|Category||Discrete => Diodes & Rectifiers => Protection|
|Company||Philips Semiconductors (Acquired by NXP)|
|Datasheet||Download BA482 datasheet
|Cross ref.||Similar parts: BA592|
FEATURES Continuous reverse voltage: max. 35 V Continuous forward current: max. 100 mA Low diode capacitance: max. to 1.6 pF Low diode forward resistance: max. to 1.2.
DESCRIPTION Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO-34) package.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER MIN. MAX. mA °C UNIT
ELECTRICAL CHARACTERISTICS 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see 20 V; Tamb °C Cd diode capacitance BA484 rD diode forward resistance = 3 mA; = 200 MHz; see to 100 MHz; 3 V; see nA µA CONDITIONS = 100 mA; see Fig.2 TYP. - MAX. 1.2 V UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted a FR4 printed-circuit board without metallization pad. GRAPHICAL DATAPARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient
CONDITIONS lead length 10 mm lead length 10 mm; note 1
= 75 °C; typical values. = 25 °C; typical values. = 25 °C; maximum values.
20 V. Solid line: maximum values. Dotted line: typical values.
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