ Max Unit
9397 750 12675
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 -- 26 February 2004
1 of 22
Philips Semiconductors
74LVC1G384
Bilateral switch
Table 1: Quick reference data ...continued Ground = 0 V; Tamb = 25 °C; tr = tf 3.0 ns. Symbol CPD CS Parameter power dissipation capacitance switch capacitance Conditions CL = 50 pF; fi = 10 MHz; VCC = 3.3 V OFF-state ON-state
[1] CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + (CL + CS)× VCC2 × fo where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; CS = maximum switch capacitance in pF; VCC = supply voltage in V. The condition is VI = GND to VCC.
[1] [2]
Min -
Typ 15.2 5 9.5
Max -
Unit pF pF pF
[2]
4. Ordering information
Table 2: Ordering information Package Temperature range Name 74LVC1G384GW -40 °C to +125 °C 74LVC1G384GV -40 °C to +125 °C Description plastic surface mounted package; 5 leads plastic surface mounted package; 5 leads Version SOT353 SOT753 Type number
5. Marking
Table 3: Marking Marking code YL YL Type number 74LVC1G384GW 74LVC1G384GV
6. Functional diagram
Y
Z
1 4#
1 1 X1
001aaa373
2
E
001aaa374
Fig 1. Logic symbol.
Fig 2. IEC logic symbol.
9397 750 12675
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 -- 26 February 2004
2 of 22
Philips Semiconductors
74LVC1G384
Bilateral switch
Z
Y E VCC
001aaa372
Fig 3. Logic diagram.
7. Pinning information
7.1 Pinning
Y1 Z2 GND 3
001aaa365
5 VCC
384
4 E
Fig 4. Pin configuration.
7.2 Pin description
Table 4: Pin 1 2 3 4 5 Pin description Symbol Y Z GND E VCC Description independent input or output independent output or input ground (0 V) enable input (active LOW) supply voltage
8. Functional description
8.1 Function table
Table 5: Input E L H
[1] H = HIGH voltage level; L = LOW voltage level.
Function table [1] Switch ON-state OFF-state
9397 750 12675
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 -- 26 February 2004
3 of 22
Philips Semiconductors
74LVC1G384
Bilateral switch
9. Limiting values
Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol VCC VI IIK ISK VS IS ICC, IGND Tstg Ptot
[1]
Parameter supply voltage input voltage input diode current switch diode current DC switch voltage range DC switch source or sink current VCC or GND current storage temperature power dissipation
Conditions
[1]
Min -0.5 -0.5 -0.5 -65
Max +6.5 +6.5 -50 ±50
Unit V V mA mA
VI VCC + 0.5 V VI VCC + 0.5 V enable and disable mode VS > -0.5 V or VS < VCC + 0.5 V
VCC + 0.5 V ±50 ±100 +150 250 mA mA °C mW
Tamb = -40 ° C to +125 °C
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
10. Recommended operating conditions
Table 7: Symbol VCC VI VS Tamb tr, tf Recommended operating conditions Parameter supply voltage input voltage DC switch voltage range ambient temperature input rise and fall times VCC = 1.65 V to 2.7 V VCC = 2.7 V to 5.5 V
[1]
[1]
Conditions
Min 1.65 0 0 -40 0 0
Typ -
Max 5.5 5.5 VCC +125 20 10
Unit V V V °C ns/V ns/V
To avoid drawing VCC current out of terminal Z, when switch current flows in terminal Y, the voltage drop across the bidirectional switch must not exceed 0.4 V. If the switch current flows into terminal Z, no VCC current will flow out of terminal Y. In this case there is no limit for the voltage drop across the switch.
9397 750 12675
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 -- 26 February 2004
4 of 22
Philips Semiconductors
74LVC1G384
Bilateral switch
11. Static characteristics
Table 8: Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol VIH Parameter °C [1] VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 2.7 V to 3.6 V VCC = 4.5 V to 5.5 V VIL LOW-level input voltage VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 2.7 V to 3.6 V VCC = 4.5 V to 5.5 V ILI IS(OFF) IS(ON) ICC ICC input leakage current on control pin analog switch OFF-state current analog switch ON-state current quiescent supply current additional quiescent supply current per control pin input capacitance switch ON-state resistance (peak) VI = GND to VCC; see Figure 7 and Figure 8 IS = 4 mA; VCC = 1.65 V to 1.95 V IS = 8 mA; VCC = 2.3 V to 2.7 V IS = 12 mA; VCC = 2.7 V IS = 24 mA; VCC = 3.0 V to 3.6 V IS = 32 mA; VCC = 4.5 V to 5.5 V RON(rail) switch ON-state resistance rail VI = GND IS = 4 mA; VCC = 1.65 V to 1.95 V IS = 8 mA; VCC = 2.3 V to 2.7 V IS = 12 mA; VCC = 2.7 V IS = 24 mA; VCC = 3.0 V to 3.6 V IS = 32 mA; VCC = 4.5 V to 5.5 V VI = VCC IS = 4 mA; VCC = 1.65 V to 1.95 V IS = 8 mA; VCC = 2.3 V to 2.7 V IS = 12 mA; VCC = 2.7 V IS = 24 mA; VCC = 3.0 V to 3.6 V IS = 32 mA; VCC = 4.5 V to 5.5 V
9397 750 12675
Conditions
Min 0.65 × VCC 1.7 2.0 0.7 × VCC [2]
Typ ±0.1 ±0.1 ±0.1 0.1 5
Max 0.35 × VCC 0.7 0.8 0.3 × VCC ±5 ±5 ±5 10 500
Unit V V V V V V V V µA µA µA µA µA
Tamb = -40 °C to +85
HIGH-level input voltage
VI = 5.5 V or GND; VCC = 5.5 V VI = VIH or VIL; |VS| = VCC - GND; VCC = 5.5 V; see Figure 5 VI = VIH or VIL; |VS| = VCC - GND; VCC = 5.5 V; see Figure 6 VI = VCC or GND; VS = GND or VCC; IO = 0 A; VCC = 5.5 V VI = VCC - 0.6 V; VS = GND or VCC; IO = 0 A; VCC = 5.5 V
-
[2]
[2]
[2]
[2]
CI RON(peak)
-
2
-
pF
-
35 14 11.5 8.5 6.5 10 8.5 7.5 6.5 6 12 8.5 7.5 6.5 6
130 30 25 20 15 30 20 18 15 10 30 20 18 15 10
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 -- 26 February 2004
5 of 22
|
|
