Details, datasheet, quote on part number: BA482
CategoryDiscrete => Diodes & Rectifiers => Protection
DescriptionBand-switching Diode
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BA482 datasheet
Cross ref.Similar parts: BA592
Find where to buy


Features, Applications

FEATURES Continuous reverse voltage: max. 35 V Continuous forward current: max. 100 mA Low diode capacitance: max. to 1.6 pF Low diode forward resistance: max. to 1.2.

DESCRIPTION Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO-34) package.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER MIN. MAX. mA C UNIT

ELECTRICAL CHARACTERISTICS 25 C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see 20 V; Tamb C Cd diode capacitance BA484 rD diode forward resistance = 3 mA; = 200 MHz; see to 100 MHz; 3 V; see nA A CONDITIONS = 100 mA; see Fig.2 TYP. - MAX. 1.2 V UNIT

THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted a FR4 printed-circuit board without metallization pad. GRAPHICAL DATA

PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient
CONDITIONS lead length 10 mm lead length 10 mm; note 1
= 75 C; typical values. = 25 C; typical values. = 25 C; maximum values.
20 V. Solid line: maximum values. Dotted line: typical values.


Related products with the same datasheet
Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
BA483 Band-switching Diode
BA591 BA591; Band-switching Diode;; Package: SOD323 (UMD2, I-IEIA, URP)
BA592 Band-switching Diode
BA792 BA792; Band-switching Diode;; Package: SOD110
BA891 BA891; Band-switching Diode;; Package: SOD523 (I-IGIA, UFP)
BA892 Band-switching Diode
BAL74 BAL74; High-speed Diode;; Package: SOT23 (SST3)
BAL74W BAL74W; High-speed Diode;; Package: SOT323 (UMT3, CMPAK)
BAL99 BAL99; High-speed Diode;; Package: SOT23 (SST3)
BAL99W BAL99W; High-speed Diode;; Package: SOT323 (UMT3, CMPAK)
BAP1321-01 74LVT126; 3.3V Quad Buffer (3-State)
BAP1321-02 BAP1321-02; Silicon Pin Diode
BAP1321-03 74LVT126; 3.3V Quad Buffer (3-State)
BAP1321-04 BAP1321-04; Silicon Pin Diode
BAP142L Silicon Pin Diode <<<>>>Planar Pin Diode in a SOD882 Ultra Small SMD Plastic Package. <<<>>><<<>>> <<<>>> Features High Voltage, Current Controlled RF Resistor <<<>>>Low Losses at Very Low Currents <<<>>>Low
BAP50-02 BAP50-02; General Purpose Pin Diode
BAP50-03 74LVT126; 3.3V Quad Buffer (3-State)
BAP50-04 BAP50-04; General Purpose Pin Diode

74LV04N : 74LV04; Hex Inverter;; Package: SOT108-1 (SO14), SOT27-1 (DIP14), SOT337-1 (SSOP14), SOT402-1 (TSSOP14)

BLW77 : Power BLW77; Hf/vhf Power Transistor

BT137BSERIESE : Triacs Sensitive Gate

BZV55-F4V3 : BZV55 Series; Voltage Regulator Diodes

MAX8877-XXD : MAX8877/MAX8878-XX; Very Low Noise, Very Low Dropout, 150 ma Linear Regulator, CMOS Process Technology

PBSS4350SA : 50 V Low V

PCF85116-3T/01 : PCF1179C; 4-digit Duplex LCD Car Clock;; Package: SOT136-1 (SO28)

SE5537FE : Sample-and-hold Amplifier

TDA5330T : VHF, UHF And Hyperband Mixer/oscillator For TV And VCR 3-band Tuners

TDA6651ATT : 5 V mixer/oscillator and low noise PLL synthesizer for hybrid terrestrial tuner (digital and analog) The TDA6650ATT; TDA6651ATT is a programmable 3-band mixer / oscillator and low phase noise PLL synthesizer intended for pure 3-band tuner concepts applied to hybrid (digital and analog) terrestri

TJF1051T/3 : High-speed CAN Transceiver The TJF1051 is a high-speed CAN transceiver that provides an interface between a Controller Area Network (CAN) protocol controller and the physical two-wire CAN bus. The transceiver is designed for high-speed (up to 1 Mbit/s) CAN industrial applications, providing differe

Same catergory

2N4058 : . 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 .

APT6017LLL : 600V, 35A Power MOS 7 Transistor. Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal.

DMA12 : Transient Voltage Suppressor. From Load Switching In AC Applications Protects For 120Vac, and 440Vac Circuits Fits Terminal240Vac Spacing on Most IGBTs Fast Clamping Subnanosecond These devices will protect your IGBT in applications where it is used in overload protection or switching ac loads. Transient voltages produced when switching occurs in the positive one-half of the cycle.

FS50KMJ-2 : for General Switching. Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory.

P83C748EBAA : 80c51 8-bit Microcontroller Family 2k/64 Otp/rom, Low Pin Count. Preliminary Supersedes data of 1998 Apr 23 IC20 Data Handbook 1999 Apr 15 The Philips 83C748/87C748 offers the advantages of the 80C51 architecture in a small package and at low cost. The 8XC748 Microcontroller is fabricated with Philips high-density CMOS technology. Philips epitaxial substrate minimizes CMOS latch-up sensitivity. The 8XC748 contains.

PHC20306 : PHC20306; Complementary Enhancement Mode MOS Transistor. Objective File under Discrete Semiconductors, SC13b 1998 Feb 18 Very low on-state resistance High-speed switching No secondary breakdown. APPLICATIONS Motor and actuator driver Power management Synchronized rectification. One N-channel and one P-channel enhancement mode MOS transistor SOT96-1 (SO8) plastic package. CAUTION The device is supplied in an antistatic.

PHP24N03T : Trenchmos(tm) Transistor Standard Level Fet: 30v, 24a. N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device very low on-state resistance and has integral zener diodes giving ESD protection It is intended for use in DC-DC converters and general purpose switching applications. SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source.

STN4NE03 : Low Voltage. N-channel 30V - 0.045 Ohm - 4A - SOT-223 StripFET Power MOSFET.

BLF4G10-160 : UHF power LDMOS transistor 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

FHBCP52 : 1.2 A, 60 V, PNP, Si, POWER TRANSISTOR. s: Polarity: PNP ; Package Type: SOT223, SOT-223, 4 PIN.

FML12N50ES : 12 A, 500 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 0.5000 ohms ; PD: 1440 milliwatts ; Package Type: TFP, 4 PIN ; Number of units in IC: 1.

IRF640AJ69Z : 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.1800 ohms ; Package Type: TO-220, TO-220, 3 PIN ; Number of units in IC: 1.

KTK5132V : 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 7 ohms ; PD: 100 milliwatts ; Package Type: VSM, 3 PIN ; Number of units in IC: 1.

NTD410 : 5 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-66. s: Polarity: NPN. On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, is a valid Renesas Electronics document. We appreciate your understanding. Issued by: Renesas Electronics Corporation.

PH5415 : 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92. s: Polarity: PNP.


RN55C1153F : RESISTOR, METAL FILM, 0.1 W, 1 %, 50 ppm, 115000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Resistance Range: 115000 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 50 ±ppm/°C ; Power Rating: 0.1000 watts (1.34E-4 HP) ; Operating.

RNCP0402 : RESISTOR, THIN FILM, 0.1 W, 1; 5 %, 100 ppm, 1 ohm - 10000 ohm, SURFACE MOUNT, 0402. s: Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0402, CHIP, ROHS COMPLIANT ; Operating DC Voltage: 50 volts ; Operating Temperature: -55 to 155 C (-67 to 311 F).

T2618S : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer.

520A : RESISTOR, WIRE WOUND, 2 W, 0.005; 0.01; 0.02; 0.05; 0.1; 0.5; 1 %, 10 ppm, 0.1 ohm - 43000000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Operating DC Voltage: 1200 volts ; Operating Temperature: -60 to 145 C (-76 to 293 F).

0-C     D-L     M-R     S-Z