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Part: 74LVC1G86GV
Category:
Logic
-> Gates
-> XOR (Exclusive OR) Gates
Description: 74LVC1G86; 2-input Exclusive-OR GATE;; Package: SOT353 (UMT5), SOT753
Company: Philips Semiconductors
Datasheet: Download 74LVC1G86GV datasheet File size : 132 kB
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INTEGRATED CIRCUITS
DATA SHEET
74LVC1G86 2-input EXCLUSIVE-OR gate
Product specification Supersedes data of 2001 Apr 06 2002 Nov 15
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
FEATURES · Wide supply voltage range from 1.65 to 5.5 V · High noise immunity · Complies with JEDEC standard: JESD8-7 (1.65 to 1.95 V) JESD8-5 (2.3 to 2.7 V) JESD8B/JESD36 (2.7 to 3.6 V). · ±24 mA output drive (VCC = 3.0 V) · CMOS low power consumption · Latch-up performance exceeds 250 mA · Direct interface with TTL levels · Inputs accept voltages up to 5 V · Multiple package options · ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. · Specified from -40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf 2.5 ns. SYMBOL tPHL/tPLH PARAMETER propagation delay inputs A and B to output Y CONDITIONS VCC = 1.8 V; CL = 30 pF; RL = 1 k VCC = 2.5 V; CL = 30 pF; RL = 500 VCC = 2.7 V; CL = 50 pF; RL = 500 VCC = 3.3 V; CL = 50 pF; RL = 500 VCC = 5.0 V; CL = 50 pF; RL = 500 CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total switching outputs; (CL × VCC2 × fo) = sum of the outputs. 2. The condition is VI = GND to VCC. input capacitance power dissipation capacitance per buffer VCC = 3.3 V; notes 1 and 2 DESCRIPTION
74LVC1G86
The 74LVC1G86 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 or 5 V devices. These features allow the use of these devices in a mixed 3.3 and 5 V environment. This device is fully specified for partial Power-down applications using Ioff. The Ioff circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74LVC1G86 provides the 2-input EXCLUSIVE-OR function.
TYPICAL 3.7 2.5 2.8 2.3 1.9 5 25 ns ns ns ns ns pF pF
UNIT
2002 Nov 15
2
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
FUNCTION TABLE See note 1. INPUT A L L H H Note 1. H = HIGH voltage level; L = LOW voltage level. ORDERING INFORMATION PACKAGE TYPE NUMBER 74LVC1G86GW 74LVC1G86GV PINNING PIN 1 2 3 4 5 B A GND Y VCC SYMBOL data input B data input A ground (0 V) data output Y supply voltage DESCRIPTION TEMPERATURE RANGE -40 to +125 °C -40 to +125 °C PINS 5 5 PACKAGE SC-88A SC-74A MATERIAL plastic plastic B L H L H
74LVC1G86
OUTPUT Y L H H L
CODE SOT353 SOT753
MARKING VH V86
2002 Nov 15
3
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
74LVC1G86
handbook, halfpage
B1 A2 GND 3
MNA037
5 VCC
handbook, halfpage
86
4 Y
1 2
B A
Y
4
MNA038
Fig.1 Pin configuration.
Fig.2 Logic symbol.
handbook, halfpage
B
handbook, halfpage
1 2
=1
MNA039
4
Y A
MNA040
Fig.3 IEE/IEC logic symbol.
Fig.4 Logic diagram.
2002 Nov 15
4
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
RECOMMENDED OPERATING CONDITIONS SYMBOL VCC VI VO Tamb tr, tf PARAMETER supply voltage input voltage output voltage operating ambient temperature input rise and fall times VCC = 1.65 to 2.7 V VCC = 2.7 to 5.5 V active mode VCC = 0 V; Power-down mode CONDITIONS 0 0 0 -40 0 0 MIN. 1.65
74LVC1G86
MAX. 5.5 5.5 VCC 5.5 +125 20 10 V V V V
UNIT
°C ns/V ns/V
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC IIK VI IOK VO IO ICC, IGND Tstg PD Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation. PARAMETER supply voltage input diode current input voltage output diode current output voltage output source or sink current VCC or GND current storage temperature power dissipation per package for temperature range from -40 to +125 °C VI VCC or VO < 0 active mode; notes 1 and 2 VO = 0 to VCC CONDITIONS - -0.5 - -0.5 - - -65 - MIN. -0.5 MAX. +6.5 -50 +6.5 ±50 +6.5 ±50 ±100 +150 250 V mA V mA V mA mA °C mW UNIT
VCC + 0.5 V
Power-down mode; notes 1 and 2 -0.5
2002 Nov 15
5
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