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Part: BAP1321-02

Category:
 Discrete
   -> Diodes & Rectifiers
     -> PIN Diodes

Description: BAP1321-02; Silicon Pin Diode

Company: Philips Semiconductors

Datasheet: Download BAP1321-02 datasheet     File size : 34 kB

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Datasheet text preview:
DISCRETE SEMICONDUCTORS

DATA SHEET

M3D319

BAP1321-02 Silicon PIN diode
Product specification 2001 Apr 17

Philips Semiconductors

Product specification

Silicon PIN diode
FEATURES · High voltage, current controlled · RF resistor for RF attenuators and switches · Low diode capacitance · Low diode forward resistance · Very low series inductance · For applications up to 3 GHz.
handbook, halfpage

BAP1321-02
PINNING PIN DESCRIPTION cathode anode

APPLICATIONS · RF attenuators and switches. DESCRIPTION Planar PIN diode in a SOD523 ultra small SMD plastic package.

Marking code: K7.

Fig.1 Simplified outline (SOD523) and symbol.


2
1 2 Top view

1

MAM405

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF Ptot Tstg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts 90 °C CONDITIONS MIN. - - - -65 -65 MAX. 60 100 715 +150 +150 UNIT V mA mW °C °C

2001 Apr 17

2

Philips Semiconductors

Product specification

Silicon PIN diode
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR Cd PARAMETER forward voltage reverse leakage current diode capacitance IF = 50 mA VR = 60 V VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 20 V; f = 1 MHz rD diode forward resistance f = 100 MHz; note 1 IF = 0.5 mA IF = 1 mA IF = 10 mA IF = 100 mA |s21|2 isolation VR = 0; f = 900 MHz VR = 0; f = 1800 MHz VR = 0; f = 2450 MHz |s21|2 inser tion loss IF = 0.5 mA; f = 900 MHz IF = 0.5 mA; f = 1800 MHz IF = 0.5 mA; f = 2450 MHz |s21|2 inser tion loss IF = 1 mA; f = 900 MHz IF = 1 mA; f = 1800 MHz IF = 1 mA; f = 2450 MHz |s21|2 inser tion loss IF = 10 mA; f = 900 MHz IF = 10 mA; f = 1800 MHz IF = 10 mA; f = 2450 MHz |s21|2 inser tion loss IF = 100 mA; f = 900 MHz IF = 100 mA; f = 1800 MHz IF = 100 mA; f = 2450 MHz L LS Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point charge carrier life time series inductance when switched from IF = 10 mA to IR = 6 mA; RL = 100 ; measured at IR = 3 mA IF = 100 mA; f = 100 MHz CONDITIONS

BAP1321-02

TYP. 0.95 - 0.4 0.35 0.25 3.4 2.4 1.2 0.85 16.3 11.4 9.2 0.23 0.27 0.33 0.18 0.22 0.27 0.10 0.16 0.20 0.08 0.13 0.18 0.5 0.6

MAX. 1.1 100 - 0.45 0.32 5.0 3.6 1.8 1.3 - - - - - - - - - - - - - - - - -

UNIT V nA pF pF pF dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB µs nH

VALUE 85

UNIT K/W

2001 Apr 17

3

Philips Semiconductors

Product specification

Silicon PIN diode
GRAPHICAL DATA

BAP1321-02

handbook, halfpage

10

MLD591

handbook, halfpage

rD ()

500 Cd

MLD592

(fF) 400

300 1 200

100

10-1 10-1

1

10

IF (mA)

102

0 0 4 8 12 16 VR (V) f = 1 MHz; Tj = 25 °C. 20

f = 100 MHz; Tj = 25 °C.

Fig.2

Forward resistance as a function of forward current; typical values.

Fig.3

Diode capacitance as a function of reverse voltage; typical values.

handbook, halfpage s2

0

MLD595

21

handbook, halfpage s2
(1) (2) (3)

0

MLD594

(dB)

21

-0.1

(dB)

-10

-0.2
(4)

-20

-0.3 -30

-0.4

-0.5

0

1 (3) IF = 1 mA.

2

f (GHz)

3

-40

0

1

2

f (GHz)

3

(1) IF = 100 mA. (2) IF = 10 mA.

(4) IF = 0.5 mA. Diode zero biased and inserted in series with a 50 stripline circuit. Tamb = 25 °C.

Diode inserted in series with a 50 stripline circuit and biased via the analyzer Tee network. Tamb = 25 °C.

Fig.4

Insertion loss of the diode as a function of frequency; typical values.

(|s21|2)

Fig.5

Isolation (|s21|2) of the diode as a function of frequency; typical values.

2001 Apr 17

4

Philips Semiconductors

Product specification

Silicon PIN diode
PACKAGE OUTLINE Plastic surface mounted package; 2 leads

BAP1321-02

SOD523

A c HE vMA

D

A

0

0.5 scale

1 mm

1 E bp

2

DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. The marking bar indicates the cathode. A 0.7 0.5 bp 0.35 0.25 c 0.2 0.1 D 1.3 1.1 E 0.9 0.7 HE 1.7 1.5 v 0.15

(1)

OUTLINE VERSION SOD523

REFERENCES IEC JEDEC EIAJ SC-79

EUROPEAN PROJECTION

ISSUE DATE 98-11-25

2001 Apr 17

5




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